JPS6415983A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6415983A JPS6415983A JP17269287A JP17269287A JPS6415983A JP S6415983 A JPS6415983 A JP S6415983A JP 17269287 A JP17269287 A JP 17269287A JP 17269287 A JP17269287 A JP 17269287A JP S6415983 A JPS6415983 A JP S6415983A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer
- forming
- insulator
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 11
- 239000012212 insulator Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To obtain a TFT wherein effective and uniform H2 treatment of an active layer is enabled without necessitating other process, and high mobility and high speed driving are possible, by a method wherein the active layer on an insulating layer is formed by diffusing hydrogen in the insulating layer by heating at the time of forming a transistor. CONSTITUTION:On a substrate 1, the following are laminated in order; an insulating layer 2 containing H, an active layer 3, a gate oxide film 4 and a gate electrode 5. Then an interlayer insulating film 6 is stacked, and a metal wiring 7 is arranged to constitute a TFT. For the insulator layer 2 containing H, Si system insulator such as Si:N:H, SiC:H, SiN:H Si:O:H, etc., is used. Besides the above one, Al2O3 or B2O3 system insulator containing H or H atom as OH radical is preferably used. At the time of high temperature heating in the process of, e.g., forming the active layer 3, forming the gate oxide film 4, forming the gate electrode 5, etc., H in the insulator layer 2 containing H diffuses into the active layer 3, and passivate the active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17269287A JPS6415983A (en) | 1987-07-09 | 1987-07-09 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17269287A JPS6415983A (en) | 1987-07-09 | 1987-07-09 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415983A true JPS6415983A (en) | 1989-01-19 |
Family
ID=15946585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17269287A Pending JPS6415983A (en) | 1987-07-09 | 1987-07-09 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415983A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0395938A (en) * | 1989-09-07 | 1991-04-22 | Canon Inc | Manufacture of semiconductor device |
| US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
| US6884698B1 (en) | 1994-02-23 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with crystallization of amorphous silicon |
| JP2011124596A (en) * | 2011-02-01 | 2011-06-23 | Mitsubishi Electric Corp | Method of manufacturing semiconductor device |
-
1987
- 1987-07-09 JP JP17269287A patent/JPS6415983A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0395938A (en) * | 1989-09-07 | 1991-04-22 | Canon Inc | Manufacture of semiconductor device |
| US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
| US6884698B1 (en) | 1994-02-23 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with crystallization of amorphous silicon |
| JP2011124596A (en) * | 2011-02-01 | 2011-06-23 | Mitsubishi Electric Corp | Method of manufacturing semiconductor device |
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