JPS5898933A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5898933A JPS5898933A JP19786881A JP19786881A JPS5898933A JP S5898933 A JPS5898933 A JP S5898933A JP 19786881 A JP19786881 A JP 19786881A JP 19786881 A JP19786881 A JP 19786881A JP S5898933 A JPS5898933 A JP S5898933A
- Authority
- JP
- Japan
- Prior art keywords
- film
- vapor deposition
- deposition method
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000012528 membrane Substances 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、半導体装置の製造方法に関する。[Detailed description of the invention] The present invention relates to a method for manufacturing a semiconductor device.
従来、８１半導体基＊＊面に直接接する誘電体８１ｏ３
や８１５Ｍ４膜等の形Ｗ、は熱酸化あるいは熱窒化法に
よるのが通例とされている。その理由は、熱酸化あるい
は熱窒化処理が高量で行なわれ、形成された誘電体膜と
半導体基板との界面準位密度が非常に小さくなるからで
ある。Conventionally, the dielectric material 81o3 is in direct contact with the 81 semiconductor substrate** surface.
Type W, such as 815M4 and 815M4 films, are usually formed by thermal oxidation or thermal nitridation. The reason for this is that thermal oxidation or thermal nitridation treatment is performed in large quantities, and the interface state density between the formed dielectric film and the semiconductor substrate becomes extremely small.
しかし、上記熱酸化法等による従来技術では、半導体基
板が長時間高ｉＩに晒され九り、８１以外の半導体基板
上に熱酸化膜を形成するのが困難になる等の欠点があっ
た。However, the conventional techniques using the thermal oxidation method and the like have drawbacks such as exposing the semiconductor substrate to high iI for a long time and making it difficult to form a thermal oxide film on semiconductor substrates other than 81.
本発明は、かかる従来技術の欠点をなくシ、化学蒸着（
０’ＶＤ）法あるいは真空蒸着法で半導体基板上に堆積
した誘電体膜の界面準位密［會小さくする方法を提供す
ることｔ目的とする。The present invention eliminates the drawbacks of the prior art and provides chemical vapor deposition (chemical vapor deposition).
It is an object of the present invention to provide a method for reducing the interface state density of a dielectric film deposited on a semiconductor substrate by a 0'VD method or a vacuum evaporation method.
上記目的１−＊成するための本発明の基本的な榔ＷＬは
、半導体基１＃ｌまたは半導体膜の上面または下面ある
いは両面には、化学蒸着法（ＣＶＤ）あるいは真空蒸着
法等で堆積され次誘電体談のいずれかの表面から光線を
照射することをｌＦＩｗｌとする。The basic WL of the present invention for achieving the above object 1-* is deposited on the top surface, bottom surface, or both surfaces of the semiconductor substrate 1#l or the semiconductor film by chemical vapor deposition (CVD), vacuum evaporation, etc. The irradiation of a light beam from any surface of the dielectric material is defined as lFIwl.
以下、本発明を実施例にそって詳細に説明する。Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、日１ウェーハ上にモノ７ランの熱分解により４０
℃で１１７１％ｏＢ１０１膜を形成し、酸素ガス雰囲気
の石英管中に該試料を設置し、ａ１Ｏ＠ｍＨ面から波長
１０μ溝程度の光線を出すランプで光照射１ｉ１０秒程
度行ない、８１０１とｓｌの界面を少なくとも１２００
膜程度に瞬時加熱すると、当初８１とａ１ｏｍ界面の界
面単位密度がＩ Ｘ １０”／−以上あったものが、５
Ｘ １０Ｓ＠／ｊに低減することができる。Currently, 40
A 1171% oB101 film was formed at ℃, the sample was placed in a quartz tube in an oxygen gas atmosphere, and light irradiation was carried out for about 10 seconds using a lamp that emits a light beam with a wavelength of about 10 μ from the a1O@mH surface. The interface is at least 1200
When instantaneously heated to the level of a film, the interface unit density at the interface between 81 and a1om was I
It can be reduced to X 10S@/j.
第１図は、前記光照射法の概略を示し穴もので、１Ｆｉ
石英管、２は試料台、Ｓは８１ウエーハ、４はＯＶＤ・
８１０３膜、５はランプ、６はガス導入口である。FIG. 1 shows an outline of the light irradiation method and is a hole type.
Quartz tube, 2 is sample stage, S is 81 wafer, 4 is OVD.
8103 membrane, 5 is a lamp, and 6 is a gas inlet.
さらに、Ｂ１ウェーハの両面ＫＯＶＤ＠８１０諺膜管形
成した場合には、Ｂ１基重そのものは赤外線に対し透明
なため、上面８１０．と８１および下面８１０ｓと８１
の界面は共°に加熱され、界面単位密［１下げることが
できる。Furthermore, when forming a double-sided KOVD@810 film tube on the B1 wafer, the top surface 810. and 81 and bottom surface 810s and 81
The interfaces of are heated together, and the interfacial unit density [1] can be lowered.
さらに、照射光の波長が短かい場合には、８１のごく表
面を光加熱することとなり、やはり界面準位密ＩＩは低
減できる。Furthermore, if the wavelength of the irradiation light is short, the very surface of 81 will be optically heated, and the interface state density II can be reduced as well.
さらに、光源として炭酸ガス拳レーザーやカーボンΦに
一グーによる赤外線放射光を用いることもできる。Further, as a light source, a carbon dioxide gas fist laser or infrared rays emitted from carbon Φ can also be used.
さらに１光照射にパルス状で、且つ＋１秒程区の短時間
照射でも同等の効果がある。Furthermore, the same effect can be obtained even when irradiating one light in a pulsed manner and irradiating for a short period of about +1 second.
以上の如く、光照射アニールにより堆積誘電体膜の界面
準位密度が小さくできることにより、半導体装置製造が
簡便になったり、ｅｌや化合物等の低融点半導体基板上
への誘電体膜パッジブイ７シヨンが、安定にかつ容易に
、可能となる効果がある。As described above, the interface state density of the deposited dielectric film can be reduced by light irradiation annealing, which simplifies the manufacturing of semiconductor devices and makes it easier to apply dielectric films onto low-melting point semiconductor substrates such as EL and compounds. This has the effect of making it possible stably and easily.
第１図は、本発明による光子ニール処理法の一実施例を
簡単に示しｋものである。
１・・・石英管 ２・・・支持台Ｓ・・・
８１ウエーハ ４・・・誘電体膜５・・・光 源
６・・・ガス導入口以上FIG. 1 briefly shows one embodiment of the photon anneal processing method according to the present invention. 1...Quartz tube 2...Support stand S...
81 wafer 4...Dielectric film 5...Light source 6...Gas inlet or above
Claims (1)
両面には、化学蒸着法あるいは真空蒸着法等で堆積され
７’ｊＳ ｉ Ｏｓ膜あるいは８１１１ｉ４膜等の誘電
体膜等が形成され、該誘電体膜のいずれかの！ＩＩ向か
ら紫外線、可視光線あるいは赤外線等の光線ｔ−１０秒
以内の瞬時照射を行なうことを％黴とする半導体装置の
製造方法。In the semiconductor substrate, a dielectric film such as a 7'jSiOs film or an 8111i4 film is formed on the upper surface, the lower surface, or both surfaces of the semiconductor film by a chemical vapor deposition method, a vacuum evaporation method, etc. One of the membranes! A method of manufacturing a semiconductor device which involves instantaneous irradiation of ultraviolet light, visible light, infrared light, etc. within t-10 seconds from the II direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19786881A JPS5898933A (en) | 1981-12-09 | 1981-12-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19786881A JPS5898933A (en) | 1981-12-09 | 1981-12-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5898933A true JPS5898933A (en) | 1983-06-13 |
Family
ID=16381662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19786881A Pending JPS5898933A (en) | 1981-12-09 | 1981-12-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898933A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6142146A (en) * | 1984-07-30 | 1986-02-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of treating wafer |
| US5387546A (en) * | 1992-06-22 | 1995-02-07 | Canon Sales Co., Inc. | Method for manufacturing a semiconductor device |
| JPH07321061A (en) * | 1994-10-03 | 1995-12-08 | Sony Corp | Manufacture of semiconductor device |
| US6168980B1 (en) | 1992-08-27 | 2001-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123133A (en) * | 1979-03-16 | 1980-09-22 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
-
1981
- 1981-12-09 JP JP19786881A patent/JPS5898933A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123133A (en) * | 1979-03-16 | 1980-09-22 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6142146A (en) * | 1984-07-30 | 1986-02-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of treating wafer |
| JPH0317373B2 (en) * | 1984-07-30 | 1991-03-07 | Intaanashonaru Bijinesu Mashiinzu Corp | |
| US5387546A (en) * | 1992-06-22 | 1995-02-07 | Canon Sales Co., Inc. | Method for manufacturing a semiconductor device |
| US6168980B1 (en) | 1992-08-27 | 2001-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| JPH07321061A (en) * | 1994-10-03 | 1995-12-08 | Sony Corp | Manufacture of semiconductor device |
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