FR2016937A1 - - Google Patents

Info

Publication number
FR2016937A1
FR2016937A1 FR6926838A FR6926838A FR2016937A1 FR 2016937 A1 FR2016937 A1 FR 2016937A1 FR 6926838 A FR6926838 A FR 6926838A FR 6926838 A FR6926838 A FR 6926838A FR 2016937 A1 FR2016937 A1 FR 2016937A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6926838A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769968 external-priority patent/DE1769968C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2016937A1 publication Critical patent/FR2016937A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
FR6926838A 1968-08-14 1969-08-05 Withdrawn FR2016937A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769968 DE1769968C3 (en) 1968-08-14 Process for the epitaxial deposition of inorganic material on the cleaned surface of a silicon crystal

Publications (1)

Publication Number Publication Date
FR2016937A1 true FR2016937A1 (en) 1970-05-15

Family

ID=5700349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6926838A Withdrawn FR2016937A1 (en) 1968-08-14 1969-08-05

Country Status (7)

Country Link
AT (1) AT286935B (en)
CA (1) CA918549A (en)
CH (1) CH516649A (en)
FR (1) FR2016937A1 (en)
GB (1) GB1243890A (en)
NL (1) NL6911771A (en)
SE (1) SE348950B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2325190A1 (en) * 1975-09-22 1977-04-15 Signetics Corp PROCESS FOR DECREASING THE DENSITY OF CRYSTALLINE DEFECTS IN AN INTEGRATED CIRCUIT

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2325190A1 (en) * 1975-09-22 1977-04-15 Signetics Corp PROCESS FOR DECREASING THE DENSITY OF CRYSTALLINE DEFECTS IN AN INTEGRATED CIRCUIT

Also Published As

Publication number Publication date
NL6911771A (en) 1970-02-17
AT286935B (en) 1970-12-28
DE1769968B2 (en) 1976-06-10
DE1769968A1 (en) 1971-11-04
SE348950B (en) 1972-09-18
GB1243890A (en) 1971-08-25
CA918549A (en) 1973-01-09
CH516649A (en) 1971-12-15

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Legal Events

Date Code Title Description
ST Notification of lapse