JPS5269273A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5269273A JPS5269273A JP14497675A JP14497675A JPS5269273A JP S5269273 A JPS5269273 A JP S5269273A JP 14497675 A JP14497675 A JP 14497675A JP 14497675 A JP14497675 A JP 14497675A JP S5269273 A JPS5269273 A JP S5269273A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- selectively
- region
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To form a shallow base diffusing region selectively and to make a high efficient high frequency transistor by forming BSC or PSG film selectively thinly on the region base-diffused.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14497675A JPS5269273A (en) | 1975-12-08 | 1975-12-08 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14497675A JPS5269273A (en) | 1975-12-08 | 1975-12-08 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5269273A true JPS5269273A (en) | 1977-06-08 |
Family
ID=15374567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14497675A Pending JPS5269273A (en) | 1975-12-08 | 1975-12-08 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5269273A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5541121A (en) * | 1995-01-30 | 1996-07-30 | Texas Instruments Incorporated | Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer |
-
1975
- 1975-12-08 JP JP14497675A patent/JPS5269273A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5541121A (en) * | 1995-01-30 | 1996-07-30 | Texas Instruments Incorporated | Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer |
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