GB1014288A - A process for the production of a doped zone in a body of semi-conductor material - Google Patents

A process for the production of a doped zone in a body of semi-conductor material

Info

Publication number
GB1014288A
GB1014288A GB4569463A GB4569463A GB1014288A GB 1014288 A GB1014288 A GB 1014288A GB 4569463 A GB4569463 A GB 4569463A GB 4569463 A GB4569463 A GB 4569463A GB 1014288 A GB1014288 A GB 1014288A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
oxygen
produced
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4569463A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1014288A publication Critical patent/GB1014288A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Silicon Compounds (AREA)

Abstract

1,014,288. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Nov. 19, 1963 [Dec. 12, 1962], No. 45694/63. Heading H1K. A doped zone in a semi-conductor body is produced by diffusing from a layer of doping material incorporated in an oxide of the semiconductor body by heating in air to more than 1000‹ C. The layer may be produced as described in Specification 1,014,287 by directing on to the body a mixture of water vapour, a first substance which splits off hydrogen and/or alkali ions and volatilizes and a second substance containing the doping material; such a mixture may consist of water or hydrogen peroxide, hydrochloric acid and boric acid and/or aluminium chloride. In one example, the layer is produced by passing a current of nitrogen containing boron iodide through a quartz tube containing silicon discs, followed by a current of oxygen. Alternatively, a flow of B 2 O 3 in oxygen or P 2 O 5 in oxygen may be used. Fig. 1 shows a suitable furnace for the diffusion process. Silicon discs 2 with the doped oxide layer are heated to 1280‹ C. in a quartz tube 3 which is closed by paper or sintered steel or nickel filters 6 which allow exchange of air.
GB4569463A 1962-12-12 1963-11-19 A process for the production of a doped zone in a body of semi-conductor material Expired GB1014288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082822 1962-12-12

Publications (1)

Publication Number Publication Date
GB1014288A true GB1014288A (en) 1965-12-22

Family

ID=7510628

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4569463A Expired GB1014288A (en) 1962-12-12 1963-11-19 A process for the production of a doped zone in a body of semi-conductor material

Country Status (5)

Country Link
AT (1) AT240417B (en)
BE (1) BE641092A (en)
CH (1) CH411802A (en)
GB (1) GB1014288A (en)
NL (1) NL298176A (en)

Also Published As

Publication number Publication date
BE641092A (en) 1964-06-11
AT240417B (en) 1965-05-25
NL298176A (en)
CH411802A (en) 1966-04-30

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