DD108213A1 - - Google Patents
Info
- Publication number
- DD108213A1 DD108213A1 DD16873273A DD16873273A DD108213A1 DD 108213 A1 DD108213 A1 DD 108213A1 DD 16873273 A DD16873273 A DD 16873273A DD 16873273 A DD16873273 A DD 16873273A DD 108213 A1 DD108213 A1 DD 108213A1
- Authority
- DD
- German Democratic Republic
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
- H01L33/343—Materials of the light emitting region containing only elements of group IV of the periodic system characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1742653A SU430797A1 (en) | 1972-02-08 | 1972-02-08 | The way to create a diode light source on silicon carbide |
| SU1795129 | 1972-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD108213A1 true DD108213A1 (en) | 1974-09-12 |
Family
ID=26665454
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD17890973A DD116733A1 (en) | 1972-02-08 | 1973-02-06 | |
| DD16873273A DD108213A1 (en) | 1972-02-08 | 1973-02-06 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD17890973A DD116733A1 (en) | 1972-02-08 | 1973-02-06 |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA996845A (en) |
| DD (2) | DD116733A1 (en) |
| FR (1) | FR2171184B1 (en) |
| GB (1) | GB1423037A (en) |
| IT (1) | IT977246B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4633051A (en) * | 1983-11-23 | 1986-12-30 | Advanced Semiconductor Materials America, Inc. | Stable conductive elements for direct exposure to reactive environments |
| CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1268952A (en) * | 1959-10-08 | 1961-08-04 | Wacker Chemie Gmbh | Manufacturing process of high purity crystalline carbides, nitrides and borides |
| DE1802350C3 (en) * | 1968-10-10 | 1974-01-24 | Tatjana G. Kmita | Electroluminescent semiconductor diode |
-
1973
- 1973-02-01 GB GB510373A patent/GB1423037A/en not_active Expired
- 1973-02-06 DD DD17890973A patent/DD116733A1/xx unknown
- 1973-02-06 FR FR7304133A patent/FR2171184B1/fr not_active Expired
- 1973-02-06 CA CA163,038A patent/CA996845A/en not_active Expired
- 1973-02-06 DD DD16873273A patent/DD108213A1/xx unknown
- 1973-02-07 IT IT4811773A patent/IT977246B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| GB1423037A (en) | 1976-01-28 |
| FR2171184A1 (en) | 1973-09-21 |
| DE2305544A1 (en) | 1973-10-11 |
| IT977246B (en) | 1974-09-10 |
| DE2305544B2 (en) | 1975-09-18 |
| FR2171184B1 (en) | 1979-05-04 |
| CA996845A (en) | 1976-09-14 |
| DD116733A1 (en) | 1975-12-05 |