CA978663A - Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase - Google Patents

Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase

Info

Publication number
CA978663A
CA978663A CA146,902A CA146902A CA978663A CA 978663 A CA978663 A CA 978663A CA 146902 A CA146902 A CA 146902A CA 978663 A CA978663 A CA 978663A
Authority
CA
Canada
Prior art keywords
layer
liquid phase
crystalline material
flat side
epitaxial deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA146,902A
Other versions
CA146902S (en
Inventor
Elie Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA978663A publication Critical patent/CA978663A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/12Liquid-phase epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA146,902A 1971-07-13 1972-07-12 Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase Expired CA978663A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7125739A FR2145831A6 (en) 1971-07-13 1971-07-13

Publications (1)

Publication Number Publication Date
CA978663A true CA978663A (en) 1975-11-25

Family

ID=9080335

Family Applications (1)

Application Number Title Priority Date Filing Date
CA146,902A Expired CA978663A (en) 1971-07-13 1972-07-12 Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase

Country Status (8)

Country Link
JP (1) JPS5219191B1 (en)
BE (1) BE786137A (en)
CA (1) CA978663A (en)
DE (1) DE2233734C3 (en)
FR (1) FR2145831A6 (en)
GB (1) GB1399918A (en)
IT (1) IT964629B (en)
NL (1) NL7209537A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120081A (en) * 1974-08-12 1976-02-17 Hitachi Ltd Ketsushoseichohoho oyobi sochi

Also Published As

Publication number Publication date
GB1399918A (en) 1975-07-02
DE2233734B2 (en) 1977-08-25
BE786137A (en) 1973-01-11
NL7209537A (en) 1973-01-16
DE2233734C3 (en) 1978-04-27
FR2145831A6 (en) 1973-02-23
IT964629B (en) 1974-01-31
DE2233734A1 (en) 1973-01-18
JPS5219191B1 (en) 1977-05-26

Similar Documents

Publication Publication Date Title
BE788374A (en) PROCESS FOR DEPOSITING AN EPITAXIAL LAYER OF A SEMICONDUCTOR MATERIAL ON THE SURFACE OF A SUBSTRATE
CA986393A (en) Method and apparatus for epitaxially growing a semiconductor material on a substrate from the liquid phase
CA1018475A (en) Method and apparatus for thin film deposition on a substrate
CA959803A (en) Method and apparatus for depositing precisely metered quantities of liquid on a surface
IT1011349B (en) DEVICE AND PROCEDURE FOR THE CHEMICAL DEPOSITION OF EPITAXIAL LAYERS ON SEMICONDUCTIVE SUBSTRATES
YU39168B (en) Process for the preparation of a palladium catalyst process for the deposition of a combined layer of heteroepitaxial silicon on a heated substrate of sapphire or spine
CA949683A (en) Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate
BE819487A (en) PROCEDURE FOR COMPENSATION OF INTERFACIAL LOADS IN THE CASE OF THIN SILICON LAYERS FORMED BY EPITAXIAL GROWTH ON A SUBSTRATE
CA1022438A (en) Method of epitaxially depositing a semiconductor material on a substrate
CA1026217A (en) Method of and device for growing epitaxial layers from the liquid phase
CA1022439A (en) Method of depositing epitaxial layers on a substrate from the liquid phase
CA998577A (en) Method of depositing a metal on a surface of a substrate
CA1036272A (en) Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same
CA955832A (en) Method of forming semiconductor device with smooth flat surface
CA978663A (en) Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase
CA868641A (en) Method for etching silicon nitride films with sharp edge definition
GB2055055B (en) Method for growing a liquid phase epitaxial layer on a semiconductor substrate
CA997255A (en) Apparatus for growing single crystals
AU4566672A (en) Method of epitaxially depositing ternary iii-v compounds from the liquid phase
GB2045639B (en) Process for the production of epitaxial layers of semiconductor material on monocrystalline substrates
NO158289C (en) PROCEDURE FOR PREPARING A PLATE WITH A SURFACE COATED WITH SILICON CARBID CRYSTAL CRYSTALS.
CA1018872A (en) Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions
CA1018639A (en) Device comprising a layer of liquid crystal
CA918549A (en) Epitaxial deposition of inorganic material on a surface of a silicon crystal
CA982914A (en) Device for growing crystals from a starting material