JPS5347779A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5347779A
JPS5347779A JP12260176A JP12260176A JPS5347779A JP S5347779 A JPS5347779 A JP S5347779A JP 12260176 A JP12260176 A JP 12260176A JP 12260176 A JP12260176 A JP 12260176A JP S5347779 A JPS5347779 A JP S5347779A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
base
emitter electrodes
spacing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12260176A
Other languages
Japanese (ja)
Other versions
JPS5820138B2 (en
Inventor
Junichi Nishizawa
Kenji Yamamoto
Akira Ito
Yukio Higaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP12260176A priority Critical patent/JPS5820138B2/en
Publication of JPS5347779A publication Critical patent/JPS5347779A/en
Publication of JPS5820138B2 publication Critical patent/JPS5820138B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the spacing between base and emitter electrodes and obtain a semiconductor device having fine patterns by respectively forming the base and emitter electrodes.
COPYRIGHT: (C)1978,JPO&Japio
JP12260176A 1976-10-13 1976-10-13 Manufacturing method of semiconductor device Expired JPS5820138B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12260176A JPS5820138B2 (en) 1976-10-13 1976-10-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12260176A JPS5820138B2 (en) 1976-10-13 1976-10-13 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5347779A true JPS5347779A (en) 1978-04-28
JPS5820138B2 JPS5820138B2 (en) 1983-04-21

Family

ID=14839958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12260176A Expired JPS5820138B2 (en) 1976-10-13 1976-10-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5820138B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61254470A (en) * 1984-12-17 1986-11-12 マイヤ−・ウント・ツイ−・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング・ウント・コムパニ− Strand housing and delivery device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61254470A (en) * 1984-12-17 1986-11-12 マイヤ−・ウント・ツイ−・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング・ウント・コムパニ− Strand housing and delivery device

Also Published As

Publication number Publication date
JPS5820138B2 (en) 1983-04-21

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