GB1202113A - Improvements in or relating to the manufacture of monocrystals of semiconductor compounds - Google Patents

Improvements in or relating to the manufacture of monocrystals of semiconductor compounds

Info

Publication number
GB1202113A
GB1202113A GB39063/68A GB3906368A GB1202113A GB 1202113 A GB1202113 A GB 1202113A GB 39063/68 A GB39063/68 A GB 39063/68A GB 3906368 A GB3906368 A GB 3906368A GB 1202113 A GB1202113 A GB 1202113A
Authority
GB
United Kingdom
Prior art keywords
seed
monocrystals
relating
manufacture
boric oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39063/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1202113A publication Critical patent/GB1202113A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,202,113. Crystal-pulling. SIEMENS A.G. 15 Aug., 1968 [16 Aug., 1967], No. 39063/68. Heading B1S. In the pulling of a monocrystalline rod of gallium arsenide on a seed from a melt having a thin surface layer of boric oxide, the seed is pre-coated with a film of boric oxide having a thickness of 250-500Á. The seed may be precoated by immersing in a melt of boric oxide at 1,000‹C for at least 5 min., withdrawing at 10cm./hr., and annealing for 5 hr. at 400- 800‹C. The immersion and annealing steps may be effected in an atmosphere of argon. Reference has been directed by the Comptroller to Specification 1,113,069.
GB39063/68A 1967-08-16 1968-08-15 Improvements in or relating to the manufacture of monocrystals of semiconductor compounds Expired GB1202113A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0111369 1967-08-16

Publications (1)

Publication Number Publication Date
GB1202113A true GB1202113A (en) 1970-08-12

Family

ID=7530891

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39063/68A Expired GB1202113A (en) 1967-08-16 1968-08-15 Improvements in or relating to the manufacture of monocrystals of semiconductor compounds

Country Status (4)

Country Link
US (1) US3591347A (en)
FR (1) FR1582612A (en)
GB (1) GB1202113A (en)
NL (1) NL6810036A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU400139A1 (en) * 1971-07-07 1974-02-25 FUND VNOERTSH
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
GB2032895B (en) * 1978-10-25 1983-04-27 Cambridge Analysing Instr Direct synthesis of inter-metallic compounds
US4289570A (en) * 1978-12-13 1981-09-15 United Technologies Corporation Seed and method for epitaxial solidification

Also Published As

Publication number Publication date
NL6810036A (en) 1969-02-18
DE1644015B2 (en) 1975-11-27
US3591347A (en) 1971-07-06
DE1644015A1 (en) 1970-04-09
FR1582612A (en) 1969-10-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee