DK139798C - THYRISTOR WITH MONOLITIC INTEGRATED DIODE AND METHOD OF MANUFACTURE THEREOF - Google Patents
THYRISTOR WITH MONOLITIC INTEGRATED DIODE AND METHOD OF MANUFACTURE THEREOFInfo
- Publication number
- DK139798C DK139798C DK611774A DK611774A DK139798C DK 139798 C DK139798 C DK 139798C DK 611774 A DK611774 A DK 611774A DK 611774 A DK611774 A DK 611774A DK 139798 C DK139798 C DK 139798C
- Authority
- DK
- Denmark
- Prior art keywords
- monolitic
- thyristor
- manufacture
- integrated diode
- diode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732360081 DE2360081C3 (en) | 1973-12-03 | Thyristor with a monolithically integrated diode and process for its manufacture |
Publications (3)
Publication Number | Publication Date |
---|---|
DK611774A DK611774A (en) | 1975-07-28 |
DK139798B DK139798B (en) | 1979-04-17 |
DK139798C true DK139798C (en) | 1979-09-17 |
Family
ID=5899690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK611774A DK139798C (en) | 1973-12-03 | 1974-11-25 | THYRISTOR WITH MONOLITIC INTEGRATED DIODE AND METHOD OF MANUFACTURE THEREOF |
Country Status (6)
Country | Link |
---|---|
AT (1) | AT361043B (en) |
DK (1) | DK139798C (en) |
FI (1) | FI61773C (en) |
FR (1) | FR2253285B1 (en) |
GB (1) | GB1495295A (en) |
IT (1) | IT1030860B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2451106A1 (en) * | 1979-03-09 | 1980-10-03 | Thomson Csf | HIGH FREQUENCY SWITCHING SEMICONDUCTOR DEVICE |
DE3004681A1 (en) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones |
FR2514558A1 (en) * | 1981-10-13 | 1983-04-15 | Silicium Semiconducteur Ssc | Semiconductor device using asymmetric thyristor - which is formed in mono:crystalline silicon substrate alongside diode with inverse conduction |
FR2574594B1 (en) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | INTEGRATED TRIAC STRUCTURE CONTROLLED BY DIAC |
GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
JPH05152564A (en) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | Reverse conducting gate turn on thyristor and its manufacture |
-
1974
- 1974-11-25 DK DK611774A patent/DK139798C/en active
- 1974-12-02 AT AT962674A patent/AT361043B/en not_active IP Right Cessation
- 1974-12-02 IT IT3008474A patent/IT1030860B/en active
- 1974-12-02 FI FI348874A patent/FI61773C/en active
- 1974-12-03 FR FR7439527A patent/FR2253285B1/fr not_active Expired
- 1974-12-03 GB GB5222874A patent/GB1495295A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2360081B2 (en) | 1977-04-28 |
DK139798B (en) | 1979-04-17 |
AT361043B (en) | 1981-02-10 |
GB1495295A (en) | 1977-12-14 |
FR2253285B1 (en) | 1979-07-27 |
ATA962674A (en) | 1980-07-15 |
FR2253285A1 (en) | 1975-06-27 |
DE2360081A1 (en) | 1975-06-12 |
FI61773C (en) | 1982-09-10 |
DK611774A (en) | 1975-07-28 |
IT1030860B (en) | 1979-04-10 |
FI348874A (en) | 1975-06-04 |
FI61773B (en) | 1982-05-31 |
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