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Hitachi Ltd
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Hitachi Ltd
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Priority to JP4527675ApriorityCriticalpatent/JPS51120667A/en
Publication of JPS51120667ApublicationCriticalpatent/JPS51120667A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: In the growth of gallium phosphide crystals, crystals, with less pits and with good crystaline characteristic can be obtained by preprocessing the gallium solution in a high-temperature environment containing nitrogen and having it contact the substrate to form an epitaxial layer.