GB1332348A - Silicon carbide junction diode - Google Patents
Silicon carbide junction diodeInfo
- Publication number
- GB1332348A GB1332348A GB5506670A GB1332348DA GB1332348A GB 1332348 A GB1332348 A GB 1332348A GB 5506670 A GB5506670 A GB 5506670A GB 1332348D A GB1332348D A GB 1332348DA GB 1332348 A GB1332348 A GB 1332348A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- silicon carbide
- layer
- crystal
- carbon surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 10
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 11
- 229910052710 silicon Inorganic materials 0.000 abstract 11
- 239000010703 silicon Substances 0.000 abstract 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 7
- 229910052799 carbon Inorganic materials 0.000 abstract 7
- 239000013078 crystal Substances 0.000 abstract 7
- 239000012535 impurity Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1332348 Epitaxial growth of silicon carbide NATIONAL RESEARCH CORP 19 Nov 1970 [3 May 1970] 55066/70 Heading C1A [Also in Divisions C4 and H1] An epitaxial layer of silicon carbide is grown on a silicon carbide crystal by placing the latter on a carbon surface wetted with silicon or on a carbon surface which is then wetted with silicon, the silicon in either case existing as a molten layer in contact with the crystal and the carbon surface and providing a temperature gradient less than 10‹ C./inch in a reaction zone constituted by the silicon carbide crystal, the carbon surface and the silicon layer, the reaction zone being maintained at a sufficiently elevated temperature (2200‹ C. to 2600‹ C.) that carbon from said carbon surface dissolves in the silicon layer and is epitaxially deposited as silicon carbide on a surface of said crystal. Preferably the elevated temperature is maintained until there is no free silicon in the reaction zone. The silicon in the molten layer may contain boron as a P-type impurity and may contain aluminium in a concentration higher than the boron concentration. The method may be modified by providing a first mass of silicon having one impurity concentration between the carbon surface and the silicon carbide crystal and growing an epitaxial layer of silicon carbide on the silicon carbide crystal at a temperature of 1500‹ to 1700‹ C. to form a two-layer silicon carbide crystal on which is grown (by the method above) an epitaxial layer from a second mass of silicon which is in a more remote portion of the reaction zone than the first mass of silicon and has a different impurity concentration from the first mass of silicon.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5506670 | 1970-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1332348A true GB1332348A (en) | 1973-10-03 |
Family
ID=10472848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5506670A Expired GB1332348A (en) | 1970-11-19 | 1970-11-19 | Silicon carbide junction diode |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1332348A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587928A (en) * | 1975-12-24 | 1986-05-13 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for producing a semiconductor device |
| FR2786208A1 (en) * | 1998-11-25 | 2000-05-26 | Centre Nat Rech Scient | Crystal growth from a melt, especially for growing large silicon carbide or aluminum nitride crystals useful for large power electronic components, comprises lateral growth from grown crystal tips of the material on a substrate |
-
1970
- 1970-11-19 GB GB5506670A patent/GB1332348A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587928A (en) * | 1975-12-24 | 1986-05-13 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for producing a semiconductor device |
| FR2786208A1 (en) * | 1998-11-25 | 2000-05-26 | Centre Nat Rech Scient | Crystal growth from a melt, especially for growing large silicon carbide or aluminum nitride crystals useful for large power electronic components, comprises lateral growth from grown crystal tips of the material on a substrate |
| US6402836B1 (en) | 1998-11-25 | 2002-06-11 | Cnrs (Centre National De La Recherche Scientifique) | Method for epitaxial growth on a substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |