GB1243890A - Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal - Google Patents

Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal

Info

Publication number
GB1243890A
GB1243890A GB4038169A GB4038169A GB1243890A GB 1243890 A GB1243890 A GB 1243890A GB 4038169 A GB4038169 A GB 4038169A GB 4038169 A GB4038169 A GB 4038169A GB 1243890 A GB1243890 A GB 1243890A
Authority
GB
United Kingdom
Prior art keywords
epitaxial deposition
relating
crystal
inorganic material
silicon crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4038169A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769968 external-priority patent/DE1769968C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1243890A publication Critical patent/GB1243890A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1,243,890. Epitaxial deposition. SIEMENS A.G. 13 Aug., 1969 [14 Aug., 1968], No. 40381/69. Heading C1A. Epitaxial deposition of an inorganic substance on silicon comprises cleaning a silicon crystal by heating to above 1000‹ C. in an oxidizing atmosphere, causing the deposition of a layer of oxide 20-100 Š thick, followed by annealing the crystal preferably at 1000-1028‹ C. in an atmosphere of hydrogen or a rare gas and hydrogen whereby the oxide layer is removed, leaving a pure silicon surface. The crystal is then maintained in an atmosphere free of oxidizing agents prior to epitaxial deposition of an inorganic substance on the surface.
GB4038169A 1968-08-14 1969-08-13 Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal Expired GB1243890A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769968 DE1769968C3 (en) 1968-08-14 Process for the epitaxial deposition of inorganic material on the cleaned surface of a silicon crystal

Publications (1)

Publication Number Publication Date
GB1243890A true GB1243890A (en) 1971-08-25

Family

ID=5700349

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4038169A Expired GB1243890A (en) 1968-08-14 1969-08-13 Improvements in or relating to the epitaxial deposition of inorganic material on a surface of a silicon crystal

Country Status (7)

Country Link
AT (1) AT286935B (en)
CA (1) CA918549A (en)
CH (1) CH516649A (en)
FR (1) FR2016937A1 (en)
GB (1) GB1243890A (en)
NL (1) NL6911771A (en)
SE (1) SE348950B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Also Published As

Publication number Publication date
AT286935B (en) 1970-12-28
SE348950B (en) 1972-09-18
CH516649A (en) 1971-12-15
DE1769968B2 (en) 1976-06-10
DE1769968A1 (en) 1971-11-04
FR2016937A1 (en) 1970-05-15
NL6911771A (en) 1970-02-17
CA918549A (en) 1973-01-09

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