IT977246B - N-TYPE SILICON CARBIDE MONOCRYSTAL METHOD OF IT FORMATION AND APPLICATION OF SILICON CARBIDE MONOCRYSTAL IN SEMICONDUCTOR-BASED LIGHT SOURCES - Google Patents
N-TYPE SILICON CARBIDE MONOCRYSTAL METHOD OF IT FORMATION AND APPLICATION OF SILICON CARBIDE MONOCRYSTAL IN SEMICONDUCTOR-BASED LIGHT SOURCESInfo
- Publication number
- IT977246B IT977246B IT4811773A IT4811773A IT977246B IT 977246 B IT977246 B IT 977246B IT 4811773 A IT4811773 A IT 4811773A IT 4811773 A IT4811773 A IT 4811773A IT 977246 B IT977246 B IT 977246B
- Authority
- IT
- Italy
- Prior art keywords
- silicon carbide
- carbide monocrystal
- semiconductor
- formation
- light sources
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 2
- 229910010271 silicon carbide Inorganic materials 0.000 title 2
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1742653A SU430797A1 (en) | 1972-02-08 | 1972-02-08 | The way to create a diode light source on silicon carbide |
| SU1795129 | 1972-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT977246B true IT977246B (en) | 1974-09-10 |
Family
ID=26665454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT4811773A IT977246B (en) | 1972-02-08 | 1973-02-07 | N-TYPE SILICON CARBIDE MONOCRYSTAL METHOD OF IT FORMATION AND APPLICATION OF SILICON CARBIDE MONOCRYSTAL IN SEMICONDUCTOR-BASED LIGHT SOURCES |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA996845A (en) |
| DD (2) | DD116733A1 (en) |
| FR (1) | FR2171184B1 (en) |
| GB (1) | GB1423037A (en) |
| IT (1) | IT977246B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4633051A (en) * | 1983-11-23 | 1986-12-30 | Advanced Semiconductor Materials America, Inc. | Stable conductive elements for direct exposure to reactive environments |
| CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1268952A (en) * | 1959-10-08 | 1961-08-04 | Wacker Chemie Gmbh | Manufacturing process of high purity crystalline carbides, nitrides and borides |
| DE1802350C3 (en) * | 1968-10-10 | 1974-01-24 | Tatjana G. Kmita | Electroluminescent semiconductor diode |
-
1973
- 1973-02-01 GB GB510373A patent/GB1423037A/en not_active Expired
- 1973-02-06 FR FR7304133A patent/FR2171184B1/fr not_active Expired
- 1973-02-06 DD DD17890973A patent/DD116733A1/xx unknown
- 1973-02-06 DD DD16873273A patent/DD108213A1/xx unknown
- 1973-02-06 CA CA163,038A patent/CA996845A/en not_active Expired
- 1973-02-07 IT IT4811773A patent/IT977246B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| CA996845A (en) | 1976-09-14 |
| FR2171184B1 (en) | 1979-05-04 |
| DD108213A1 (en) | 1974-09-12 |
| GB1423037A (en) | 1976-01-28 |
| DE2305544B2 (en) | 1975-09-18 |
| FR2171184A1 (en) | 1973-09-21 |
| DE2305544A1 (en) | 1973-10-11 |
| DD116733A1 (en) | 1975-12-05 |
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