CA918549A - Epitaxial deposition of inorganic material on a surface of a silicon crystal - Google Patents

Epitaxial deposition of inorganic material on a surface of a silicon crystal

Info

Publication number
CA918549A
CA918549A CA059501A CA59501A CA918549A CA 918549 A CA918549 A CA 918549A CA 059501 A CA059501 A CA 059501A CA 59501 A CA59501 A CA 59501A CA 918549 A CA918549 A CA 918549A
Authority
CA
Canada
Prior art keywords
inorganic material
silicon crystal
epitaxial deposition
epitaxial
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA059501A
Other versions
CA59501S (en
Inventor
Sussmann Erhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769968 external-priority patent/DE1769968C3/en
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA918549A publication Critical patent/CA918549A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CA059501A 1968-08-14 1969-08-14 Epitaxial deposition of inorganic material on a surface of a silicon crystal Expired CA918549A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769968 DE1769968C3 (en) 1968-08-14 Process for the epitaxial deposition of inorganic material on the cleaned surface of a silicon crystal

Publications (1)

Publication Number Publication Date
CA918549A true CA918549A (en) 1973-01-09

Family

ID=5700349

Family Applications (1)

Application Number Title Priority Date Filing Date
CA059501A Expired CA918549A (en) 1968-08-14 1969-08-14 Epitaxial deposition of inorganic material on a surface of a silicon crystal

Country Status (7)

Country Link
AT (1) AT286935B (en)
CA (1) CA918549A (en)
CH (1) CH516649A (en)
FR (1) FR2016937A1 (en)
GB (1) GB1243890A (en)
NL (1) NL6911771A (en)
SE (1) SE348950B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer

Also Published As

Publication number Publication date
AT286935B (en) 1970-12-28
SE348950B (en) 1972-09-18
CH516649A (en) 1971-12-15
DE1769968B2 (en) 1976-06-10
DE1769968A1 (en) 1971-11-04
FR2016937A1 (en) 1970-05-15
NL6911771A (en) 1970-02-17
GB1243890A (en) 1971-08-25

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