JPS57184215A - Forming impurity diffusion layer on surface of semiconductor element substrate - Google Patents
Forming impurity diffusion layer on surface of semiconductor element substrateInfo
- Publication number
- JPS57184215A JPS57184215A JP3956382A JP3956382A JPS57184215A JP S57184215 A JPS57184215 A JP S57184215A JP 3956382 A JP3956382 A JP 3956382A JP 3956382 A JP3956382 A JP 3956382A JP S57184215 A JPS57184215 A JP S57184215A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- layer
- impurity
- thin film
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title abstract 10
- 239000012535 impurity Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000003973 paint Substances 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve uniformity and reproducibility of a semiconductor element with low sheet resistance and establish efficiently massproduction by diffusion process from a thin film multiple layer containing thin layer with impurity of high density. CONSTITUTION:After a silicon oxide film 2 serving as a first layer thin film containing no diffusion impurity has been formed on N type silicon substrate 1, a paint material 3 containing saturated amount of boron trioxide is formed as a second layer thin film containing diffusion impurity of high density. Ethyl silicate 4 containing no diffusion impurity is coated thereon to form a third layer thin film and further the foregoing thin layer 3 containing diffusion impurity and the ethyl silicate 4 are formed again. Thereafter, a diffusion treatment is achieved within the diffusion furnace while performing heating, thereby and impurity diffusion layer 5 and silicon oxide film 6 are formed on the surface of silicon substrate 1 through the foregoing process. Thereafter, the diffusion layer having a low sheet resistance can be obtained by removing therefrom the oxide film 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956382A JPS5811730B2 (en) | 1982-03-15 | 1982-03-15 | Method of forming an impurity diffusion layer on the surface of a semiconductor element substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956382A JPS5811730B2 (en) | 1982-03-15 | 1982-03-15 | Method of forming an impurity diffusion layer on the surface of a semiconductor element substrate |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52053705A Division JPS6011803B2 (en) | 1977-05-12 | 1977-05-12 | Method of forming an impurity diffusion layer on the surface of a semiconductor element substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57184215A true JPS57184215A (en) | 1982-11-12 |
| JPS5811730B2 JPS5811730B2 (en) | 1983-03-04 |
Family
ID=12556543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3956382A Expired JPS5811730B2 (en) | 1982-03-15 | 1982-03-15 | Method of forming an impurity diffusion layer on the surface of a semiconductor element substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5811730B2 (en) |
-
1982
- 1982-03-15 JP JP3956382A patent/JPS5811730B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5811730B2 (en) | 1983-03-04 |
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