JPH06244159A - Light-excited gas reactor - Google Patents
Light-excited gas reactorInfo
- Publication number
- JPH06244159A JPH06244159A JP2937393A JP2937393A JPH06244159A JP H06244159 A JPH06244159 A JP H06244159A JP 2937393 A JP2937393 A JP 2937393A JP 2937393 A JP2937393 A JP 2937393A JP H06244159 A JPH06244159 A JP H06244159A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- light
- excited
- treated
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光によって励起された
活性ガスを被処理物と反応させて除去する場合や、光に
よって合成された物質を被処理物上に生成する場合、特
に、半導体装置製造過程でのウェハ上の不要となったレ
ジスト等の有機物除去や無機物の除去,ウェハのドライ
洗浄,液晶基板の洗浄やレジスト除去等に用いて好適な
光励起ガス反応装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is particularly applicable to the case where an active gas excited by light is reacted with an object to be removed and a substance synthesized by light is generated on the object to be treated, particularly to a semiconductor. The present invention relates to a photoexcited gas reaction device suitable for removing organic substances and inorganic substances such as unnecessary resist on a wafer in a device manufacturing process, dry cleaning of a wafer, cleaning of a liquid crystal substrate and resist removal.
【0002】[0002]
【従来の技術】従来の光励起プロセスでは、例えば米国
特許第4,885,047 号明細書に示されているように、励起
光が直接被処理物に照射される方式であった。このた
め、被処理物の製造プロセスの過程によって、或いは被
処理物の種類によって、照射される紫外線のエネルギに
よって被処理物に損傷を与える場合があった。2. Description of the Related Art In a conventional photoexcitation process, as shown in, for example, U.S. Pat. No. 4,885,047, an excitation light is directly irradiated onto an object to be processed. Therefore, depending on the process of manufacturing the object to be processed or the type of the object to be processed, the energy of the applied ultraviolet rays may damage the object to be processed.
【0003】[0003]
【発明が解決しようとする課題】本発明が解決しようと
する課題は、励起光の照射によって被処理物に損傷を与
えないようにすることにある。The problem to be solved by the present invention is to prevent damage to the object to be processed by the irradiation of excitation light.
【0004】[0004]
【課題を解決するための手段】本発明は、上記の課題を
解決するため、光によりガスを励起する過程と励起ガス
を輸送する過程と励起ガスが被処理物と反応する過程と
の間に光を遮る手段を設けることによって達成される。In order to solve the above-mentioned problems, the present invention is provided between a process of exciting a gas by light, a process of transporting the excited gas, and a process of reacting the excited gas with an object to be processed. This is achieved by providing means for blocking the light.
【0005】[0005]
【作用】反応ガスの励起は、光を透過する容器の中に流
れているガスに光照射するか光源の周りにガスを流すこ
とによって行われる。励起された活性ガスは、輸送過程
を経て被処理物のある処理室に導入する。励起光は、励
起ガスの輸送過程で輸送過程を曲げたり、光を透過しな
い材料で遮蔽体を構成し、被処理物表面に光が到達しな
いようにするため、光エネルギによる被処理物の損傷を
無くすことが出来る。The reaction gas is excited by irradiating the gas flowing in the light transmitting container with light or flowing the gas around the light source. The excited active gas is introduced into the processing chamber containing the object to be processed through the transportation process. Excitation light bends the transportation process of the excitation gas and forms a shield with a material that does not transmit light to prevent the light from reaching the surface of the object to be treated, so that the object to be treated is damaged by light energy. Can be eliminated.
【0006】[0006]
【実施例】まず図1の装置で、光源3は紫外線光源を表
わしており、具体的には低圧水銀放電灯である。反応の
原料ガスは、供給管1によって紫外線を透過する石英ガ
ラス等からなる光励起槽2に導入されて光源3によって
励起される。励起された活性ガスは、光を透過しない、
例えば、アルミニウムの板5に設けたガス通過孔6を通
して被処理物7の表面に供給される。ガス通過孔6は曲
がりくねった構造となっているために光を透過しない。
被処理物7として半導体装置の試験素子をおき、反応ガ
スにオゾンを用いて被処理物7上のレジストを除去した
後の電気的試験結果では、損傷を示す電気量の変化が認
められなかった。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, in the apparatus shown in FIG. 1, the light source 3 represents an ultraviolet light source, specifically, a low pressure mercury discharge lamp. The raw material gas for the reaction is introduced by a supply pipe 1 into a photoexcitation tank 2 made of quartz glass or the like that transmits ultraviolet rays and excited by a light source 3. The excited active gas does not transmit light,
For example, it is supplied to the surface of the object 7 to be processed through gas passage holes 6 provided in the aluminum plate 5. Since the gas passage hole 6 has a meandering structure, it does not transmit light.
A test element of a semiconductor device was placed as the object to be processed 7, and the electrical test result after removing the resist on the object to be processed 7 by using ozone as a reaction gas showed no change in the amount of electricity indicating damage. ..
【0007】ここで、上記アルミニウムの板5を紫外線
透過性である透明石英に変えて同様の電気的試験を行う
と損傷を示す電気量の変化がみとめられた。Here, when the above-mentioned aluminum plate 5 was replaced with transparent quartz which is transparent to ultraviolet rays and a similar electrical test was conducted, a change in the amount of electricity showing damage was found.
【0008】他の実施例について図2で説明する。光源
3の外側にガスを通すガラス管14を設け、原料ガスを
供給管11より導入し、光源13とガラス管14との間
の光励起槽12でガスは励起されて曲がったガス通過管
16を介して被処理物7の表面に供給される。光源3と
被処理物7の間には光を透過しない金属の板15を配し
ているので励起光は、被処理物7に到達しない。Another embodiment will be described with reference to FIG. A glass tube 14 for passing gas is provided outside the light source 3, a raw material gas is introduced from a supply tube 11, and a gas is excited in a photoexcitation tank 12 between the light source 13 and the glass tube 14 to form a bent gas passage tube 16. It is supplied to the surface of the object 7 to be processed. Since the metal plate 15 that does not transmit light is arranged between the light source 3 and the object to be processed 7, the excitation light does not reach the object to be processed 7.
【0009】図3は、光源23と光励起槽22との関係
の別の実施例を示すものである。光励起槽22は、二重
の石英管より構成されている。光源3が、交換出来る構
造としたものである。ガス通過管26は、例えば、図2
に示す様に被処理物7の表面に導き、被処理物7と光源
3間に光を透過しない板を配置する。FIG. 3 shows another embodiment of the relationship between the light source 23 and the photoexcitation tank 22. The photoexcitation tank 22 is composed of a double quartz tube. The light source 3 has a replaceable structure. The gas passage pipe 26 is, for example, as shown in FIG.
As shown in FIG. 3, a plate that guides the surface of the object to be processed 7 and does not transmit light is arranged between the object to be processed 7 and the light source 3.
【0010】図4は、別の実施例を示すもので光源33
の外周辺を励起槽32とし励起ガスをスリット状のガス
通過管36を介して被処理物37の表面にスリツト状の
吹きだし口より供給する。ガス通過管36を光を透過し
ない金属材料で構成するので光源33の光は、被処理物
7の表面に到達しない。FIG. 4 shows another embodiment of the light source 33.
The outer periphery is used as an excitation tank 32, and the excitation gas is supplied to the surface of the object to be processed 37 from a slit-shaped outlet through a slit-shaped gas passage pipe 36. Since the gas passage tube 36 is made of a metal material that does not transmit light, the light of the light source 33 does not reach the surface of the object to be processed 7.
【0011】励起ガスの原料ガスにフッ素,塩素を含み
紫外線で分解励起した活性なフッ素,塩素原子を生成す
る方法によって被処理物上の無機物を蒸気圧の高いハロ
ゲン化合物にして除去する場合、或いはシリコンの化合
物を光分解しさらにシリコンと酸素を反応させてシリコ
ン酸化膜を形成するいわゆる、光CVD等にも本発明は
適用出来る。When the inorganic material on the object to be treated is removed as a halogen compound having a high vapor pressure by the method of generating active fluorine and chlorine atoms which include fluorine and chlorine in the source gas of the excitation gas and are decomposed and excited by ultraviolet rays, or The present invention can also be applied to so-called photo-CVD or the like in which a silicon compound is photolyzed and silicon and oxygen are reacted to form a silicon oxide film.
【0012】[0012]
【発明の効果】本発明によれば、光を、直接、被処理物
の表面に到達させずに光励起反応を行うので、光のもつ
高エネルギ照射による被処理物の損傷のない光励起ガス
反応ができる。According to the present invention, the photoexcited reaction is carried out without directly irradiating the surface of the object to be treated with light, so that the photoexcited gas reaction without damaging the object to be treated due to the high energy irradiation of light can be performed. it can.
【図1】本発明の一実施例の説明図。FIG. 1 is an explanatory diagram of an embodiment of the present invention.
【図2】本発明の第二の実施例の説明図。FIG. 2 is an explanatory diagram of a second embodiment of the present invention.
【図3】本発明の第三の実施例の説明図。FIG. 3 is an explanatory diagram of a third embodiment of the present invention.
【図4】本発明の第四の実施例の説明図。FIG. 4 is an explanatory diagram of a fourth embodiment of the present invention.
1…ガス供給管、2…光励起槽、3…光源、5…遮光
板、6…ガス通過孔、7…被処理物。DESCRIPTION OF SYMBOLS 1 ... Gas supply pipe, 2 ... Photoexcitation tank, 3 ... Light source, 5 ... Light-shielding plate, 6 ... Gas passage hole, 7 ... Processing object.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/027 21/31 B // H01L 21/304 341 D 8832−4M ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI technical display location H01L 21/027 21/31 B // H01L 21/304 341 D 8832-4M
Claims (2)
スを輸送する手段と前記励起ガスと被処理物を反応せし
める手段を有し、前記光源と前記被処理物の間に光を遮
る手段を設けたことを特徴とする光励起ガス反応装置。1. A means for exciting a gas by a light source, a means for transporting the excited gas, and a means for reacting the excited gas with an object to be processed, and means for blocking light between the light source and the object to be processed. A photoexcited gas reaction device provided.
は、光源が紫外線を発するものであって、ガスと光源部
との境界が紫外線透過率の優れた材料からなる光励起ガ
ス反応装置。2. The photoexcited gas reaction device according to claim 1, wherein the means for exciting the gas is such that the light source emits ultraviolet light, and the boundary between the gas and the light source part is made of a material having an excellent ultraviolet transmittance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2937393A JPH06244159A (en) | 1993-02-18 | 1993-02-18 | Light-excited gas reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2937393A JPH06244159A (en) | 1993-02-18 | 1993-02-18 | Light-excited gas reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06244159A true JPH06244159A (en) | 1994-09-02 |
Family
ID=12274347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2937393A Pending JPH06244159A (en) | 1993-02-18 | 1993-02-18 | Light-excited gas reactor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06244159A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0704552A1 (en) * | 1994-09-28 | 1996-04-03 | Sony Corporation | Plasma processing method and plasma generator |
JP2002083803A (en) * | 2000-09-07 | 2002-03-22 | Yac Co Ltd | Dry processing device such as etching device and ashing device |
JP2003045862A (en) * | 2001-08-01 | 2003-02-14 | Tokyo Electron Ltd | Optical stimulation film forming device and method |
JP2005158796A (en) * | 2003-11-20 | 2005-06-16 | Ushio Inc | Processing equipment |
KR100621788B1 (en) * | 2005-04-01 | 2006-09-19 | 두산디앤디 주식회사 | Ozone asher device |
JP2009224456A (en) * | 2008-03-14 | 2009-10-01 | National Institute Of Advanced Industrial & Technology | Oxide thin-film forming apparatus |
-
1993
- 1993-02-18 JP JP2937393A patent/JPH06244159A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0704552A1 (en) * | 1994-09-28 | 1996-04-03 | Sony Corporation | Plasma processing method and plasma generator |
US5637180A (en) * | 1994-09-28 | 1997-06-10 | Sony Corporation | Plasma processing method and plasma generator |
JP2002083803A (en) * | 2000-09-07 | 2002-03-22 | Yac Co Ltd | Dry processing device such as etching device and ashing device |
JP2003045862A (en) * | 2001-08-01 | 2003-02-14 | Tokyo Electron Ltd | Optical stimulation film forming device and method |
JP4712240B2 (en) * | 2001-08-01 | 2011-06-29 | 東京エレクトロン株式会社 | Photo-excited film forming apparatus and photo-excited film forming method |
JP2005158796A (en) * | 2003-11-20 | 2005-06-16 | Ushio Inc | Processing equipment |
KR100621788B1 (en) * | 2005-04-01 | 2006-09-19 | 두산디앤디 주식회사 | Ozone asher device |
JP2009224456A (en) * | 2008-03-14 | 2009-10-01 | National Institute Of Advanced Industrial & Technology | Oxide thin-film forming apparatus |
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