GB1347324A - Method of growing silicon dioxide on silicon material - Google Patents

Method of growing silicon dioxide on silicon material

Info

Publication number
GB1347324A
GB1347324A GB5196471A GB5196471A GB1347324A GB 1347324 A GB1347324 A GB 1347324A GB 5196471 A GB5196471 A GB 5196471A GB 5196471 A GB5196471 A GB 5196471A GB 1347324 A GB1347324 A GB 1347324A
Authority
GB
United Kingdom
Prior art keywords
silicon
silicon dioxide
silicon material
growing
nov
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5196471A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Publication of GB1347324A publication Critical patent/GB1347324A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1347324 Surface oxidation of silicon semiconductor materials NORTHERN ELECTRIC CO Ltd 9 Nov 1971 [10 Nov 1970] 51964/71 Heading C1A [Also in Division H1] A silicon dioxide layer is thermally grown on the surface of a silicon material by subjecting the silicon material to a temperature of 600‹ to 1200‹C. in an atmosphere composed of substantially dry oxygen and chlorine, to neutralize the electrical effects of mobile ions in the silicon dioxide layer.
GB5196471A 1970-11-10 1971-11-09 Method of growing silicon dioxide on silicon material Expired GB1347324A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA097885A CA936791A (en) 1970-11-10 1970-11-10 Method of reducing the mobile ion contamination in thermally grown silicon dioxide

Publications (1)

Publication Number Publication Date
GB1347324A true GB1347324A (en) 1974-02-27

Family

ID=4087983

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5196471A Expired GB1347324A (en) 1970-11-10 1971-11-09 Method of growing silicon dioxide on silicon material

Country Status (2)

Country Link
CA (1) CA936791A (en)
GB (1) GB1347324A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488443A1 (en) * 1980-08-11 1982-02-12 Western Electric Co METHOD AND DEVICE FOR OXIDIZING SILICON WAFERS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488443A1 (en) * 1980-08-11 1982-02-12 Western Electric Co METHOD AND DEVICE FOR OXIDIZING SILICON WAFERS

Also Published As

Publication number Publication date
CA936791A (en) 1973-11-13

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees