GB1432842A - Semi-conductor detector and method of its manufacture - Google Patents

Semi-conductor detector and method of its manufacture

Info

Publication number
GB1432842A
GB1432842A GB3482573A GB3482573A GB1432842A GB 1432842 A GB1432842 A GB 1432842A GB 3482573 A GB3482573 A GB 3482573A GB 3482573 A GB3482573 A GB 3482573A GB 1432842 A GB1432842 A GB 1432842A
Authority
GB
United Kingdom
Prior art keywords
silicon
substrate
semi
july
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3482573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1432842A publication Critical patent/GB1432842A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1432842 Semi-conductor radiation detector COMMISSARIAT A L'ENERGIE ATOMIQUE 20 July 1973 [21 July 1972] 34825/73 Addition to 1368515 Heading H1K The guard ring of a Schottky barrier radiation detector as claimed in claim 1 of Specification 1,368,515, having a substrate of silicon is insulated from the substrate by a thin layer formed by surface oxidation of the silicon in a dry atmosphere at a temperature such as not to reduce the carrier life time in the silicon. The silicon substrate may be of N-type and have (111) major faces. The ohmic contact 4 may be of an alloy and the Schottky contact 5, guard ring 6 and electrode 7 may all be of gold. The insulation 26 may be of resin or silicon oxide and insulation 11 made up from resin bodies and layers.
GB3482573A 1972-07-21 1973-07-20 Semi-conductor detector and method of its manufacture Expired GB1432842A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7226483A FR2193255B2 (en) 1972-07-21 1972-07-21

Publications (1)

Publication Number Publication Date
GB1432842A true GB1432842A (en) 1976-04-22

Family

ID=9102228

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3482573A Expired GB1432842A (en) 1972-07-21 1973-07-20 Semi-conductor detector and method of its manufacture

Country Status (3)

Country Link
FR (1) FR2193255B2 (en)
GB (1) GB1432842A (en)
IT (1) IT1046262B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2451124A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Schottky diode with overlaid polysilicon guard ring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2451124A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Schottky diode with overlaid polysilicon guard ring

Also Published As

Publication number Publication date
IT1046262B (en) 1980-06-30
FR2193255B2 (en) 1976-07-23
FR2193255A2 (en) 1974-02-15

Similar Documents

Publication Publication Date Title
GB721671A (en) Signal translating devices utilizing semiconductive bodies and methods of making them
GB967263A (en) A process for use in the production of a semi-conductor device
GB1036430A (en) Improvements in the manufacture of silicon semi-conductor devices by diffusion techniques
GB940520A (en) Improvements in semiconductor devices
GB1400313A (en) Method of producing semiconductor device
GB1337283A (en) Method of manufacturing a semiconductor device
GB1092727A (en) The production of a semi-conductor thyratron of the pnpn-type
FR2194047A1 (en)
GB1432842A (en) Semi-conductor detector and method of its manufacture
GB1381489A (en) Method of manufacturing a semiconductor element
US4000505A (en) Thin oxide MOS solar cells
GB973837A (en) Improvements in semiconductor devices and methods of making same
GB968106A (en) Improvements in or relating to semiconductor devices
GB1396807A (en) Semiconductor based thermoelements
GB973722A (en) Improvements in or relating to semiconductor devices
GB1228819A (en)
JPS5522879A (en) Insulation gate type field effect semiconductor device
GB975960A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB940681A (en) Semiconductor devices
JPS5670675A (en) Manufacture of photoelectric converter
GB1074726A (en) Improvements in or relating to the manufacture of semiconductor structures
GB1158585A (en) Gate Controlled Switches
FR2108097A1 (en) Bipolar photo-transistor - with one electrode formed by anti-reflective transparent layer
JPS5522880A (en) Manufacturing method of insulation gate type field effect semiconductor device
GB1195515A (en) Four-Region Semiconductor Switch

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees