JPS6482634A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6482634A
JPS6482634A JP24211387A JP24211387A JPS6482634A JP S6482634 A JPS6482634 A JP S6482634A JP 24211387 A JP24211387 A JP 24211387A JP 24211387 A JP24211387 A JP 24211387A JP S6482634 A JPS6482634 A JP S6482634A
Authority
JP
Japan
Prior art keywords
semiconductor device
film
sio2
heater
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24211387A
Other languages
Japanese (ja)
Other versions
JPH07120734B2 (en
Inventor
Yoshiaki Hisamune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62242113A priority Critical patent/JPH07120734B2/en
Publication of JPS6482634A publication Critical patent/JPS6482634A/en
Publication of JPH07120734B2 publication Critical patent/JPH07120734B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve damp-proof performance, by coating a surface of a semiconductor device with a silicon oxide film which is provided with chemical vapor phase epitaxy. CONSTITUTION:A sample 102 heated by a heater 104 is located in a reaction furnace 101 of a chemical vapor phase device and a reaction of ozone to organic silane is used to form a silicon oxide film. A semiconductor element 203 is mounted on a lead frame 202, and an electrode 204 is connected with outer drawn lines 201 by the use of gold lines. A surface of the semiconductor device is coated with SiO2 206. The semiconductor element 203 and the electrode 204 are hence extremely improved in their damp-proof performance. Subsequently the semiconductor device coated with the SiO2 film 206 is left as it is in an oxygen atmosphere 302, and it is heated by a heater 303 and next it is irradiated with ultraviolet rays 301, so that annealing is performed to improve film quality of the SiO2 film 206.
JP62242113A 1987-09-25 1987-09-25 Method for manufacturing semiconductor device Expired - Lifetime JPH07120734B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242113A JPH07120734B2 (en) 1987-09-25 1987-09-25 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242113A JPH07120734B2 (en) 1987-09-25 1987-09-25 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6482634A true JPS6482634A (en) 1989-03-28
JPH07120734B2 JPH07120734B2 (en) 1995-12-20

Family

ID=17084491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242113A Expired - Lifetime JPH07120734B2 (en) 1987-09-25 1987-09-25 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH07120734B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03198338A (en) * 1989-12-27 1991-08-29 Handotai Process Kenkyusho:Kk Forming method of vapor growth film and semiconductor device
US5127643A (en) * 1991-10-16 1992-07-07 Xerox Corporation Automatic copy sheet selection device
JPH04359515A (en) * 1991-06-06 1992-12-11 Nec Corp Method and apparatus for plasma chemical vapor growth and manufacture of multlayer wiring

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933914A (en) * 1972-06-09 1974-03-28
JPS4996300A (en) * 1973-01-19 1974-09-12
JPS59111333A (en) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming sio2 by converting sio region into sio2 region

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933914A (en) * 1972-06-09 1974-03-28
JPS4996300A (en) * 1973-01-19 1974-09-12
JPS59111333A (en) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming sio2 by converting sio region into sio2 region

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03198338A (en) * 1989-12-27 1991-08-29 Handotai Process Kenkyusho:Kk Forming method of vapor growth film and semiconductor device
JPH04359515A (en) * 1991-06-06 1992-12-11 Nec Corp Method and apparatus for plasma chemical vapor growth and manufacture of multlayer wiring
US5127643A (en) * 1991-10-16 1992-07-07 Xerox Corporation Automatic copy sheet selection device

Also Published As

Publication number Publication date
JPH07120734B2 (en) 1995-12-20

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