GB0714121D0 - Schottky diode - Google Patents
Schottky diodeInfo
- Publication number
- GB0714121D0 GB0714121D0 GBGB0714121.1A GB0714121A GB0714121D0 GB 0714121 D0 GB0714121 D0 GB 0714121D0 GB 0714121 A GB0714121 A GB 0714121A GB 0714121 D0 GB0714121 D0 GB 0714121D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- schottky diode
- schottky
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0714121A GB2451124A (en) | 2007-07-20 | 2007-07-20 | Schottky diode with overlaid polysilicon guard ring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0714121A GB2451124A (en) | 2007-07-20 | 2007-07-20 | Schottky diode with overlaid polysilicon guard ring |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0714121D0 true GB0714121D0 (en) | 2007-08-29 |
GB2451124A GB2451124A (en) | 2009-01-21 |
Family
ID=38476642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0714121A Withdrawn GB2451124A (en) | 2007-07-20 | 2007-07-20 | Schottky diode with overlaid polysilicon guard ring |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2451124A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8513764B2 (en) * | 2011-02-18 | 2013-08-20 | X-Fab Semiconductor Foundries Ag | Schottky diode |
CN105206685A (en) * | 2015-09-28 | 2015-12-30 | 上海华虹宏力半导体制造有限公司 | High-voltage Schottky diode device |
CN116093164B (en) * | 2023-04-07 | 2023-07-11 | 深圳市晶扬电子有限公司 | High-voltage Schottky diode with floating island type protection ring |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2193255B2 (en) * | 1972-07-21 | 1976-07-23 | Commissariat Energie Atomique | |
JPS60157268A (en) * | 1984-01-26 | 1985-08-17 | Rohm Co Ltd | Schottky barrier diode |
JP2535885B2 (en) * | 1987-03-10 | 1996-09-18 | 三菱電機株式会社 | Schottky barrier diode and manufacturing method thereof |
US5418185A (en) * | 1993-01-21 | 1995-05-23 | Texas Instruments Incorporated | Method of making schottky diode with guard ring |
JP3466543B2 (en) * | 2000-06-19 | 2003-11-10 | 日本インター株式会社 | Schottky barrier type semiconductor device and manufacturing method thereof |
JP2004186660A (en) * | 2002-10-11 | 2004-07-02 | Nippon Inter Electronics Corp | Schottky barrier diode and method for manufacturing the same |
US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
-
2007
- 2007-07-20 GB GB0714121A patent/GB2451124A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2451124A (en) | 2009-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |