GB1423037A - Silicon carbide - Google Patents
Silicon carbideInfo
- Publication number
- GB1423037A GB1423037A GB510373A GB510373A GB1423037A GB 1423037 A GB1423037 A GB 1423037A GB 510373 A GB510373 A GB 510373A GB 510373 A GB510373 A GB 510373A GB 1423037 A GB1423037 A GB 1423037A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- layer
- feb
- seeding
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 238000010899 nucleation Methods 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000370 acceptor Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 229910018507 Al—Ni Inorganic materials 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910004337 Ti-Ni Inorganic materials 0.000 abstract 1
- 229910011209 Ti—Ni Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 abstract 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1423037 Silicon nitride V M EFIMOV E A BELOUSOVA I I KRUGLOV V I PAVLICHENKO I V RYZNIKOV and L A STROGANOVA 1 Feb 1973 [8 Feb 1972 8 June 1972] 5103/73 Heading C1A [Also in Divisions H1 and C4] N-type SiC having an uncompensated donor concentration of 1-3 Î 10<SP>18</SP> cm.<SP>-3</SP> contains dislocations in a density of no more than 10<SP>2</SP> cm<SP>-2</SP> and residual acceptor impurities (Fe, Ni, Al, B, Mg, Mn, Cu and Ti) in a total concentration of 1-8 Î 10<SP>16</SP> cm.<SP>-3</SP>. Such material is made by mixing together and vacuumizing grains of Si and graphite, loading the resulting charge into a crucible containing a seeding crystal provided with seeding holes, heating to about 2100‹ C., evacuating and feeding in argon containing nitrogen, and then raising the temperature to 2650-2700‹ C. with a gradient of 2-4 degrees/ cm. over the crucible height. In these conditions N-type SiC resublimes at the seeding holes. The donor impurities disclosed are nitrogen and oxygen. N-type SiC made in this way is used as the basis for electroluminescent diodes. The N-type body is provided with a P-type layer, e.g. doped with Al, separated from the N-type material by a thin intermediate higher resistivity layer doped with both donors (N, O) and acceptors (B). Two-layer Al-Ni and Ti-Ni electrodes are applied to the P-type layer and the N-type body respectively. Gaseous phase diffusion of first Al then B is referred, dysprosium oxide and/or silicon oxide being added to the Al during diffusion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1742653A SU430797A1 (en) | 1972-02-08 | 1972-02-08 | The way to create a diode light source on silicon carbide |
| SU1795129 | 1972-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1423037A true GB1423037A (en) | 1976-01-28 |
Family
ID=26665454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB510373A Expired GB1423037A (en) | 1972-02-08 | 1973-02-01 | Silicon carbide |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA996845A (en) |
| DD (2) | DD116733A1 (en) |
| FR (1) | FR2171184B1 (en) |
| GB (1) | GB1423037A (en) |
| IT (1) | IT977246B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2150126A (en) * | 1983-11-23 | 1985-06-26 | Advanced Semiconductor Mat | Stable conductive/elements for direct exposure to reactive environments |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1268952A (en) * | 1959-10-08 | 1961-08-04 | Wacker Chemie Gmbh | Manufacturing process of high purity crystalline carbides, nitrides and borides |
| DE1802350C3 (en) * | 1968-10-10 | 1974-01-24 | Tatjana G. Kmita | Electroluminescent semiconductor diode |
-
1973
- 1973-02-01 GB GB510373A patent/GB1423037A/en not_active Expired
- 1973-02-06 FR FR7304133A patent/FR2171184B1/fr not_active Expired
- 1973-02-06 DD DD17890973A patent/DD116733A1/xx unknown
- 1973-02-06 DD DD16873273A patent/DD108213A1/xx unknown
- 1973-02-06 CA CA163,038A patent/CA996845A/en not_active Expired
- 1973-02-07 IT IT4811773A patent/IT977246B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2150126A (en) * | 1983-11-23 | 1985-06-26 | Advanced Semiconductor Mat | Stable conductive/elements for direct exposure to reactive environments |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2171184A1 (en) | 1973-09-21 |
| CA996845A (en) | 1976-09-14 |
| DE2305544B2 (en) | 1975-09-18 |
| FR2171184B1 (en) | 1979-05-04 |
| DD108213A1 (en) | 1974-09-12 |
| DE2305544A1 (en) | 1973-10-11 |
| DD116733A1 (en) | 1975-12-05 |
| IT977246B (en) | 1974-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |