GB2451124A - Schottky diode with overlaid polysilicon guard ring - Google Patents
Schottky diode with overlaid polysilicon guard ring Download PDFInfo
- Publication number
- GB2451124A GB2451124A GB0714121A GB0714121A GB2451124A GB 2451124 A GB2451124 A GB 2451124A GB 0714121 A GB0714121 A GB 0714121A GB 0714121 A GB0714121 A GB 0714121A GB 2451124 A GB2451124 A GB 2451124A
- Authority
- GB
- United Kingdom
- Prior art keywords
- schottky diode
- conductive material
- terminal
- diode according
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 206010010144 Completed suicide Diseases 0.000 claims abstract description 9
- 230000015556 catabolic process Effects 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A Schottky diode comprising two terminals, an anode (20) and a cathode (21), wherein a first terminal (8) comprises a metal or a metal suicide or is essentially metallic, and the second terminal (11) is made from a semiconductor material, wherein at least a portion of the edge of the first terminal is in close proximity to, or in contact with, a conductive material (2). The conductive material can constitute a guard ring around the first terminal and be of polycrystalline silicon or polysilicon in lightly doped or undoped variants. Compared to in substrate doped region guard-rings reverse bias leakage is lowered since there is not formed a pnp bipolar transistor with parasitic bipolar leakage from the anode to the p-type substrate (12). The guard ring may be connected to the anode or it may be electrically connected separately to make it possible to bias it differently by applying a different voltage than to the anode. Alternatively the guard ring can be unconnected to form a floating guard ring which will automatically find the best potential.
Description
Schottky Diode The present invention relates to a Schottky diode. A Schottky diode (sometimes also referred to as rectifier) is a semiconductor diode made by the intimate contact of a metal with a doped semiconductor. It is often used in circuits for high speed rectification but can also be used for charge pumps and has a range of other uses as an electronic component.
Schottky diodes can be made with a variety of metals or refractory silicides in contact with silicon. Hence they are compatible with planar silicon semiconductor processes and can be combined with many other components on integrated circuits. Schottky diodes can be made using metal contacts to any semiconductor material, provided that the work function is suitable. While embodiments of the invention will be described with reference to a metal-silicon diode, it is to be noted that the invention is not limited thereto.
Problems are often associated with the manufacture of Schottky diodes. One of these is the need for the semiconductor material to be very lightly doped. This is required to ensure that the junction is well behaved and gives the best diode properties, i.e. to conduct well in the forward bias direction and not to conduct very much with reverse bias, until a large voltage is reached. However the lightly doped semiconductor has a relatively large series resistance. Hence the maximum current flow can be restricted by the series resistance. Further, self heating can occur in the semiconductor due to its resistance, which may cause thermal instability.
With a high reverse bias the diode will start to conduct abruptly at the breakdown voltage. This is generally many volts (e.g. 30V), but tends to be somewhat lower on Schottky diodes than PN junction diodes using a similar semiconductor doping. In forward bias the diode current increases exponentially and a forward voltage drop occurs for practical current flows. One feature of the Schottky diode is that the forward voltage drop is very low compared to doped PN junction diodes. It is generally about O.25V whereas silicon PN diodes have forward voltage drops of about O.7V. This makes the component particularly useful for low voltage signal rectification and also voltage clamping applications.
Schottky diodes have superior switching speeds compared to PN junction diodes. This is because, unlike in the case of a PN junction, the conduction process involves majority carriers in the semiconductor flowing into the metal. There is essentially no delay for the diode to switch from conducting to non-conducting state because there is no p-type to n-type zone which needs to form, as is the case for the PN junction diode. The superior speed of operation of Schottky diodes makes them very useful for RF signal rectification and high speed switching.
However, the relatively high reverse bias leakage of Schottky diodes compared to PN junction diodes poses a problem. Diode leakage is caused by the generation of extra carriers within the diode metal to semiconductor interface with reverse bias. Hence the quality of the interface is critical in determining the reverse leakage. Leakages can be very high, in particular at the edges of a Schottky diode because the edge may be more defective. Also reverse breakdown voltages tend to be lower at the edges of the Schottky diode due to electric field enhancement at the sharp edge.
One known technique of addressing the leakage issues with Schottky diodes involves insetting the metal interface into the semiconductor active area and to add a doped semiconductor ring around the edge of the diode. An example of this technique is illustrated in Fig. I. The components of the Schottky diode shown in Fig. I are as follows: 1. Metallisation connection wiring layer
3. Field isolation dielectric layer
4. P-type semiconductor diffusion; lightly doped 6. N-type semiconductor diffusion; lightly doped 8. Metal Suicide layer used to connect to the semiconductor 9. Contact hole containing a metal contact to the device from the wiring layer 10. Dielectric layer; isolates wiring layer from the device 11. Highly doped N-type semiconductor for ohmic connection to cathode of diode 12. Lightly doped P-type semiconductor substrate 13. Moderately doped P-type semiconductor diffusion ring termination at the edge of the anode suicide layer For metal connections to n-type silicon (such as n-type diffusion 6) the additional ring 13 is p-type. This p-type ring 13 forms a PN junction diode at the edge of the component and prevents the very high Schottky diode leakage which would otherwise be seen at the edge.
The present inventors have appreciated a drawback associated with this solution: the p-type ring 13 forms a PNP bipolar transistor with the n-type semiconductor diffusion 6 and the p-type silicon substrate material 12. Hence there is a parasitic bipolar leakage from the anode 20 to the p-type substrate 12, the substrate being the universal ground of any IC circuitry. This leakage term can be significant and because it is to the ground, it can be very detrimental to some types of circuits -e.g. charge pumps.
The present invention aims to address this drawback.
According to an aspect of the present invention there is provided a Schottky diode comprising an anode and a cathode, the anode comprising a metal or metal suicide in contact with a semiconductor material, wherein at least a portion of the lateral edge of the metal or metal suicide is in close proximity to, or in contact with, a conductive material.
The conductive material is preferably made from polysilicon material and is preferably provided in the form of a guard ring around the anode active area.
At least preferred embodiments of the invention allow the problematic leakage to substrate to be reduced considerably.
Preferred embodiments provide a polysilicon guard ring around the diode anode. This modifies the surface potential of the silicon underneath the guard ring, adjacent to the Schottky metal contact, to minimise reverse bias leakage since it also enables the diode to be formed where the semiconductor is flattest and cleanest, given that reverse leakage is dependent on the surface interface quality and electric field at the edges.
Some preferred embodiments of the invention will now be described by way of example only and with reference to the accompanying drawings, in which: Figure 1 shows a sectional view, and a plan view of the layout of a known Schottky diode.
Figure 2 a sectional view and a plan view of the layout of a Schottky diode according to an embodiment of the present invention.
An embodiment of the present invention will now be described with reference to Fig. 2.
Corresponding features shown in Figs. I and 2 carry the same reference signs.
In the embodiment shown in Fig. 2 a lightly doped n-type well region 6 for the cathode 21 of the Schottky diode is used. Hence the cathode is simply junction isolated from the p-type silicon body (substrate) 12 which supports all the IC components. Within the n-type well 6 is a region 14 of surface (immediately below metal or metal silicide layer 8 and dielectric layer 7) used to make the device which is surrounded by a thick insulating dielectric (the field oxide) 3. A moderately doped n-type semiconductor diffusion 5 is also provided optionally within well region 6, under cathode 21, to reduce forward resistance.
A doped poly-crystalline silicon (polysilicon) guard ring 2 is provided around the anode. It covers the edge of the active area of the anode 20 (the silicon surface which forms the device) and overlaps over the field oxide zone 3 surrounding the anode 20. A thin oxide layer (gate dielectric layer) 7 is formed under the polysilicon 2 so that the ring is electrically isolated from the silicon active area. Within the "hole" in the polysilicon ring there is the silicided region 8, which forms the metallic anode part of the diode, and a thin dielectric spacer region (not shown) between the silicided region 8 and the polysilicon material 2. The anode 20 is electrically connected to the polysilicon guard ring 2 using a metal wire (not shown) connected to the contact 16 to the silicided area 8 and contacts 17 to the polysilicon ring 2.
With this configuration there is no need to use a p-type diffused junction region as in the diode shown in Fig. 1. Hence the parasitic PNP bipolar component is substantially eliminated -thus reducing the leakage current between the anode and substrate.
The leakage is also suppressed or at least reduced compared to a simple region of active area which is merely bounded by a field oxide region. In that prior art case the surface states at the edge of the active area, and abrupt junction corner may cause a very large reverse bias leakage and also very low breakdown voltage. By way of contrast, pursuant to the present invention, the low number of surface states at the edge of the suicide 8 where it meets the spacer dielectric at the edge of the polysilicon 2 means that the leakage is reduced. The polysilicon ring 2 also causes the surface potential to be modified at the edge of the suicide 8 so that the leakage due to electric field intensity there is reduced. This surface field reduction at the edge tends to give a larger reverse breakdown voltage.
In experiments the Inventors have found that the guard ring 2 does not otherwise interfere with the normal diode behaviour in forward or reverse bias.
In a variant of the above embodiment the polysilicon guard ring 2 may be electrically connected to a separate wire, i.e. not connected to the anode 20, to allow it to be biased separately from the anode 20. Alternatively, it is also possible to leave the polysilicon guard ring 2 unconnected, in which case this forms a floating guard ring, which will automatically find the best potential.
In a further variant, the polysilicon guard ring is lightly doped, or undoped, which changes the behaviour of the electric field by allowing the polysilicon to absorb some of the potential drop. In this case, it may not be necessary to make an electrical connection to the polysilicon. But it is also possible to make a connection to the guard ring and connect this to a potential which may be the cathode, anode or another value so as to optimise the breakdown voltage and leakage of the Schottky diode.
Whilst the above embodiment has been described with reference to a guard ring 2, it is not absolutely essential that the polysilicon material is provided as a ring. Firstly, the precise geometry (square, rectangle etc.) of the silicon material is immaterial to some or even a large extent. Secondly, the polysilicon material need not fully surround the suicide material 8. Some benefit can be obtained even if the polysilicon material is provided as an incomplete ring (e.g. a ring with an interruption), or even only as one or more strips or similar in proximity with the silicide material 8.
In Fig. 2, a layer of material (not labelled) is located on the guard ring 2. This layer may be of the same material as the material 8. This serves to facilitate connection to the guard ring 2. This layer may but does not have to be in contact with material 8.
However, the "edge of the silicide material" refers to the (lateral) edge of material 8, not the edge of the unlabelled layer of material on guard ring 2.
It will be appreciated that instead of a metal silicide the material 8 may be made from a metal or similar. Further, the guard ring may be made from any conductive material, although polysilicon is preferred. It will also be appreciated that all doping polarities may be reversed when compared with those mentioned above.
Although the invention has been described in terms of preferred embodiments as set forth above, it should be understood that these embodiments are illustrative only and that the claims are not limited to those embodiments. Those skilled in the art will be able to make modifications and alternatives in view of the disclosure which are contemplated as falling within the scope of the appended claims. Each feature disclosed or illustrated in the present specification may be incorporated in the invention, whether alone or in any appropriate combination with any other feature disclosed or illustrated herein.
Claims (17)
- CLAIMS: 1. A Schottky diode comprising two terminals, an anode and a cathode, wherein a first terminal comprises a metal or a metal suicide or is essentially metallic, and the second terminal is made from a semiconductor material, wherein at least a portion of the edge of the first terminal is in close proximity to, or in contact with, a conductive material.
- 2. A Schottky diode according to claim I, wherein said portion of the edge of the first terminal is in sufficiently close proximity to the conductive material so that reverse bias leakage is reduced when compared with a substantially similar diode without the conductive material.
- 3. A Schottky diode according to claim 2, wherein said reverse bias leakage is leakage to the substrate.
- 4. A Schottky diode according to any preceding claim, wherein the conductive material laterally surrounds the first terminal.
- 5. A Schottky diode according to any preceding claim, wherein the conductive material forms a ring around the first terminal.
- 6. A Schottky diode according to any preceding claim, wherein the conductive material is electrically insulated from the semiconductor material.
- 7. A Schottky diode according to claim 6, wherein a dielectric material is located between the conductive material and the semiconductor material.
- 8. A Schottky diode according to any preceding claim, wherein a dielectric material is located between the edge of the first terminal and the conductive material.
- 9. A Schottky diode according to claim 8, wherein the dielectric material is located adjacent the conductive material and comprises an insulating layer underneath the conductive material and an insulating spacer between the conductive material and the first terminal.
- 10. A Schottky diode according to claim 9, wherein the insulating layer has a thickness of between I and 100 nm and the spacer has a thickness of between 5Onm and nm, preferably around 100 nm.
- 11. A Schottky diode according to any preceding claim, further comprising a first electrical connection to the first terminal and a second electrical connection to the conductive material.
- 12. A Schottky diode according to claim 11, wherein the first and second electrical connections are connected together.
- 13. A Schottky diode according to claim 11, wherein the first and second electrical connections are not connected together so that different voltages can be applied to the first and second electrical connections.
- 14. A Schottky diode according to any preceding claim, wherein the conductive material comprises polysilicon.
- 15. A Schottky diode according to claim 1, wherein the first terminal is in contact with the conductive material without any spacer therebetween.
- 16. A Schottky diode according to claim 1, wherein the conductive material is lightly doped or undoped so as to increase the breakdown voltage compared to a similar diode without the conductive material.
- 17. A Schottky diode, substantially as herein described with reference to, or as illustrated in, Fig. 2 of the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0714121A GB2451124A (en) | 2007-07-20 | 2007-07-20 | Schottky diode with overlaid polysilicon guard ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0714121A GB2451124A (en) | 2007-07-20 | 2007-07-20 | Schottky diode with overlaid polysilicon guard ring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0714121D0 GB0714121D0 (en) | 2007-08-29 |
| GB2451124A true GB2451124A (en) | 2009-01-21 |
Family
ID=38476642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0714121A Withdrawn GB2451124A (en) | 2007-07-20 | 2007-07-20 | Schottky diode with overlaid polysilicon guard ring |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2451124A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120211859A1 (en) * | 2011-02-18 | 2012-08-23 | Stribley Paul R | Schottky diode |
| CN105206685A (en) * | 2015-09-28 | 2015-12-30 | 上海华虹宏力半导体制造有限公司 | High-voltage Schottky diode device |
| CN116093164A (en) * | 2023-04-07 | 2023-05-09 | 深圳市晶扬电子有限公司 | High-voltage Schottky diode with floating island type protection ring |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1432842A (en) * | 1972-07-21 | 1976-04-22 | Commissariat Energie Atomique | Semi-conductor detector and method of its manufacture |
| JPS60157268A (en) * | 1984-01-26 | 1985-08-17 | Rohm Co Ltd | Schottky barrier diode |
| JPS63221668A (en) * | 1987-03-10 | 1988-09-14 | Mitsubishi Electric Corp | Schottky barrier diode and manufacture thereof |
| US5418185A (en) * | 1993-01-21 | 1995-05-23 | Texas Instruments Incorporated | Method of making schottky diode with guard ring |
| JP2002009302A (en) * | 2000-06-19 | 2002-01-11 | Nippon Inter Electronics Corp | Schottky barrier type semiconductor device and its manufacturing method |
| JP2004186660A (en) * | 2002-10-11 | 2004-07-02 | Nippon Inter Electronics Corp | Schottky barrier diode and method for manufacturing the same |
| US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
-
2007
- 2007-07-20 GB GB0714121A patent/GB2451124A/en not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1432842A (en) * | 1972-07-21 | 1976-04-22 | Commissariat Energie Atomique | Semi-conductor detector and method of its manufacture |
| JPS60157268A (en) * | 1984-01-26 | 1985-08-17 | Rohm Co Ltd | Schottky barrier diode |
| JPS63221668A (en) * | 1987-03-10 | 1988-09-14 | Mitsubishi Electric Corp | Schottky barrier diode and manufacture thereof |
| US5418185A (en) * | 1993-01-21 | 1995-05-23 | Texas Instruments Incorporated | Method of making schottky diode with guard ring |
| JP2002009302A (en) * | 2000-06-19 | 2002-01-11 | Nippon Inter Electronics Corp | Schottky barrier type semiconductor device and its manufacturing method |
| JP2004186660A (en) * | 2002-10-11 | 2004-07-02 | Nippon Inter Electronics Corp | Schottky barrier diode and method for manufacturing the same |
| US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120211859A1 (en) * | 2011-02-18 | 2012-08-23 | Stribley Paul R | Schottky diode |
| US8513764B2 (en) * | 2011-02-18 | 2013-08-20 | X-Fab Semiconductor Foundries Ag | Schottky diode |
| CN105206685A (en) * | 2015-09-28 | 2015-12-30 | 上海华虹宏力半导体制造有限公司 | High-voltage Schottky diode device |
| CN116093164A (en) * | 2023-04-07 | 2023-05-09 | 深圳市晶扬电子有限公司 | High-voltage Schottky diode with floating island type protection ring |
| CN116093164B (en) * | 2023-04-07 | 2023-07-11 | 深圳市晶扬电子有限公司 | High-voltage Schottky diode with floating island type protection ring |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0714121D0 (en) | 2007-08-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |