JPS6482634A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6482634A JPS6482634A JP24211387A JP24211387A JPS6482634A JP S6482634 A JPS6482634 A JP S6482634A JP 24211387 A JP24211387 A JP 24211387A JP 24211387 A JP24211387 A JP 24211387A JP S6482634 A JPS6482634 A JP S6482634A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- film
- sio2
- heater
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve damp-proof performance, by coating a surface of a semiconductor device with a silicon oxide film which is provided with chemical vapor phase epitaxy. CONSTITUTION:A sample 102 heated by a heater 104 is located in a reaction furnace 101 of a chemical vapor phase device and a reaction of ozone to organic silane is used to form a silicon oxide film. A semiconductor element 203 is mounted on a lead frame 202, and an electrode 204 is connected with outer drawn lines 201 by the use of gold lines. A surface of the semiconductor device is coated with SiO2 206. The semiconductor element 203 and the electrode 204 are hence extremely improved in their damp-proof performance. Subsequently the semiconductor device coated with the SiO2 film 206 is left as it is in an oxygen atmosphere 302, and it is heated by a heater 303 and next it is irradiated with ultraviolet rays 301, so that annealing is performed to improve film quality of the SiO2 film 206.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62242113A JPH07120734B2 (en) | 1987-09-25 | 1987-09-25 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62242113A JPH07120734B2 (en) | 1987-09-25 | 1987-09-25 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6482634A true JPS6482634A (en) | 1989-03-28 |
JPH07120734B2 JPH07120734B2 (en) | 1995-12-20 |
Family
ID=17084491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62242113A Expired - Lifetime JPH07120734B2 (en) | 1987-09-25 | 1987-09-25 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07120734B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03198338A (en) * | 1989-12-27 | 1991-08-29 | Handotai Process Kenkyusho:Kk | Forming method of vapor growth film and semiconductor device |
US5127643A (en) * | 1991-10-16 | 1992-07-07 | Xerox Corporation | Automatic copy sheet selection device |
JPH04359515A (en) * | 1991-06-06 | 1992-12-11 | Nec Corp | Method and apparatus for plasma chemical vapor growth and manufacture of multlayer wiring |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933914A (en) * | 1972-06-09 | 1974-03-28 | ||
JPS4996300A (en) * | 1973-01-19 | 1974-09-12 | ||
JPS59111333A (en) * | 1982-12-09 | 1984-06-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming sio2 by converting sio region into sio2 region |
-
1987
- 1987-09-25 JP JP62242113A patent/JPH07120734B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933914A (en) * | 1972-06-09 | 1974-03-28 | ||
JPS4996300A (en) * | 1973-01-19 | 1974-09-12 | ||
JPS59111333A (en) * | 1982-12-09 | 1984-06-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming sio2 by converting sio region into sio2 region |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03198338A (en) * | 1989-12-27 | 1991-08-29 | Handotai Process Kenkyusho:Kk | Forming method of vapor growth film and semiconductor device |
JPH04359515A (en) * | 1991-06-06 | 1992-12-11 | Nec Corp | Method and apparatus for plasma chemical vapor growth and manufacture of multlayer wiring |
US5127643A (en) * | 1991-10-16 | 1992-07-07 | Xerox Corporation | Automatic copy sheet selection device |
Also Published As
Publication number | Publication date |
---|---|
JPH07120734B2 (en) | 1995-12-20 |
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