GB1432842A - Semi-conductor detector and method of its manufacture - Google Patents
Semi-conductor detector and method of its manufactureInfo
- Publication number
- GB1432842A GB1432842A GB3482573A GB3482573A GB1432842A GB 1432842 A GB1432842 A GB 1432842A GB 3482573 A GB3482573 A GB 3482573A GB 3482573 A GB3482573 A GB 3482573A GB 1432842 A GB1432842 A GB 1432842A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- substrate
- semi
- july
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1432842 Semi-conductor radiation detector COMMISSARIAT A L'ENERGIE ATOMIQUE 20 July 1973 [21 July 1972] 34825/73 Addition to 1368515 Heading H1K The guard ring of a Schottky barrier radiation detector as claimed in claim 1 of Specification 1,368,515, having a substrate of silicon is insulated from the substrate by a thin layer formed by surface oxidation of the silicon in a dry atmosphere at a temperature such as not to reduce the carrier life time in the silicon. The silicon substrate may be of N-type and have (111) major faces. The ohmic contact 4 may be of an alloy and the Schottky contact 5, guard ring 6 and electrode 7 may all be of gold. The insulation 26 may be of resin or silicon oxide and insulation 11 made up from resin bodies and layers.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7226483A FR2193255B2 (en) | 1972-07-21 | 1972-07-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1432842A true GB1432842A (en) | 1976-04-22 |
Family
ID=9102228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3482573A Expired GB1432842A (en) | 1972-07-21 | 1973-07-20 | Semi-conductor detector and method of its manufacture |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR2193255B2 (en) |
GB (1) | GB1432842A (en) |
IT (1) | IT1046262B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2451124A (en) * | 2007-07-20 | 2009-01-21 | X Fab Uk Ltd | Schottky diode with overlaid polysilicon guard ring |
-
1972
- 1972-07-21 FR FR7226483A patent/FR2193255B2/fr not_active Expired
-
1973
- 1973-07-19 IT IT6916273A patent/IT1046262B/en active
- 1973-07-20 GB GB3482573A patent/GB1432842A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2451124A (en) * | 2007-07-20 | 2009-01-21 | X Fab Uk Ltd | Schottky diode with overlaid polysilicon guard ring |
Also Published As
Publication number | Publication date |
---|---|
IT1046262B (en) | 1980-06-30 |
FR2193255B2 (en) | 1976-07-23 |
FR2193255A2 (en) | 1974-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |