JPH0430519A - Treating apparatus of surface of substrate - Google Patents

Abstract

PURPOSE:To give a substantially uniform energy density distribution on the surface of a substrate by a construction wherein a buffer plate giving correction to energy applied to one main surface of the substrate to be subjected to surface treatment is disposed between the one main surface of the substrate and an energy radiation source. CONSTITUTION:A reaction vessel 1 is made of stainless steel and a surface treatment gas introduction port 2 and an exhaust port 3 are formed in the opposite end thereof, while a glass window 1a is fitted in the upper part thereof. A substrate 5 to be subjected to surface treatment is mounted on a substrate holder 4 located in the central part inside the reaction vessel 1. Energy is applied to one main surface of the substrate 5 through the glass window 1a from an energy radiation source 6 of an ultraviolet light source or an infrared light source disposed outside the reaction vessel 1. A buffer plate 7 is disposed between the glass window 1a and the one main surface of the substrate 5, so as to give a change to the distribution of the energy applied to the one main surface of the substrate 5. The buffer plate 7 is provided with a distributed minute indentation 10 for scattering the energy in accordance with the distribution of the incident energy, so that the distribution of the transmitted energy be uniform substantially within one main surface of the substrate 5.

Description

[Detailed Description of the Invention] [Summary] This invention relates to a substrate surface processing apparatus, particularly a semiconductor substrate surface processing apparatus using a dry process, in which the temperature distribution within the surface of the substrate to be processed is made uniform in order to uniformly process the substrate surface. The purpose of the present invention is to provide a substrate surface treatment apparatus equipped with a reaction vessel that accommodates a substrate to be surface treated and is equipped with two surface treatment gas inlets and an exhaust port, and a an energy radiation source that irradiates the entire surface of the substrate with energy through a transparent portion; and a buffer plate that is disposed between the entire surface of the substrate and the energy radiation source and corrects the energy irradiated to the entire surface of the substrate. The substrate surface treatment apparatus is constructed by a substrate surface processing apparatus having

Further, the substrate surface processing apparatus is configured such that the energy radiation source is an ultraviolet light source or an infrared light source.

Further, the buffer plate has a thickness distribution according to the incident energy distribution, or has a fine unevenness distribution that scatters energy according to the incident energy distribution, or has an energy distribution according to the incident energy distribution. The substrate surface treatment apparatus has an absorbing film in a large portion of the substrate, and the transmitted energy distribution is approximately -like over the lifetime of the substrate.

[Industrial application field]

The present invention relates to a substrate surface treatment apparatus, and more particularly to a semiconductor substrate surface treatment apparatus using a dry process.

In the manufacture of large-scale integrated circuits (LSI), the semiconductor substrate cleaning process plays an extremely important role.

In recent years, with the diversification of LSI manufacturing processes, there has been a strong desire for a dry process for substrate surface treatment including substrate cleaning.

[Conventional technology]

Recently, as a dry cleaning technology for the surface of semiconductor substrates,
There is a technique that uses active halogen species to thinly etch the surface of a semiconductor substrate and at the same time remove contaminants such as heavy metal elements and alkali elements from the surface in a vapor phase.

FIG. 6 is a diagram for explaining a conventional example of a substrate surface treatment apparatus used in this dry cleaning technique, in which 1 is a reaction vessel;
Ia is a glass window, 2 is a surface treatment gas inlet, 3 is an exhaust port
．． 4 is a substrate holder; 5 is a substrate 6 is an energy radiation source;
6a represents a lamp.

Halogen gas is introduced from the surface treatment gas inlet 2 into the reaction vessel 1 containing the substrate 5 to be surface treated, and an energy source placed outside is used to promote the generation of halogen active species and the reaction on the surface of the substrate 5. Energy is irradiated from the radiation source 6 onto the surface of the substrate 5.

The energy radiation source 6 is, for example, an ultraviolet light source or an infrared light source.

However, the energy radiation source 6 usually has a non-uniform energy distribution, and for example, the arrangement of the lamp 6a, the flatness of the glass window 1a, etc. sensitively affect the energy density distribution on the surface of the substrate 5.

If the energy density distribution on the surface of the substrate 5 is non-uniform, a problem arises in that the temperature becomes non-uniform and the reaction involved in the second surface treatment becomes non-uniform.

[Problems to be Solved by the Invention] In view of the above-mentioned problems, the present invention corrects the non-uniform energy density distribution irradiated from the energy radiation source to the substrate so that almost - It is an object of the present invention to provide a substrate surface treatment apparatus equipped with a means for providing various energy density distributions.

[Means to solve the problem]

The above-mentioned problems are as follows: (1) A reaction vessel 1 containing a substrate 5 to be surface-treated and equipped with a surface treatment gas inlet 2 and an exhaust port 3; an energy radiation source 6 for irradiating energy onto the entire surface of the substrate 5; and a buffer disposed between the entire surface of the substrate 5 and the energy radiation source 6 for correcting the energy irradiated onto the entire surface of the substrate 5. The problem is solved by a substrate surface treatment apparatus having a plate 7.

Further, the present invention is solved by a substrate surface processing apparatus in which the energy radiation source 6 is an ultraviolet light source or an infrared light source.

Further, the buffer plate 7 has a thickness distribution depending on the incident energy distribution, and the problem is solved by a substrate surface treatment apparatus in which the transmitted energy distribution is substantially uniform within the entire surface of the substrate 5.

Further, the buffer plate 7 has a distribution of fine unevenness 10 that scatters energy according to the incident energy distribution, and the substrate surface treatment apparatus is used so that the transmitted energy distribution is almost uniform within the entire surface of the substrate 5. resolved.

Further, the buffer plate 7 has an absorbing film 11 at a portion where energy is large according to the incident energy distribution, and the transmitted energy distribution is almost uniform within the entire surface of the substrate 5. Ru.

[Effect]

In the present invention, a buffer plate 7 is disposed between the entire surface of the substrate 5 to be subjected to surface treatment and the energy radiating source 6, for correcting the energy irradiated onto the entire surface of the substrate 5. The buffer plate 7 is designed according to the energy distribution within the lifetime of the substrate 5 when there is no buffer plate 7, and by adding the buffer plate 7, the transmitted energy distribution is almost uniform within the lifetime of the substrate 5. You can make it happen.

For the buffer plate 7, a material with a relatively large absorption coefficient for incident energy is selected, and the thickness is changed according to the incident energy intensity distribution.

It is possible to make the transmitted energy distribution substantially uniform throughout the life of the substrate 5.

Alternatively, a transparent plate such as a quartz plate may be used as the buffer plate 7, and fine irregularities may be formed in areas where a large amount of incident energy is received to scatter the energy, or an absorbing film may be added to such areas. In this way, the transmitted energy distribution can be made substantially uniform within the entire surface of the substrate 5.

〔Example〕

FIG. 1 is a diagram for explaining an embodiment of the substrate surface treatment apparatus, where 1 is a reaction vessel and la is a glass window.

2 is a surface treatment gas introduction port, 3 is an exhaust port, 4 is a substrate holder, 5 is a substrate, 6 is an energy radiation source, 6j is a lamp, 7
represents a buffer plate.

The reaction container 1 is made of stainless steel, for example, and has a surface treatment gas inlet 2 and an exhaust port 3 formed at both ends, and a glass window 1a fitted in the upper part.

A substrate 5 to be surface-treated is mounted on a substrate holder 4 at the center inside the reaction vessel 1 .

Energy is irradiated from an energy radiation source 6 placed outside the reaction vessel 1 onto one main surface of the substrate 5 through the glass window 1a. A buffer plate 7 is arranged between the glass window 1a and one main surface of the substrate 5.

The distribution of energy irradiated onto one main surface of the substrate 5 is changed.

The energy radiation source 6 is, for example, an ultraviolet light source, and the lamp 6a is, for example, a high-pressure mercury lamp.

The energy radiation source 6 is also an infrared light source and includes a lamp 6a.
is an infrared lamp, for example.

As an example of substrate surface treatment, dry cleaning treatment on the surface of an St substrate will be described.

An 8-inch diameter Si substrate 5 is mounted on the substrate holder 4. The buffer plate 7 is made of a quartz plate having a thickness of III, and is set (2) by appropriate means so that the plate surface is parallel to the surface of the substrate to be processed at a distance of 5 mm or more.

Introduce chlorine gas from surface treatment gas inlet 2.

The pressure inside the reaction vessel 1 is adjusted to a chlorine pressure of 5 to 100 Torr. A high pressure mercury lamp is used as the energy radiation source 6,
The Si substrate 5 is irradiated with ultraviolet light through the glass window 1a and the buffer plate 7.

FIG. 2 is a perspective view showing a first embodiment of the buffer plate.

9 represents a quartz plate, and 10 represents minute irregularities.

The fine irregularities 10 are optical scratches that scatter incident light, and are formed directly under the high-pressure mercury lamp in a portion where the light intensity is high, and are adjusted so that the light transmittance is about 80%.

FIG. 5 shows the irradiation energy density distribution within the 5-plane of the Si substrate. In the embodiment using the above-mentioned buffer plate 7.

The variation in the irradiation energy density distribution within the 5 planes of the Si substrate is 3
% or less. On the other hand, in the conventional example without the buffer plate 7, 2
Fluctuations in the irradiation energy density distribution of approximately 0% were observed.

FIG. 3 is a perspective view showing a second embodiment of the buffer plate.

Reference numeral 9 denotes a quartz plate, and reference numeral 11 denotes an absorbing film, which represents a silicon nitride film. In this example, the absorbing film is provided in a portion directly under a high-pressure mercury lamp where the light intensity is high, and the thickness of the silicon nitride film 11 is 0.5 μm. It is.

By using such a buffer plate, the irradiation energy density distribution within the plane of the Si substrate 5 can be made uniform.

FIG. 4 is a perspective view showing a third embodiment of the buffer plate, and 8 is made of Si.
Represents a crystal plate. This example is effective when an infrared light source is used as the energy radiation source 6, and in order to correct the amount of infrared rays irradiated onto the Si substrate 5, a Si crystal plate is used as a buffer plate.

The thick portion 8a of the Si crystal plate 8 is located directly under the infrared lamp and receives high infrared irradiation intensity, and the thin portion 8b is the other portion. For example, the thickness of the thick part is 1 mm,
The thickness of the thin portion is, for example, 0.2 mm, and by using such a buffer plate, the infrared ray irradiation energy distribution within the entire surface of the substrate 5 can be made uniform.

Since the irradiation energy density within the entire surface of the Si substrate 5 to be surface-treated is uniform, the temperature distribution is also uniform, making it possible to perform uniform surface treatment.

〔Effect of the invention〕

As explained above, according to the two aspects of the present invention, the surface treatment of a semiconductor substrate can be performed uniformly over the entire surface of the substrate by a dry process. For example, dry cleaning and dry etching can be performed uniformly.

The present invention is highly effective in converting the LSI manufacturing process into a dry process.

[Brief explanation of drawings]

Figure 1 is an example of a substrate surface treatment device. FIG. 2 shows the first embodiment of the buffer plate. FIG. 3 shows a second embodiment of the buffer plate. FIG. 4 shows a third embodiment of the buffer plate. Figure 5 shows the irradiation energy density distribution. Figure 6 shows a conventional example of substrate surface treatment equipment. It is. In fig. l is a reaction vessel. 3 is the exhaust port. 4 is a board holder. 5 is a substrate, which is a Si substrate. 6 is a heating source. 6a is a lamp. 7 is a buffer plate. 8 is a Si crystal plate. 8a is the thick part. 8b! , the thin part. 9 is a quartz plate. IO has minute irregularities. 11 is an absorption film, which is a silicon nitride film. 6 Ekiru Earth Radiation; Hara Example of % plate surface suspension device Silence 1 figure No. figure No. figure First 4 figures 1F within the base surface Figure 5 Conventional example of substrate surface E-processing equipment Figure 6

Claims (1)

[Scope of Claims] [1] A reaction vessel (1) containing a substrate (5) to be surface treated and equipped with a surface treatment gas inlet (2) and an exhaust port (3)
and arranged outside the reaction vessel (1), the reaction vessel (1)
an energy radiation source (6) that irradiates energy to one main surface of the substrate (5) through the transparent part (1a) of the substrate (5); and an energy radiation source (6) arranged between the one main surface of the substrate (5) and the energy radiation source (6). and a buffer plate (7) for correcting the energy irradiated onto one main surface of the substrate (5). [2] The substrate surface treatment apparatus according to claim 1, wherein the energy radiation source (6) is an ultraviolet light source. [3] The substrate surface treatment apparatus according to claim 1, wherein the energy radiation source (6) is an infrared light source. [4] The buffer plate (7) has a thickness distribution according to the incident energy distribution, and the transmitted energy distribution is different from that of the substrate (
5) The substrate surface treatment apparatus according to claim 1, wherein the surface treatment is substantially uniform within one main surface. [5] The buffer plate (7) has a distribution of fine unevenness (10) that scatters energy according to the incident energy distribution, and the transmitted energy distribution is almost uniform within one main surface of the substrate (5). 2. The substrate surface treatment apparatus according to claim 1, wherein the substrate surface treatment apparatus has the following characteristics. [6] The buffer plate (7) has an absorption film (11) in a portion where energy is large according to the incident energy distribution,
2. The substrate surface treatment apparatus according to claim 1, wherein the transmitted energy distribution is substantially uniform within one main surface of the substrate (5).