JPS5232000A - Process of silicon nitride thin film - Google Patents
Process of silicon nitride thin filmInfo
- Publication number
- JPS5232000A JPS5232000A JP10824575A JP10824575A JPS5232000A JP S5232000 A JPS5232000 A JP S5232000A JP 10824575 A JP10824575 A JP 10824575A JP 10824575 A JP10824575 A JP 10824575A JP S5232000 A JPS5232000 A JP S5232000A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon nitride
- nitride thin
- insulating
- condenser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
Abstract
PURPOSE:The silicon nitride thin film, which is used for such insulating foil as insulating zone of condenser, can be obtained in a comparatively lower temperature and in a fairly shorter period.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50108245A JPS5843322B2 (en) | 1975-09-06 | 1975-09-06 | Titsukakei Sohaku Makuno Seizouhouhou |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50108245A JPS5843322B2 (en) | 1975-09-06 | 1975-09-06 | Titsukakei Sohaku Makuno Seizouhouhou |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5232000A true JPS5232000A (en) | 1977-03-10 |
JPS5843322B2 JPS5843322B2 (en) | 1983-09-26 |
Family
ID=14479751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50108245A Expired JPS5843322B2 (en) | 1975-09-06 | 1975-09-06 | Titsukakei Sohaku Makuno Seizouhouhou |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5843322B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53127771U (en) * | 1977-03-18 | 1978-10-11 | ||
JP2015106572A (en) * | 2013-11-28 | 2015-06-08 | 大陽日酸株式会社 | Method for forming silicon nitride film, and silicon nitride film |
-
1975
- 1975-09-06 JP JP50108245A patent/JPS5843322B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53127771U (en) * | 1977-03-18 | 1978-10-11 | ||
JPS5736147Y2 (en) * | 1977-03-18 | 1982-08-10 | ||
JP2015106572A (en) * | 2013-11-28 | 2015-06-08 | 大陽日酸株式会社 | Method for forming silicon nitride film, and silicon nitride film |
Also Published As
Publication number | Publication date |
---|---|
JPS5843322B2 (en) | 1983-09-26 |
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