CA996845A - N-type silicon carbide monocrystal - Google Patents

N-type silicon carbide monocrystal

Info

Publication number
CA996845A
CA996845A CA163,038A CA163038A CA996845A CA 996845 A CA996845 A CA 996845A CA 163038 A CA163038 A CA 163038A CA 996845 A CA996845 A CA 996845A
Authority
CA
Canada
Prior art keywords
silicon carbide
type silicon
carbide monocrystal
monocrystal
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA163,038A
Other versions
CA163038S (en
Inventor
Vladimir M. Efimov
Evgenia A. Belousova
Igor I. Kruglov
Vadim I. Pavlichenko
Igor V. Ryzhikov
Larisa A. Stroganova
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU1742653A external-priority patent/SU430797A1/en
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of CA996845A publication Critical patent/CA996845A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/343—Materials of the light emitting region containing only elements of group IV of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
CA163,038A 1972-02-08 1973-02-06 N-type silicon carbide monocrystal Expired CA996845A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU1742653A SU430797A1 (en) 1972-02-08 1972-02-08 The way to create a diode light source on silicon carbide
SU1795129 1972-06-08

Publications (1)

Publication Number Publication Date
CA996845A true CA996845A (en) 1976-09-14

Family

ID=26665454

Family Applications (1)

Application Number Title Priority Date Filing Date
CA163,038A Expired CA996845A (en) 1972-02-08 1973-02-06 N-type silicon carbide monocrystal

Country Status (5)

Country Link
CA (1) CA996845A (en)
DD (2) DD116733A1 (en)
FR (1) FR2171184B1 (en)
GB (1) GB1423037A (en)
IT (1) IT977246B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019095632A1 (en) * 2017-11-14 2019-05-23 山东天岳先进材料科技有限公司 Method for preparing semi-insulating silicon carbide single crystal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633051A (en) * 1983-11-23 1986-12-30 Advanced Semiconductor Materials America, Inc. Stable conductive elements for direct exposure to reactive environments

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1268952A (en) * 1959-10-08 1961-08-04 Wacker Chemie Gmbh Manufacturing process of high purity crystalline carbides, nitrides and borides
DE1802350C3 (en) * 1968-10-10 1974-01-24 Tatjana G. Kmita Electroluminescent semiconductor diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019095632A1 (en) * 2017-11-14 2019-05-23 山东天岳先进材料科技有限公司 Method for preparing semi-insulating silicon carbide single crystal

Also Published As

Publication number Publication date
FR2171184A1 (en) 1973-09-21
DD108213A1 (en) 1974-09-12
DE2305544A1 (en) 1973-10-11
IT977246B (en) 1974-09-10
DE2305544B2 (en) 1975-09-18
DD116733A1 (en) 1975-12-05
GB1423037A (en) 1976-01-28
FR2171184B1 (en) 1979-05-04

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