GB1305454A - - Google Patents

Info

Publication number
GB1305454A
GB1305454A GB712870A GB712870A GB1305454A GB 1305454 A GB1305454 A GB 1305454A GB 712870 A GB712870 A GB 712870A GB 712870 A GB712870 A GB 712870A GB 1305454 A GB1305454 A GB 1305454A
Authority
GB
United Kingdom
Prior art keywords
coating
silicon
carbon
feb
pyrographite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB712870A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1305454A publication Critical patent/GB1305454A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

1305454 Silicon SCHUNK & EBE GmbH 13 Feb 1970 [13 Feb 1969] 7128/70 Heading C1A In a process for the epitaxy of silicon, a heating and/or support element is used which element comprises a graphite substrate provided with a dense pyrolytically deposited carbon coating. The coating may be hard carbon or pyrographite and may be 5 to 50 Ám. thick. If desired, a silicon carbide coating may be applied to the coating of carbon.
GB712870A 1969-02-13 1970-02-13 Expired GB1305454A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691907076 DE1907076A1 (en) 1969-02-13 1969-02-13 Graphite heating and / or support element

Publications (1)

Publication Number Publication Date
GB1305454A true GB1305454A (en) 1973-01-31

Family

ID=5725061

Family Applications (1)

Application Number Title Priority Date Filing Date
GB712870A Expired GB1305454A (en) 1969-02-13 1970-02-13

Country Status (4)

Country Link
DE (1) DE1907076A1 (en)
FR (1) FR2031266A5 (en)
GB (1) GB1305454A (en)
NL (1) NL7002110A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0519608A1 (en) * 1991-05-31 1992-12-23 AT&T Corp. Substrate holder of thermally anisotropic material used for enhancing uniformity of grown epitaxial layers
EP1461824A4 (en) * 2001-10-02 2007-01-03 Actel Corp Metal-to-metal antifuse employing carbon-containing antifuse material
US7358589B1 (en) 2002-12-27 2008-04-15 Actel Corporation Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
US7390726B1 (en) 2001-10-02 2008-06-24 Actel Corporation Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
US7393722B1 (en) 2001-10-02 2008-07-01 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825013C2 (en) * 1978-06-07 1987-02-05 Concordia Sprecher-Schaltgeräte GmbH, 7024 Filderstadt Load-break switch in withdrawable design
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS5610921A (en) 1979-07-09 1981-02-03 Toshiba Ceramics Co Ltd Material for equipment for manufacturing semiconductor and its treating furnace
DE3505795A1 (en) * 1985-02-20 1986-08-21 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Method for the controlled variation of a temperature gradient in a substrate while holding constant a prescribable mean temperature

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0519608A1 (en) * 1991-05-31 1992-12-23 AT&T Corp. Substrate holder of thermally anisotropic material used for enhancing uniformity of grown epitaxial layers
EP1461824A4 (en) * 2001-10-02 2007-01-03 Actel Corp Metal-to-metal antifuse employing carbon-containing antifuse material
US7390726B1 (en) 2001-10-02 2008-06-24 Actel Corporation Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
US7393722B1 (en) 2001-10-02 2008-07-01 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
US7459763B1 (en) 2001-10-02 2008-12-02 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
US7358589B1 (en) 2002-12-27 2008-04-15 Actel Corporation Amorphous carbon metal-to-metal antifuse with adhesion promoting layers

Also Published As

Publication number Publication date
DE1907076A1 (en) 1970-09-03
NL7002110A (en) 1970-08-17
FR2031266A5 (en) 1970-11-13

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees