JPS4996300A - - Google Patents

Info

Publication number
JPS4996300A
JPS4996300A JP843473A JP843473A JPS4996300A JP S4996300 A JPS4996300 A JP S4996300A JP 843473 A JP843473 A JP 843473A JP 843473 A JP843473 A JP 843473A JP S4996300 A JPS4996300 A JP S4996300A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP843473A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP843473A priority Critical patent/JPS4996300A/ja
Publication of JPS4996300A publication Critical patent/JPS4996300A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP843473A 1973-01-19 1973-01-19 Pending JPS4996300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP843473A JPS4996300A (en) 1973-01-19 1973-01-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP843473A JPS4996300A (en) 1973-01-19 1973-01-19

Publications (1)

Publication Number Publication Date
JPS4996300A true JPS4996300A (en) 1974-09-12

Family

ID=11693003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP843473A Pending JPS4996300A (en) 1973-01-19 1973-01-19

Country Status (1)

Country Link
JP (1) JPS4996300A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192330A (en) * 1982-05-06 1983-11-09 Oak Seisakusho:Kk Oxidation treating method for surface of silicon wafer
JPS6085531A (en) * 1983-10-17 1985-05-15 Sony Corp Formation of thin-film
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film
JPS61253870A (en) * 1985-05-07 1986-11-11 Hitachi Ltd Photovoltaic device
JPS6482634A (en) * 1987-09-25 1989-03-28 Nec Corp Manufacture of semiconductor device
US6319759B1 (en) * 1998-08-10 2001-11-20 International Business Machines Corporation Method for making oxide

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192330A (en) * 1982-05-06 1983-11-09 Oak Seisakusho:Kk Oxidation treating method for surface of silicon wafer
JPS6085531A (en) * 1983-10-17 1985-05-15 Sony Corp Formation of thin-film
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film
JPS61253870A (en) * 1985-05-07 1986-11-11 Hitachi Ltd Photovoltaic device
JPS6482634A (en) * 1987-09-25 1989-03-28 Nec Corp Manufacture of semiconductor device
US6319759B1 (en) * 1998-08-10 2001-11-20 International Business Machines Corporation Method for making oxide

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