JPS51126047A - Growth device for semi-conductor crystals - Google Patents

Growth device for semi-conductor crystals

Info

Publication number
JPS51126047A
JPS51126047A JP36275A JP36275A JPS51126047A JP S51126047 A JPS51126047 A JP S51126047A JP 36275 A JP36275 A JP 36275A JP 36275 A JP36275 A JP 36275A JP S51126047 A JPS51126047 A JP S51126047A
Authority
JP
Japan
Prior art keywords
semi
growth device
conductor crystals
crystals
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP36275A
Other languages
Japanese (ja)
Inventor
Akihiro Shibatomi
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP36275A priority Critical patent/JPS51126047A/en
Publication of JPS51126047A publication Critical patent/JPS51126047A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To form a good crystal layer purifying the surface without causing damage to the basic plate in case of growth of the crystal layer and to apply the beam growth method.
COPYRIGHT: (C)1976,JPO&Japio
JP36275A 1974-12-23 1974-12-23 Growth device for semi-conductor crystals Pending JPS51126047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36275A JPS51126047A (en) 1974-12-23 1974-12-23 Growth device for semi-conductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36275A JPS51126047A (en) 1974-12-23 1974-12-23 Growth device for semi-conductor crystals

Publications (1)

Publication Number Publication Date
JPS51126047A true JPS51126047A (en) 1976-11-02

Family

ID=11471680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36275A Pending JPS51126047A (en) 1974-12-23 1974-12-23 Growth device for semi-conductor crystals

Country Status (1)

Country Link
JP (1) JPS51126047A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320093A (en) * 1989-01-19 1991-01-29 Natl Res Inst For Metals Thin film manufacturing device
JPH0677134A (en) * 1992-08-26 1994-03-18 Nec Kansai Ltd Vacuum heating method
JPH0917730A (en) * 1995-06-29 1997-01-17 Nec Corp Manufacture of thin film and thin film manufacturing equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320093A (en) * 1989-01-19 1991-01-29 Natl Res Inst For Metals Thin film manufacturing device
JPH0677134A (en) * 1992-08-26 1994-03-18 Nec Kansai Ltd Vacuum heating method
JPH0917730A (en) * 1995-06-29 1997-01-17 Nec Corp Manufacture of thin film and thin film manufacturing equipment

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