IT1030860B - TYRISTOR WITH MONOLITHICALLY INTEGRATED DIODE AND PROCESS FOR ITS MANUFACTURING - Google Patents

TYRISTOR WITH MONOLITHICALLY INTEGRATED DIODE AND PROCESS FOR ITS MANUFACTURING

Info

Publication number
IT1030860B
IT1030860B IT3008474A IT3008474A IT1030860B IT 1030860 B IT1030860 B IT 1030860B IT 3008474 A IT3008474 A IT 3008474A IT 3008474 A IT3008474 A IT 3008474A IT 1030860 B IT1030860 B IT 1030860B
Authority
IT
Italy
Prior art keywords
tyristor
manufacturing
monolithically integrated
integrated diode
diode
Prior art date
Application number
IT3008474A
Other languages
Italian (it)
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732360081 external-priority patent/DE2360081C3/en
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Application granted granted Critical
Publication of IT1030860B publication Critical patent/IT1030860B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IT3008474A 1973-12-03 1974-12-02 TYRISTOR WITH MONOLITHICALLY INTEGRATED DIODE AND PROCESS FOR ITS MANUFACTURING IT1030860B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732360081 DE2360081C3 (en) 1973-12-03 Thyristor with a monolithically integrated diode and process for its manufacture

Publications (1)

Publication Number Publication Date
IT1030860B true IT1030860B (en) 1979-04-10

Family

ID=5899690

Family Applications (1)

Application Number Title Priority Date Filing Date
IT3008474A IT1030860B (en) 1973-12-03 1974-12-02 TYRISTOR WITH MONOLITHICALLY INTEGRATED DIODE AND PROCESS FOR ITS MANUFACTURING

Country Status (6)

Country Link
AT (1) AT361043B (en)
DK (1) DK139798C (en)
FI (1) FI61773C (en)
FR (1) FR2253285B1 (en)
GB (1) GB1495295A (en)
IT (1) IT1030860B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2451106A1 (en) * 1979-03-09 1980-10-03 Thomson Csf HIGH FREQUENCY SWITCHING SEMICONDUCTOR DEVICE
DE3004681A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones
FR2514558A1 (en) * 1981-10-13 1983-04-15 Silicium Semiconducteur Ssc Semiconductor device using asymmetric thyristor - which is formed in mono:crystalline silicon substrate alongside diode with inverse conduction
FR2574594B1 (en) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc INTEGRATED TRIAC STRUCTURE CONTROLLED BY DIAC
GB2256743A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A semiconductor component for transient voltage limiting
GB2256744A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A monolithic semiconductor component for transient voltage suppression
JPH05152564A (en) * 1991-12-02 1993-06-18 Mitsubishi Electric Corp Reverse conducting gate turn on thyristor and its manufacture

Also Published As

Publication number Publication date
ATA962674A (en) 1980-07-15
AT361043B (en) 1981-02-10
DE2360081A1 (en) 1975-06-12
DE2360081B2 (en) 1977-04-28
FR2253285A1 (en) 1975-06-27
DK139798B (en) 1979-04-17
FI61773B (en) 1982-05-31
FI61773C (en) 1982-09-10
DK611774A (en) 1975-07-28
FR2253285B1 (en) 1979-07-27
GB1495295A (en) 1977-12-14
DK139798C (en) 1979-09-17
FI348874A (en) 1975-06-04

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