IT939894B - PROCEDURE FOR THE GROWTH OF SEMICONDUCTOR CRYSTALS BY EPITAXIAL DEPOSITION - Google Patents

PROCEDURE FOR THE GROWTH OF SEMICONDUCTOR CRYSTALS BY EPITAXIAL DEPOSITION

Info

Publication number
IT939894B
IT939894B IT70184/71A IT7018471A IT939894B IT 939894 B IT939894 B IT 939894B IT 70184/71 A IT70184/71 A IT 70184/71A IT 7018471 A IT7018471 A IT 7018471A IT 939894 B IT939894 B IT 939894B
Authority
IT
Italy
Prior art keywords
growth
procedure
epitaxial deposition
semiconductor crystals
crystals
Prior art date
Application number
IT70184/71A
Other languages
Italian (it)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT939894B publication Critical patent/IT939894B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/108—Melt back

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
IT70184/71A 1970-09-29 1971-09-28 PROCEDURE FOR THE GROWTH OF SEMICONDUCTOR CRYSTALS BY EPITAXIAL DEPOSITION IT939894B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7655070A 1970-09-29 1970-09-29

Publications (1)

Publication Number Publication Date
IT939894B true IT939894B (en) 1973-02-10

Family

ID=22132733

Family Applications (1)

Application Number Title Priority Date Filing Date
IT70184/71A IT939894B (en) 1970-09-29 1971-09-28 PROCEDURE FOR THE GROWTH OF SEMICONDUCTOR CRYSTALS BY EPITAXIAL DEPOSITION

Country Status (8)

Country Link
US (1) US3729348A (en)
JP (1) JPS505026B1 (en)
BE (1) BE772812A (en)
CA (1) CA947186A (en)
DE (1) DE2147265B2 (en)
FR (1) FR2106326A5 (en)
GB (1) GB1355852A (en)
IT (1) IT939894B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
JPS5137915B2 (en) * 1973-10-19 1976-10-19
US4246050A (en) * 1979-07-23 1981-01-20 Varian Associates, Inc. Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US5091333A (en) * 1983-09-12 1992-02-25 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4632712A (en) * 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
FR2606036B1 (en) * 1986-11-05 1988-12-02 Pechiney PROCESS FOR OBTAINING, BY COOLING MOLTEN ALLOYS, CRYSTALS OF INTERMETALLIC COMPOUNDS, IN PARTICULAR, ISOLATED SINGLE CRYSTALS
JPH0787187B2 (en) * 1987-08-13 1995-09-20 古河電気工業株式会社 Method for manufacturing GaAs compound semiconductor substrate
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
US5228927A (en) * 1988-03-25 1993-07-20 Shin-Etsu Handotai Company Limited Method for heat-treating gallium arsenide monocrystals
JPH04198095A (en) * 1990-11-28 1992-07-17 Fujitsu Ltd Method for growing thin film of compound semiconductor
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure

Also Published As

Publication number Publication date
US3729348A (en) 1973-04-24
JPS505026B1 (en) 1975-02-27
DE2147265A1 (en) 1972-03-30
CA947186A (en) 1974-05-14
BE772812A (en) 1972-01-17
GB1355852A (en) 1974-06-05
FR2106326A5 (en) 1972-04-28
DE2147265B2 (en) 1973-08-23

Similar Documents

Publication Publication Date Title
CH516342A (en) Device for the epitaxial growth of a semiconductor layer
CA954421A (en) Semiconductor epitaxial growth from solution
IT939894B (en) PROCEDURE FOR THE GROWTH OF SEMICONDUCTOR CRYSTALS BY EPITAXIAL DEPOSITION
IT979997B (en) PROCEDURE FOR THE GROWTH OF SHAPED CRYSTALLINE BODIES
IT964507B (en) PROCEDURE FOR THE PREPARATION OF N N DIARYLOXAMIDES CONTAINING PHOSPHORUS
RO71354A (en) PROCEDURE FOR THE PREPARATION OF P-HALOPHENYL-2-PYRROLIDINONE
IT943198B (en) PROCEDURE FOR THE MANUFACTURE OF SEMICONDUCTOR MONOCRYSTALS
IT946018B (en) PROCEDURE FOR THE PREPARATION OF P MENTHENOLS
CA1002433A (en) Monocrystals of iii-v semiconductor compounds
IT966515B (en) PROCEDURE FOR THE PREPARATION OF CRYSTALLINE ZINC PORATE
IT946093B (en) PROCEDURE FOR THE PREPARATION OF CYCLIC KETONES
JPS573796A (en) Epitaxial solution growth of iii-v group ternary compound
IT1035020B (en) PROCEDURE FOR THE PREPARATION OF PENICILLAMINE
IT1043848B (en) PROCEDURE FOR THE PRODUCTION OF HARD CANDIED
IT942159B (en) PROCEDURE FOR THE PREPARATION OF 4 OXOCAPRONITRILE
IT1030016B (en) PROCEDURE FOR THE MANUFACTURE OF CANDIED FRUIT
IT989569B (en) PROCEDURE FOR THE PRODUCTION OF BETA ACYLOXYETHYLAMONIUM SALTS
IT1033052B (en) PROCEDURE FOR THE PREPARATION OF CITRONELLAL
AT316195B (en) Plant growth inhibiting mixture
IT942669B (en) PROCEDURE FOR THE PREPARATION OF BIS AROSSAZOIL PARAPOLIFENYL NI
IT996967B (en) PROCEDURE FOR THE EPITAXIAL DEPOSITION OF SEMICONDUCTORS
IT1051240B (en) PROCEDURE FOR THE PREPARATION OF ZEAXANTINA
IT942430B (en) PROCEDURE FOR THE PREPARATION OF MERCAPTOETANCLO
IT941227B (en) PROCEDURE FOR THE PREPARATION OF DITHIOLIC ORGANIC POLYSULPHURES
IT939745B (en) PROCEDURE AND APPARATUS FOR GROWTH OF CRYSTALS AND CRYSTAL OBTAINED BY THE PROCEDURE AND THE AP PARECCHIO