JPS61253870A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS61253870A JPS61253870A JP60095437A JP9543785A JPS61253870A JP S61253870 A JPS61253870 A JP S61253870A JP 60095437 A JP60095437 A JP 60095437A JP 9543785 A JP9543785 A JP 9543785A JP S61253870 A JPS61253870 A JP S61253870A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- type layer
- layer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract 2
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 optical sensors Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はシリコン系薄膜半導体素子の構造及び製造方法
、詳しくは光電変換デバイスの構造及び製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to the structure and manufacturing method of a silicon-based thin film semiconductor element, and more particularly to the structure and manufacturing method of a photoelectric conversion device.
シリコン系薄膜半導体素子として、太陽電池。 Solar cells as silicon-based thin film semiconductor elements.
電子写真感光材、光センサ−、薄膜トランジスタ及び撮
像素子などがあり、薄膜半導体時に非晶質半導体薄膜の
応用が注目されている（日経エレクトロニクス、１９８
２年２月１５日号、第１．２２頁参照）。この薄膜は組
成を自由に選択できるため可視域から赤外域迄の広い範
囲で感度を有し、また高い吸収係数を有するため必要な
膜厚はミクロン程度で良く、ｎ形やｐ形の価電子制御も
行えるなどの特長を持っている。There are electrophotographic photosensitive materials, optical sensors, thin film transistors, and imaging devices, and the application of amorphous semiconductor thin films to thin film semiconductors is attracting attention (Nikkei Electronics, 198
(See February 15, 2015 issue, page 1.22). Because the composition of this thin film can be freely selected, it has sensitivity in a wide range from the visible to the infrared region.It also has a high absorption coefficient, so the required film thickness is only about microns, and it has n-type and p-type valence electrons. It has features such as being able to be controlled.
かかる半導体薄膜の製造では、従来からグロー放電など
のプラズマ化学蒸着（ＣＶＤ）法が一般に用いられてい
た。このプラズマＣＶＤ法では、ＳｉＨ，などのグロー
放電によりプラズマを発生させガラスなどの基板上に半
導体膜を形成する。In the production of such semiconductor thin films, plasma chemical vapor deposition (CVD) methods such as glow discharge have been commonly used. In this plasma CVD method, a semiconductor film is formed on a substrate such as glass by generating plasma by glow discharge of SiH or the like.
例えば、透明導電膜を有するガラス基板上に、Ｂ、Ｈ，
を含有するＳｉＨ，−ＣＨ，系ガスを用いｐ形ＳｉＣ層
、ＳｉＨ４のみでｉ形Ｓｉ層及びＰＨ，を含有するＳｉ
Ｈ４を用いｎ形層を順次形成し、 ｐｉｎ型Ｓｉ薄膜半
導体素子を作製することができる。For example, B, H,
p-type SiC layer using SiH containing -CH, -CH, system gas, i-type Si layer using only SiH4, and Si containing PH.
By sequentially forming n-type layers using H4, a pin type Si thin film semiconductor device can be manufactured.
しかし、この種の半導体素子を太陽電池に適用した場合
、その光電変換効率は１０％と低く、発電用としては更
に高い効率の実現が望まれる。結晶型Ｓｉ太陽電池では
、最近１９％と高い効率が得られている。この様な高い
効率が得られた一つの原因として、素子表面を酸化して
不能態化（パッシベーション）したことが挙げられる。However, when this type of semiconductor element is applied to a solar cell, its photoelectric conversion efficiency is as low as 10%, and it is desired to achieve even higher efficiency for power generation. Crystalline Si solar cells have recently achieved efficiency as high as 19%. One of the reasons why such high efficiency was obtained is that the element surface was oxidized to make it inactive (passivation).
結晶型では、約８００℃の高温での素子表面の酸化工程
が採用されている。しかし、薄膜素子特に非晶質型素子
の場合、約５００’Ｃ以上の高温処理ではＨ脱離などの
構造変化が生じ半導体素子の性能が著しく低下してしま
う。For the crystal type, a process of oxidizing the element surface at a high temperature of about 800° C. is used. However, in the case of a thin film element, particularly an amorphous type element, high-temperature treatment at a temperature of about 500'C or higher causes structural changes such as H elimination, resulting in a significant deterioration in the performance of the semiconductor element.
本発明の目的は、かかる従来の問題点を解決できる光起
電力素子の構造及びその製造方法を提供することにある
。An object of the present invention is to provide a structure of a photovoltaic device and a method for manufacturing the same that can solve the conventional problems.
一般の薄膜半導体素子の不動態化膜として、酸化シリコ
ン、窒化シリコン、酸化窒化シリコンや酸化チタンなど
の使用が知られている。これらの不動態化膜を低温で形
成する方法としてプラズマＣＶＤ法、スパッター法や電
子ビーム蒸着法があるが１反応系内に高エネルギー粒子
を含むため、基板表面及び形成される膜に放射線損傷を
与える。It is known to use silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and the like as a passivation film for general thin-film semiconductor devices. Plasma CVD, sputtering, and electron beam evaporation methods are available to form these passivation films at low temperatures, but because each reaction system contains high-energy particles, they may cause radiation damage to the substrate surface and the formed film. give.
本発明では、かかる放射線損傷を防ぐため、光励起化学
反応法を用いる。光励起化学反応法は、紫外光等を用い
て化学反応を行わせ、低温で酸化シリコンなどの薄膜を
形成する方法である。In the present invention, a photoexcitation chemical reaction method is used to prevent such radiation damage. The photo-excited chemical reaction method is a method of forming a thin film of silicon oxide or the like at a low temperature by causing a chemical reaction using ultraviolet light or the like.
例えば、光励起法でＳｉｎ、膜を形成する時の反応は下
記の通りである。For example, the reaction when forming a film of Sin using a photoexcitation method is as follows.
０、＋ｈ ｖ （１８５ｎｍ） →２０ （”Ｐ）
・＝（１）ＳｉＨ，＋４０（”Ｐ） ４ＳｉＯ，
＋２Ｈ，０−（２）Ｓ ｉ＋ ２０ （” Ｐ ）
→Ｓ ｘ Ｏｘ ・・＊３）式（２）は０
ラジカルとＳｉＨ４の反応でＳｉｎ、が形成される場合
１式（３）は０ラジカルでＳｉ表面が酸化される場合で
ある。Ｓ ｉ Ｏ。0, +h v (185nm) →20 (”P)
・=(1)SiH,+40(”P)4SiO,
+2H,0-(2)S i+ 20 ("P)
→S x Ox...*3) Equation (2) is 0
When Si is formed by the reaction between radicals and SiH4, Equation 1 (3) is a case where the Si surface is oxidized by zero radicals. S i O.
以外の例えば窒化膜の場合０□の代わりにＮＨ。For example, in the case of a nitride film, use NH instead of 0□.
又は（ｃＨ２）ｉ を用いれば良い。他の膜桃えばＴ
ｉ Ｏ，の場合イソプロピルチタネートと０２を用いれ
ば良い。Or (cH2)i may be used. Other membranes are T
In the case of i O, isopropyl titanate and 02 may be used.
以下、本発明の実施例を第１図により説明する。 Embodiments of the present invention will be described below with reference to FIG.
基板１上に透明導電電極膜２を有するものを用い、Ｓ
ｉ Ｈ４を主ソースガスとするプラズマＣＶＤ法により
、ｐ形層３１、ｉ形層３２、ｎ形層３３を順次形成する
。プラズマＣＶＤ時の基板温度は２００℃〜３００℃に
保持して膜形成を行うと通常は非晶質Ｓｉ又はＳｉＣ層
が形成される。このシリコン層上に、光ＣＶＤ法を用い
約１００人厚さのＳｉｎ、を形成する。この際、基板温
度を３００℃とし、Ｈｇランプからの１８５ｎｍの紫外
光をＳｉＨ，−Ｎ、Ｏ系反応ガスに照射する。Using a substrate having a transparent conductive electrode film 2 on the substrate 1,
A p-type layer 31, an i-type layer 32, and an n-type layer 33 are sequentially formed by a plasma CVD method using iH4 as a main source gas. When film formation is performed while maintaining the substrate temperature at 200° C. to 300° C. during plasma CVD, an amorphous Si or SiC layer is usually formed. On this silicon layer, a Si layer having a thickness of approximately 100 nm is formed using a photo-CVD method. At this time, the substrate temperature is set to 300° C., and the SiH, —N, O-based reaction gas is irradiated with 185 nm ultraviolet light from an Hg lamp.
ＳｉＯ□膜形成後、Ｓ ｉ Ｏ，の１部に開孔部５を設
け、電極（例えば、ＡＱ）を蒸着し、開孔部５でｎ形Ｓ
ｉ層３３との低抵抗接触を得る。この方法で試作した太
陽電池では、特に開放電圧値に改善が見られた。After forming the SiO□ film, an opening 5 is provided in a part of the S
Obtain a low resistance contact with the i-layer 33. The solar cells prototyped using this method showed an improvement, especially in the open-circuit voltage value.
本発明によれば、薄膜半導体の表面パッシベーション特
性向上が得られた。更に、パッシベーション膜形成のた
め光ＣＶＤ法を採用することにより、従来プラズマなど
の中に存在する高エネルギー粒子による表面損傷を著し
く低減でき、良好な光起電力素子を作製できた。又、電
極６として光反射率の汚れたＡｇを被着すれば光の繰返
し利用による特性向上も期待されるなど本発明による実
用価値は高い。According to the present invention, improvement in surface passivation characteristics of a thin film semiconductor was obtained. Furthermore, by employing the photo-CVD method for forming the passivation film, surface damage caused by high-energy particles conventionally present in plasma etc. could be significantly reduced, and a good photovoltaic element could be produced. In addition, if Ag with a dirty light reflectance is deposited as the electrode 6, it is expected that the characteristics will be improved by repeated use of light, so the practical value of the present invention is high.
第１図は本発明の実施例に関する素子の断面図である。 FIG. 1 is a sectional view of an element related to an embodiment of the present invention.
Claims (1)
応ガスに紫外線を照射し、透明不動態化膜をシリコン薄
膜半導体素子表面に形成した光起電力素子。 ２、上記透明不動態化膜をシリコンを主要元素を含むも
のとする特許請求の範囲第１項記載の光起電力素子。[Scope of Claims] 1. A photovoltaic device in which a transparent passivation film is formed on the surface of a silicon thin film semiconductor element by irradiating ultraviolet rays to a reactive gas composed of a compound containing at least silicon. 2. The photovoltaic device according to claim 1, wherein the transparent passivation film contains silicon as a main element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095437A JPS61253870A (en) | 1985-05-07 | 1985-05-07 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095437A JPS61253870A (en) | 1985-05-07 | 1985-05-07 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61253870A true JPS61253870A (en) | 1986-11-11 |
Family
ID=14137673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60095437A Pending JPS61253870A (en) | 1985-05-07 | 1985-05-07 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61253870A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012216416A1 (en) * | 2012-03-05 | 2013-09-05 | Roth & Rau Ag | Process for the production of optimized solar cells |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996300A (en) * | 1973-01-19 | 1974-09-12 | ||
| JPS58212127A (en) * | 1982-06-03 | 1983-12-09 | Hitachi Ltd | Manufacture of silicon thin film semiconductor device |
| JPS5958819A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Formation of thin film |
| JPS59141278A (en) * | 1983-02-02 | 1984-08-13 | Fuji Xerox Co Ltd | Photoelectric conversion element and manufacture thereof |
| JPS59147435A (en) * | 1983-02-10 | 1984-08-23 | Mitsui Toatsu Chem Inc | Formation of silicon oxide film |
-
1985
- 1985-05-07 JP JP60095437A patent/JPS61253870A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996300A (en) * | 1973-01-19 | 1974-09-12 | ||
| JPS58212127A (en) * | 1982-06-03 | 1983-12-09 | Hitachi Ltd | Manufacture of silicon thin film semiconductor device |
| JPS5958819A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Formation of thin film |
| JPS59141278A (en) * | 1983-02-02 | 1984-08-13 | Fuji Xerox Co Ltd | Photoelectric conversion element and manufacture thereof |
| JPS59147435A (en) * | 1983-02-10 | 1984-08-23 | Mitsui Toatsu Chem Inc | Formation of silicon oxide film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012216416A1 (en) * | 2012-03-05 | 2013-09-05 | Roth & Rau Ag | Process for the production of optimized solar cells |
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