BE772812A - PROCESS FOR GROWTH OF A CRYSTALLINE BODY BY EPITAXIAL DEPOSIT - Google Patents

PROCESS FOR GROWTH OF A CRYSTALLINE BODY BY EPITAXIAL DEPOSIT

Info

Publication number
BE772812A
BE772812A BE772812A BE772812A BE772812A BE 772812 A BE772812 A BE 772812A BE 772812 A BE772812 A BE 772812A BE 772812 A BE772812 A BE 772812A BE 772812 A BE772812 A BE 772812A
Authority
BE
Belgium
Prior art keywords
growth
crystalline body
epitaxial deposit
epitaxial
deposit
Prior art date
Application number
BE772812A
Other languages
French (fr)
Inventor
R H Saul
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE772812A publication Critical patent/BE772812A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/108—Melt back
BE772812A 1970-09-29 1971-09-20 PROCESS FOR GROWTH OF A CRYSTALLINE BODY BY EPITAXIAL DEPOSIT BE772812A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7655070A 1970-09-29 1970-09-29

Publications (1)

Publication Number Publication Date
BE772812A true BE772812A (en) 1972-01-17

Family

ID=22132733

Family Applications (1)

Application Number Title Priority Date Filing Date
BE772812A BE772812A (en) 1970-09-29 1971-09-20 PROCESS FOR GROWTH OF A CRYSTALLINE BODY BY EPITAXIAL DEPOSIT

Country Status (8)

Country Link
US (1) US3729348A (en)
JP (1) JPS505026B1 (en)
BE (1) BE772812A (en)
CA (1) CA947186A (en)
DE (1) DE2147265B2 (en)
FR (1) FR2106326A5 (en)
GB (1) GB1355852A (en)
IT (1) IT939894B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
JPS5137915B2 (en) * 1973-10-19 1976-10-19
US4246050A (en) * 1979-07-23 1981-01-20 Varian Associates, Inc. Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US4632712A (en) * 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US5091333A (en) * 1983-09-12 1992-02-25 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
FR2606036B1 (en) * 1986-11-05 1988-12-02 Pechiney PROCESS FOR OBTAINING, BY COOLING MOLTEN ALLOYS, CRYSTALS OF INTERMETALLIC COMPOUNDS, IN PARTICULAR, ISOLATED SINGLE CRYSTALS
JPH0787187B2 (en) * 1987-08-13 1995-09-20 古河電気工業株式会社 Method for manufacturing GaAs compound semiconductor substrate
US5228927A (en) * 1988-03-25 1993-07-20 Shin-Etsu Handotai Company Limited Method for heat-treating gallium arsenide monocrystals
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
JPH04198095A (en) * 1990-11-28 1992-07-17 Fujitsu Ltd Method for growing thin film of compound semiconductor
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure

Also Published As

Publication number Publication date
JPS505026B1 (en) 1975-02-27
DE2147265A1 (en) 1972-03-30
DE2147265B2 (en) 1973-08-23
CA947186A (en) 1974-05-14
US3729348A (en) 1973-04-24
GB1355852A (en) 1974-06-05
IT939894B (en) 1973-02-10
FR2106326A5 (en) 1972-04-28

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