GB1355852A - Growing semiconductor crystals - Google Patents

Growing semiconductor crystals

Info

Publication number
GB1355852A
GB1355852A GB4414971A GB4414971A GB1355852A GB 1355852 A GB1355852 A GB 1355852A GB 4414971 A GB4414971 A GB 4414971A GB 4414971 A GB4414971 A GB 4414971A GB 1355852 A GB1355852 A GB 1355852A
Authority
GB
United Kingdom
Prior art keywords
seed
solvent
halt
temperature gradient
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4414971A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1355852A publication Critical patent/GB1355852A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/108—Melt back

Abstract

1355852 Crystal growing WESTERN ELECTRIC CO Inc 22 Sept 1971 [29 Sept 1970] 44149/71 Headings B1G and B1S In the growth of a crystalline semi-conductor material by contacting a body of the material with a solvent containing a seed, so that the semi-conductor will dissolve in the solvent and be deposited on the seed there being a temperature gradient across the solvent between the seed and the body, the temperature gradient is reduced to halt the depositiononto the seed and then reapplied to restart the deposition. This method reduces the dislocation density in the subsequently grown material. The temperature gradient may be reversed at the halt to dissolve some of the already deposited material, and there may be more than one halt so as to form layers having successively decreasing dislocation densities. The body and seed may be of gallium phosphide, the solvent being of gallium.
GB4414971A 1970-09-29 1971-09-22 Growing semiconductor crystals Expired GB1355852A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7655070A 1970-09-29 1970-09-29

Publications (1)

Publication Number Publication Date
GB1355852A true GB1355852A (en) 1974-06-05

Family

ID=22132733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4414971A Expired GB1355852A (en) 1970-09-29 1971-09-22 Growing semiconductor crystals

Country Status (8)

Country Link
US (1) US3729348A (en)
JP (1) JPS505026B1 (en)
BE (1) BE772812A (en)
CA (1) CA947186A (en)
DE (1) DE2147265B2 (en)
FR (1) FR2106326A5 (en)
GB (1) GB1355852A (en)
IT (1) IT939894B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
JPS5137915B2 (en) * 1973-10-19 1976-10-19
US4246050A (en) * 1979-07-23 1981-01-20 Varian Associates, Inc. Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US5091333A (en) * 1983-09-12 1992-02-25 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4632712A (en) * 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
FR2606036B1 (en) * 1986-11-05 1988-12-02 Pechiney PROCESS FOR OBTAINING, BY COOLING MOLTEN ALLOYS, CRYSTALS OF INTERMETALLIC COMPOUNDS, IN PARTICULAR, ISOLATED SINGLE CRYSTALS
JPH0787187B2 (en) * 1987-08-13 1995-09-20 古河電気工業株式会社 Method for manufacturing GaAs compound semiconductor substrate
US5228927A (en) * 1988-03-25 1993-07-20 Shin-Etsu Handotai Company Limited Method for heat-treating gallium arsenide monocrystals
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
JPH04198095A (en) * 1990-11-28 1992-07-17 Fujitsu Ltd Method for growing thin film of compound semiconductor
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure

Also Published As

Publication number Publication date
DE2147265B2 (en) 1973-08-23
CA947186A (en) 1974-05-14
FR2106326A5 (en) 1972-04-28
US3729348A (en) 1973-04-24
BE772812A (en) 1972-01-17
JPS505026B1 (en) 1975-02-27
DE2147265A1 (en) 1972-03-30
IT939894B (en) 1973-02-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees