JPS5269273A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5269273A
JPS5269273A JP14497675A JP14497675A JPS5269273A JP S5269273 A JPS5269273 A JP S5269273A JP 14497675 A JP14497675 A JP 14497675A JP 14497675 A JP14497675 A JP 14497675A JP S5269273 A JPS5269273 A JP S5269273A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
selectively
region
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14497675A
Other languages
Japanese (ja)
Inventor
Yutaka Hirano
Minoru Matsumoto
Akira Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14497675A priority Critical patent/JPS5269273A/en
Publication of JPS5269273A publication Critical patent/JPS5269273A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To form a shallow base diffusing region selectively and to make a high efficient high frequency transistor by forming BSC or PSG film selectively thinly on the region base-diffused.
COPYRIGHT: (C)1977,JPO&Japio
JP14497675A 1975-12-08 1975-12-08 Production of semiconductor device Pending JPS5269273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14497675A JPS5269273A (en) 1975-12-08 1975-12-08 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14497675A JPS5269273A (en) 1975-12-08 1975-12-08 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5269273A true JPS5269273A (en) 1977-06-08

Family

ID=15374567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14497675A Pending JPS5269273A (en) 1975-12-08 1975-12-08 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5269273A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541121A (en) * 1995-01-30 1996-07-30 Texas Instruments Incorporated Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541121A (en) * 1995-01-30 1996-07-30 Texas Instruments Incorporated Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer

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