JPS5292475A - Growth method of semiconductor crystal - Google Patents

Growth method of semiconductor crystal

Info

Publication number
JPS5292475A
JPS5292475A JP901076A JP901076A JPS5292475A JP S5292475 A JPS5292475 A JP S5292475A JP 901076 A JP901076 A JP 901076A JP 901076 A JP901076 A JP 901076A JP S5292475 A JPS5292475 A JP S5292475A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
growth method
growth
semi
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP901076A
Other languages
Japanese (ja)
Inventor
Hirobumi Suga
Hirobumi Namisaki
Akiko Ito
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP901076A priority Critical patent/JPS5292475A/en
Publication of JPS5292475A publication Critical patent/JPS5292475A/en
Pending legal-status Critical Current

Links

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make crystal which is uniform and has few defects, and to remarkably improve the characteristic of the semi-conductor device, by controlling the oxygen concentration in the atmosphere gas used at the time of growth of the liquid phase epitaxy less than 0.1ppm.
COPYRIGHT: (C)1977,JPO&Japio
JP901076A 1976-01-30 1976-01-30 Growth method of semiconductor crystal Pending JPS5292475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP901076A JPS5292475A (en) 1976-01-30 1976-01-30 Growth method of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP901076A JPS5292475A (en) 1976-01-30 1976-01-30 Growth method of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5292475A true JPS5292475A (en) 1977-08-03

Family

ID=11708669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP901076A Pending JPS5292475A (en) 1976-01-30 1976-01-30 Growth method of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5292475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992642A (en) * 1996-05-17 1999-11-30 Kabushiki Kaisha Syst Filtering apparatus and filtering system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102779A (en) * 1972-04-10 1973-12-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102779A (en) * 1972-04-10 1973-12-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992642A (en) * 1996-05-17 1999-11-30 Kabushiki Kaisha Syst Filtering apparatus and filtering system

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