GB1423037A - Silicon carbide - Google Patents

Silicon carbide

Info

Publication number
GB1423037A
GB1423037A GB510373A GB510373A GB1423037A GB 1423037 A GB1423037 A GB 1423037A GB 510373 A GB510373 A GB 510373A GB 510373 A GB510373 A GB 510373A GB 1423037 A GB1423037 A GB 1423037A
Authority
GB
United Kingdom
Prior art keywords
type
layer
feb
seeding
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB510373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OTHERS
Original Assignee
OTHERS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU1742653A external-priority patent/SU430797A1/en
Application filed by OTHERS filed Critical OTHERS
Publication of GB1423037A publication Critical patent/GB1423037A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/34Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/343Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0054Processes for devices with an active region comprising only group IV elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1423037 Silicon nitride V M EFIMOV E A BELOUSOVA I I KRUGLOV V I PAVLICHENKO I V RYZNIKOV and L A STROGANOVA 1 Feb 1973 [8 Feb 1972 8 June 1972] 5103/73 Heading C1A [Also in Divisions H1 and C4] N-type SiC having an uncompensated donor concentration of 1-3 Î 10<SP>18</SP> cm.<SP>-3</SP> contains dislocations in a density of no more than 10<SP>2</SP> cm<SP>-2</SP> and residual acceptor impurities (Fe, Ni, Al, B, Mg, Mn, Cu and Ti) in a total concentration of 1-8 Î 10<SP>16</SP> cm.<SP>-3</SP>. Such material is made by mixing together and vacuumizing grains of Si and graphite, loading the resulting charge into a crucible containing a seeding crystal provided with seeding holes, heating to about 2100‹ C., evacuating and feeding in argon containing nitrogen, and then raising the temperature to 2650-2700‹ C. with a gradient of 2-4 degrees/ cm. over the crucible height. In these conditions N-type SiC resublimes at the seeding holes. The donor impurities disclosed are nitrogen and oxygen. N-type SiC made in this way is used as the basis for electroluminescent diodes. The N-type body is provided with a P-type layer, e.g. doped with Al, separated from the N-type material by a thin intermediate higher resistivity layer doped with both donors (N, O) and acceptors (B). Two-layer Al-Ni and Ti-Ni electrodes are applied to the P-type layer and the N-type body respectively. Gaseous phase diffusion of first Al then B is referred, dysprosium oxide and/or silicon oxide being added to the Al during diffusion.
GB510373A 1972-02-08 1973-02-01 Silicon carbide Expired GB1423037A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU1742653A SU430797A1 (en) 1972-02-08 1972-02-08 The way to create a diode light source on silicon carbide
SU1795129 1972-06-08

Publications (1)

Publication Number Publication Date
GB1423037A true GB1423037A (en) 1976-01-28

Family

ID=26665454

Family Applications (1)

Application Number Title Priority Date Filing Date
GB510373A Expired GB1423037A (en) 1972-02-08 1973-02-01 Silicon carbide

Country Status (5)

Country Link
CA (1) CA996845A (en)
DD (2) DD108213A1 (en)
FR (1) FR2171184B1 (en)
GB (1) GB1423037A (en)
IT (1) IT977246B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150126A (en) * 1983-11-23 1985-06-26 Advanced Semiconductor Mat Stable conductive/elements for direct exposure to reactive environments

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107974712A (en) * 2017-11-14 2018-05-01 山东天岳先进材料科技有限公司 A kind of preparation method of Semi-insulating silicon carbide mono-crystal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1268952A (en) * 1959-10-08 1961-08-04 Wacker Chemie Gmbh Manufacturing process of high purity crystalline carbides, nitrides and borides
DE1802350C3 (en) * 1968-10-10 1974-01-24 Tatjana G. Kmita Electroluminescent semiconductor diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150126A (en) * 1983-11-23 1985-06-26 Advanced Semiconductor Mat Stable conductive/elements for direct exposure to reactive environments

Also Published As

Publication number Publication date
DD108213A1 (en) 1974-09-12
CA996845A (en) 1976-09-14
FR2171184A1 (en) 1973-09-21
IT977246B (en) 1974-09-10
DD116733A1 (en) 1975-12-05
DE2305544A1 (en) 1973-10-11
DE2305544B2 (en) 1975-09-18
FR2171184B1 (en) 1979-05-04

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee