GB1432686A - Method of manufacturing a monocrystalline substrate body - Google Patents

Method of manufacturing a monocrystalline substrate body

Info

Publication number
GB1432686A
GB1432686A GB3302673A GB3302673A GB1432686A GB 1432686 A GB1432686 A GB 1432686A GB 3302673 A GB3302673 A GB 3302673A GB 3302673 A GB3302673 A GB 3302673A GB 1432686 A GB1432686 A GB 1432686A
Authority
GB
United Kingdom
Prior art keywords
melt
layer
plate
substrate material
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3302673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1432686A publication Critical patent/GB1432686A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Abstract

1432686 Depositing epitaxial layers PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 11 July 1973 [14 July 1972] 33026/73 Heading B1S A monocrystalline body consisting of a substrate with an epitaxial layer deposited thereon is made by dissolving a surface layer of a monocrystalline substrate material in a melt which consists of a solution of the components of the substrate material dissolved in a flux and then depositing a monocrystalline layer of the substrate material on the resulting surface from a melt which consists of a solution of the components of the substrate material dissolved in a flux. The dissolution of the surface layer and subsequent depository of the layer may be carried out in the same melt. In example I, a plate of gadolinium gallium garnet was treated with a melt of Gd 2 O 3 , Ga 2 O 3 , PbO, and B 2 O 3 at a temperature above the saturation temperature of the melt, the plate removed from the melt and the thinner plate provided with a layer of the composition by liquid phase epitaxy. In example II, a plate of samarium gallium garnet Sm 3 Ga 5 O 12 , was treated in a melt which had a composition of Sm 2 O 3 , Ga 2 O 3 , PbO and B 2 O 3 at a temperature above the saturation temperature of the melt, after which the melt was cooled to below the saturation temperature of the melt and maintained there for 15 minutes. Upon inspection the plate was found to be 100Ám thinner and to have a layer of 10Ám deposited on each side of the plate.
GB3302673A 1972-07-14 1973-07-11 Method of manufacturing a monocrystalline substrate body Expired GB1432686A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7209744A NL7209744A (en) 1972-07-14 1972-07-14

Publications (1)

Publication Number Publication Date
GB1432686A true GB1432686A (en) 1976-04-22

Family

ID=19816516

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3302673A Expired GB1432686A (en) 1972-07-14 1973-07-11 Method of manufacturing a monocrystalline substrate body

Country Status (8)

Country Link
JP (1) JPS4964576A (en)
CA (1) CA1018439A (en)
DE (1) DE2332036C3 (en)
FR (1) FR2192869B1 (en)
GB (1) GB1432686A (en)
IT (1) IT989842B (en)
NL (1) NL7209744A (en)
SE (1) SE7608675L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2276564A (en) * 1993-03-31 1994-10-05 Max Planck Gesellschaft A liquid-phase heteroepitaxy method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754519A (en) * 1969-08-06 1971-02-08 Motorola Inc METHOD AND APPARATUS FOR THE GROWTH OF EPITAXIAL LAYERS IN LIQUID PHASE ON SEMICONDUCTORS

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2276564A (en) * 1993-03-31 1994-10-05 Max Planck Gesellschaft A liquid-phase heteroepitaxy method
GB2276564B (en) * 1993-03-31 1997-02-05 Max Planck Gesellschaft A liquid-phase heteroepitaxy method

Also Published As

Publication number Publication date
DE2332036A1 (en) 1974-01-31
FR2192869B1 (en) 1977-05-13
DE2332036B2 (en) 1978-09-07
NL7209744A (en) 1974-01-16
FR2192869A1 (en) 1974-02-15
CA1018439A (en) 1977-10-04
IT989842B (en) 1975-06-10
SE7608675L (en) 1976-08-02
DE2332036C3 (en) 1980-07-03
JPS4964576A (en) 1974-06-22

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee