JP2001284619A - Phtovoltaic device - Google Patents
Phtovoltaic deviceInfo
- Publication number
- JP2001284619A JP2001284619A JP2000090562A JP2000090562A JP2001284619A JP 2001284619 A JP2001284619 A JP 2001284619A JP 2000090562 A JP2000090562 A JP 2000090562A JP 2000090562 A JP2000090562 A JP 2000090562A JP 2001284619 A JP2001284619 A JP 2001284619A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- microcrystalline
- microcrystalline silicon
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、微結晶シリコン
ゲルマニウム（μＣ−ＳｉＧｅ）を光活性層に用いた光
起電力素子に関する。The present invention relates to a photovoltaic device using microcrystalline silicon germanium (μC-SiGe) for a photoactive layer.
【０００２】[0002]
【従来の技術】従来、原料ガスのグロー放電分解や光Ｃ
ＶＤ法により形成される非晶質シリコン（以下、ａ−Ｓ
ｉと記す。）を主材料にした光起電力装置は、薄膜、大
面積化が容易という特長を持ち、低コスト光起電力装置
として期待されている。2. Description of the Related Art Conventionally, glow discharge decomposition of raw material gas and light C
Amorphous silicon (hereinafter a-S) formed by the VD method
Write i. The photovoltaic device using () as a main material has features that it can be easily formed into a thin film and has a large area, and is expected as a low-cost photovoltaic device.
【０００３】この種の光起電力装置の構造としては、ｐ
ｉｎ接合を有するｐｉｎ型ａ−Ｓｉ光起電力装置が一般
的である。図４はこのような光起電力装置の構造を示
し、ガラス基板２１上に、透明電極２２、ｐ型ａ−Ｓｉ
層２３、ｉ型ａ−Ｓｉ層２４、ｎ型ａ−Ｓｉ層２５、金
属電極２６を順次積層することにより作成される。この
光起電力装置は、ガラス基板２１を通して入射する光に
より光起電力が発生する。[0003] The structure of this type of photovoltaic device includes p
A pin-type a-Si photovoltaic device having an in-junction is common. FIG. 4 shows the structure of such a photovoltaic device, in which a transparent electrode 22 and a p-type a-Si
It is formed by sequentially laminating a layer 23, an i-type a-Si layer 24, an n-type a-Si layer 25, and a metal electrode 26. In this photovoltaic device, photovoltaic power is generated by light incident through the glass substrate 21.
【０００４】上記したａ−Ｓｉ光起電力装置は、光照射
後、光劣化が生じることが知られている。そこで、薄膜
で且つ光照射に対して安定性の高い材料として、微結晶
シリコンがあり、この微結晶シリコンを光活性層に用い
た光起電力装置が提案されている（例えば、特開平５−
１００５５号公報参照。）。この微結晶シリコンは微結
晶Ｓｉ相とａ−Ｓｉ相とが混在する薄膜である。It is known that the a-Si photovoltaic device described above undergoes photodegradation after light irradiation. Then, microcrystalline silicon is known as a material which is thin and has high stability to light irradiation, and a photovoltaic device using this microcrystalline silicon for a photoactive layer has been proposed (for example, Japanese Patent Application Laid-Open No. H05-205,052).
See No. 10055. ). This microcrystalline silicon is a thin film in which a microcrystalline Si phase and an a-Si phase are mixed.
【０００５】[0005]
【発明が解決しようとする課題】上記したように、非晶
質シリコン（Ｓｉ）系の半導体膜の持つ欠点である光劣
化を克服する技術として、微結晶シリコン（Ｓｉ）が注
目されているが、微結晶シリコンは非晶質シリコンに比
べ吸収係数が小さい。このため、光活性層に用いようと
すると、２μｍもしくはそれ以上の膜厚を要するため、
太陽電池の生産性を考えた場合、非常に速い成膜速度を
要求される。しかしながら、現状では良質な特性を維持
したままこのような成膜速度を達成することはできな
い。As described above, microcrystalline silicon (Si) has been attracting attention as a technique for overcoming the photodegradation which is a disadvantage of the amorphous silicon (Si) based semiconductor film. Microcrystalline silicon has a smaller absorption coefficient than amorphous silicon. For this reason, a film thickness of 2 μm or more is required for use in a photoactive layer.
Considering the productivity of the solar cell, a very high deposition rate is required. However, at present, such a film formation rate cannot be achieved while maintaining good quality characteristics.
【０００６】そこで、この発明者等は、微結晶シリコン
より光吸収係数が大きい微結晶シリコンゲルマニウム
（ＳｉＧｅ）を光活性層に用い、必要な光活性層の膜厚
を薄くすることで、従来の問題点を解決することを鋭意
検討した。問題解決には以下の２点が満足されなくては
ならない。Therefore, the inventors of the present invention used microcrystalline silicon germanium (SiGe) having a larger light absorption coefficient than microcrystalline silicon for the photoactive layer and reduced the required film thickness of the photoactive layer to obtain a conventional photoactive layer. We devoted ourselves to solving the problems. To solve the problem, the following two points must be satisfied.
【０００７】（１）活性層の膜厚を１μｍ以下にするた
めには少なくとも３倍程度の吸収係数が必要である。こ
のためには、微結晶シリコンゲルマニウム（ＳｉＧｅ）
の中のゲルマニウム（Ｇｅ）の組成比が２０％以上であ
る必要がある。(1) To reduce the thickness of the active layer to 1 μm or less, an absorption coefficient at least about three times is required. For this purpose, microcrystalline silicon germanium (SiGe)
The composition ratio of germanium (Ge) in the above needs to be 20% or more.
【０００８】（２）この時の成膜速度が極端に遅いと上
記利点が生かされないため、ある程度の成膜速度、例え
ば２Å／秒を維持しなければならない。(2) At this time, if the film forming speed is extremely low, the above advantage cannot be utilized, so that a certain film forming speed, for example, 2 ° / sec, must be maintained.
【０００９】この発明は、上記事情に鑑みなされたもの
にして、膜厚の薄い微結晶シリコン系半導体薄膜を光活
性層に用いた光起電力装置を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and has as its object to provide a photovoltaic device using a thin microcrystalline silicon-based semiconductor thin film for a photoactive layer.
【００１０】[0010]
【課題を解決するための手段】この発明は、ゲルマニウ
ムの組成比が２０％以上５０％以下の微結晶シリコンゲ
ルマニウムを光活性層として用い、且つその膜厚が１μ
ｍ以下であることを特徴とする。According to the present invention, microcrystalline silicon germanium having a composition ratio of germanium of 20% or more and 50% or less is used as a photoactive layer, and its film thickness is 1 μm.
m or less.
【００１１】前記微結晶シリコンゲルマニウムは、プラ
ズマＣＶＤで形成され、その際の成膜時の基板温度を２
００℃以上に設定するとよい。The microcrystalline silicon germanium is formed by plasma CVD, and the substrate temperature at the time of film formation is 2
The temperature is preferably set to 00 ° C. or higher.
【００１２】上記の構成によれば、膜厚の薄い微結晶シ
リコンゲルマニウムを光活性層に用いることができ、ス
ループットを大幅に向上させることができる。According to the above structure, microcrystalline silicon germanium having a small thickness can be used for the photoactive layer, and the throughput can be greatly improved.
【００１３】[0013]
【発明の実施の形態】以下、この発明の実施の形態につ
き図面を参照して説明する。この発明者等は上記した２
点を満足する条件を見出した。図１に従い膜厚が薄くて
も光活性層に用いることができる微結晶シリコンゲルマ
ニウム膜につきまず説明する。Embodiments of the present invention will be described below with reference to the drawings. The present inventors have discussed the above 2
A condition that satisfies the point was found. First, a microcrystalline silicon germanium film that can be used for a photoactive layer even if the film thickness is small will be described with reference to FIG.
【００１４】図１は、プラズマＣＶＤ法で微結晶シリコ
ンゲルマニウム（ＳｉＧｅ）膜を形成したときの非晶質
と微結晶の、水素希釈率（Ｈ2／ＳｉＨ4＋ＧｅＨ4）と
ゲルマン流量比（ＧｅＨ4／ＳｉＨ4＋ＧｅＨ4）に関す
る境界を各成膜温度に対して示したものである。この成
膜は、１３．５６ＭＨｚの平行平板型ＲＦプラズマＣＶ
Ｄを用いており、投入力電力は２００ｍＷ／cm2、圧力
は３９．９Ｐａである。FIG. 1 shows a hydrogen dilution ratio (H 2 / SiH 4 + GeH 4 ) and a germane flow ratio (GeH) of amorphous and microcrystals when a microcrystalline silicon germanium (SiGe) film is formed by a plasma CVD method. 4 / SiH 4 + GeH 4 ) are shown for each film forming temperature. This film is formed by a 13.56 MHz parallel plate RF plasma CV.
D, the input power is 200 mW / cm 2 , and the pressure is 39.9 Pa.
【００１５】通常微結晶シリコンを光活性層に用いた光
起電力素子は、２μｍ以上の膜厚を要するが、使用材料
量、スループット、素子の安定性等を考慮すると、０．
１〜０．７μｍが適当である。このためには、微結晶シ
リコンゲルマニウムのＧｅの組成比を２０〜５０％の範
囲にすることが望ましい。図１より、この範囲で組成比
を制御するためには、少なくとも２００℃以上の基板温
度が必要である。また、好ましくは２５０℃、さらに好
ましくは３００℃にあげた方が高い成膜速度が得られ
る。Normally, a photovoltaic element using microcrystalline silicon for the photoactive layer requires a film thickness of 2 μm or more. However, considering the amount of materials used, the throughput, the stability of the element, etc.
1 to 0.7 μm is appropriate. For this purpose, the Ge composition ratio of microcrystalline silicon germanium is desirably in the range of 20 to 50%. According to FIG. 1, in order to control the composition ratio in this range, a substrate temperature of at least 200 ° C. is required. A higher film forming rate can be obtained by raising the temperature to preferably 250 ° C., more preferably 300 ° C.
【００１６】この発明で得られた微結晶シリコンゲルマ
ニウム（ＳｉＧｅ）膜は２０Å以上の粒径のＳｉ、Ｇ
ｅ、ＳｉＧｅ結晶粒と非晶質部からなり、非晶質部分の
比率は１０％未満である。光吸収係数はそれぞれ８００
ｎｍで５０００ｃｍ-1、９００ｎｍで１５００ｃｍ-1、
１０００ｎｍで８００ｃｍ-1以上であり、これは微結晶
シリコンの値の３倍以上である。The microcrystalline silicon germanium (SiGe) film obtained by the present invention has a Si, G
e, composed of SiGe crystal grains and an amorphous portion, the ratio of the amorphous portion being less than 10%. The light absorption coefficient is 800
5000cm -1 in nm, 1500cm -1 at 900nm,
At 1000 nm, it is 800 cm -1 or more, which is three times or more the value of microcrystalline silicon.
【００１７】図２は上記した微結晶シリコンゲルマニウ
ム（ＳｉＧｅ）膜を光活性層に用いたこの発明の実施形
態にかかる光起電力素子を示す断面図である。FIG. 2 is a sectional view showing a photovoltaic device according to an embodiment of the present invention using the above-mentioned microcrystalline silicon germanium (SiGe) film as a photoactive layer.
【００１８】図２に示すように、ガラス、金属などから
なる支持基板１上に、銀（Ａｇ）などの高反射金属膜２
が形成される。なお、基板１表面には光閉じ込め効果を
備えるために、エッチングなどにより微小の凹凸が形成
されている。この凹凸は高反射金属膜２表面に設けても
よい。そして、高反射金属膜２上に膜厚５００ÅのＺｎ
Ｏからなる透明導電膜３が設けられる。この透明導電膜
３は次に形成されるｎ型微結晶シリコン膜４と高反射金
属膜２との合金化反応等を阻止する。As shown in FIG. 2, a highly reflective metal film 2 such as silver (Ag) is formed on a support substrate 1 made of glass, metal or the like.
Is formed. Note that minute irregularities are formed on the surface of the substrate 1 by etching or the like in order to provide a light confinement effect. The irregularities may be provided on the surface of the highly reflective metal film 2. Then, a Zn film having a thickness of 500 ° is formed on the high reflection metal film 2.
A transparent conductive film 3 made of O is provided. The transparent conductive film 3 prevents an alloying reaction between the n-type microcrystalline silicon film 4 to be formed next and the highly reflective metal film 2 and the like.
【００１９】この透明導電膜３上に、膜厚３００Åのｎ
型微結晶Ｓｉ層４、膜厚５０００Åのこの発明にかかる
ｉ型微結晶ＳｉＧｅ層５及び膜厚３００Åのｐ型微結晶
Ｓｉ層５が順次積層形成されている。そして、ｐ型微結
晶Ｓｉ層６上に膜厚５００ÅのＺｎＯからなる表面透明
電極７が設けられている。さらに、透明電極７上に銀な
どからなる櫛形電極８が設けられる。光は透明電極７側
から入射する。On this transparent conductive film 3, a 300-nm thick n
A microcrystalline Si layer 4, an i-type microcrystalline SiGe layer 5 of 5000 nm in thickness according to the present invention, and a p-type microcrystalline Si layer 5 of 300 μm in thickness are sequentially laminated. On the p-type microcrystalline Si layer 6, a surface transparent electrode 7 made of ZnO having a thickness of 500 ° is provided. Further, a comb-shaped electrode 8 made of silver or the like is provided on the transparent electrode 7. Light enters from the transparent electrode 7 side.
【００２０】上記したＺｎＯ膜はスパッター法、ｎ型微
結晶Ｓｉ層４とｐ型微結晶Ｓｉ層６は１３．５６ＭＨｚ
の平行平板型ＲＦプラズマＣＶＤにより形成されてい
る。尚、微結晶ＳｉＧｅ層５以外の部分は特に作成法の
指定はなく、この発明の効果が得られるものであれば何
でも良い。また、透明導電膜３、７はＺｎＯ膜以外のＳ
ｎＯ2膜、ＩＴＯでも良い。The above ZnO film is formed by sputtering, and the n-type microcrystalline Si layer 4 and the p-type microcrystalline Si layer 6 are formed at 13.56 MHz.
Is formed by the parallel plate type RF plasma CVD. It should be noted that, except for the microcrystalline SiGe layer 5, there is no particular designation of the preparation method, and any material can be used as long as the effects of the present invention can be obtained. Further, the transparent conductive films 3 and 7 are made of S other than ZnO film.
An nO 2 film or ITO may be used.
【００２１】そして、この発明の特徴とするｉ型微結晶
ＳｉＧｅ層５は次のように形成する。The i-type microcrystalline SiGe layer 5 characteristic of the present invention is formed as follows.
【００２２】微結晶ＳｉＧｅ層５は１３．５６ＭＨｚの
平行平板ＲＦプラズマＣＶＤにより、投入電力は２００
ｍＷ／cm２、圧力は３９．９Ｐａ、基板温度３００℃、
Ｈ2／ＳｉＨ4＋ＧｅＨ4＝３０、ＧｅＨ4／ＳｉＨ4＋Ｇ
ｅＨ4＝０．２３の条件で形成した。The microcrystalline SiGe layer 5 is formed by parallel plate RF plasma CVD at 13.56 MHz, and the input power is 200
mW / cm 2, pressure 39.9 Pa, substrate temperature 300 ° C.
H 2 / SiH 4 + GeH 4 = 30, GeH 4 / SiH 4 + G
It was formed under the condition of eH 4 = 0.23.
【００２３】上記条件で作成すると、Ｇｅ組成比は３０
％、成膜速度２．５Å／秒である。また、光吸収係数は
微結晶シリコンの約４倍のものが得られ、膜厚は微結晶
シリコンの場合の１／４である５０００Åとした。Under the above conditions, the Ge composition ratio is 30
%, And a film formation rate of 2.5 ° / sec. The light absorption coefficient was about four times that of microcrystalline silicon, and the film thickness was 5000 °, which is 1/4 that of microcrystalline silicon.
【００２４】上記した実施形態にかかる光起電力素子
は、ＡＭ−１．５、１００ｍＷ／cm２光照射下で、短絡
電流２５ｍＡ／cm2、開放電圧０．４６Ｖ、曲線因子
０．７、変換効率８％を示した。これは活性層以外を同
条件で形成した微結晶Ｓｉ光起電力素子と同等の値であ
り、１／４の光活性層膜厚で同じ特性が得られたことに
なる。The photovoltaic device according to the above-described embodiment has a short-circuit current of 25 mA / cm 2 , an open-circuit voltage of 0.46 V, a fill factor of 0.7 and a conversion of 100 mW / cm 2 under AM-1.5. The efficiency was 8%. This is a value equivalent to that of a microcrystalline Si photovoltaic element formed under the same conditions except for the active layer, and the same characteristics were obtained with a photoactive layer thickness of 1/4.
【００２５】次に、この発明の第２の実施形態を図３に
示す。図３は、この発明の他の実施の形態にかかる光起
電力装置を示す断面図である。尚、上記した実施の形態
と同じ部分には、同じ符号を付し、説明を省略する。こ
の実施の形態は、ｎｉｐ構造の半導体層を数段階積層し
た構造を持つ。すなわち、支持基板１上に高反射金属膜
２、透明導電膜３を設け、その上にｎ型微結晶Ｓｉ層４
（４ａ）、ｉ型半導体層５（５ａ）、ｐ型半導体層６
（６ａ）をこの順序で数段階積層形成している。Next, a second embodiment of the present invention is shown in FIG. FIG. 3 is a sectional view showing a photovoltaic device according to another embodiment of the present invention. The same parts as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted. This embodiment has a structure in which semiconductor layers having a nip structure are stacked in several stages. That is, a highly reflective metal film 2 and a transparent conductive film 3 are provided on a support substrate 1, and an n-type microcrystalline Si layer 4 is formed thereon.
(4a), i-type semiconductor layer 5 (5a), p-type semiconductor layer 6
(6a) is laminated in several steps in this order.
【００２６】図３に示す実施形態は、図２に示す実施形
態の光起電力素子の入射側にｎ型微結晶Ｓｉ層４ａ、ｉ
型非晶質Ｓｉ層５ａ、ｐ型非晶質ＳｉＣ層６ａの光起電
力素子を積層した構造である。ｐ型非晶質ＳｉＣ層６ａ
とｉ型非晶質Ｓｉ層５ａは１３．５６ＭＨｚの平行平板
型ＲＦプラズマＣＶＤで形成されている。それ以外は上
記した実施形態と同じである。In the embodiment shown in FIG. 3, an n-type microcrystalline Si layer 4a, i is provided on the incident side of the photovoltaic element of the embodiment shown in FIG.
This is a structure in which photovoltaic elements of a p-type amorphous Si layer 5a and a p-type amorphous SiC layer 6a are stacked. p-type amorphous SiC layer 6a
And the i-type amorphous Si layer 5a are formed by 13.56 MHz parallel plate RF plasma CVD. Otherwise, the configuration is the same as the above-described embodiment.
【００２７】上記した第２の実施形態では、第１の実施
形態と同測定条件下で、短絡電流１２ｍＡ／cm2、開放
電圧１．３０Ｖ、曲線因子０．７１、変換効率１１％を
示した。これも微結晶ＳｉＧｅ活性層を微結晶Ｓｉにし
た以外は同条件で形成した光起電力素子と同等の値であ
り、本発明の効果が示された。In the second embodiment, the short-circuit current is 12 mA / cm 2 , the open-circuit voltage is 1.30 V, the fill factor is 0.71, and the conversion efficiency is 11% under the same measurement conditions as in the first embodiment. . This is also a value equivalent to that of the photovoltaic element formed under the same conditions except that the microcrystalline SiGe active layer is made of microcrystalline Si, and the effect of the present invention was shown.
【００２８】[0028]
【発明の効果】以上説明したように、この発明によれ
ば、膜厚の薄い微結晶シリコンゲルマニウムを光活性層
に用いることができ、スループットを大幅に向上させる
ことができる。As described above, according to the present invention, microcrystalline silicon germanium having a small thickness can be used for the photoactive layer, and the throughput can be greatly improved.
【図１】プラズマＣＶＤで微結晶シリコンゲルマニウム
（ＳｉＧｅ）膜を形成したときの非晶質と微結晶の、水
素希釈率（Ｈ2／ＳｉＨ4＋ＧｅＨ4）とゲルマン流量比
（ＧｅＨ4／ＳｉＨ4＋ＧｅＨ4）に関する境界を各成膜
温度に対して示す特性図である。FIG. 1 shows a hydrogen dilution ratio (H 2 / SiH 4 + GeH 4 ) and a germane flow ratio (GeH 4 / SiH 4 ) of amorphous and microcrystal when a microcrystalline silicon germanium (SiGe) film is formed by plasma CVD. FIG. 9 is a characteristic diagram showing a boundary regarding + GeH 4 ) with respect to each film forming temperature.
【図２】この発明の第１の実施形態にかかる光起電力素
子を示す断面図である。FIG. 2 is a sectional view showing a photovoltaic device according to the first embodiment of the present invention.
【図３】この発明の第２の実施形態にかかる光起電力素
子を示す断面図である。FIG. 3 is a sectional view showing a photovoltaic device according to a second embodiment of the present invention.
【図４】従来の光起電力素子の構造を示す断面図であ
る。FIG. 4 is a cross-sectional view showing a structure of a conventional photovoltaic element.
１ 支持基板 ２ 高反射金属膜 ３ 透明導電膜 ４ ｎ型微結晶Ｓｉ層 ５ ｉ型微結晶ＳｉＧｅ層 ６ ｐ型微結晶Ｓｉ層 ７ 表面透明電極 ８ 櫛形電極 REFERENCE SIGNS LIST 1 support substrate 2 highly reflective metal film 3 transparent conductive film 4 n-type microcrystalline Si layer 5 i-type microcrystalline SiGe layer 6 p-type microcrystalline Si layer 7 surface transparent electrode 8 comb-shaped electrode
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１３年７月１９日（２００１．７．１
９）[Submission date] July 19, 2001 (2001.7.1)
9)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００４[Correction target item name] 0004
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００４】上記したａ−Ｓｉ光起電力装置は、光照射
後、光劣化が生じることが知られている。そこで、薄膜
で且つ光照射に対して安定性の高い材料として、微結晶
シリコンがあり、この微結晶シリコンを光活性層に用い
た光起電力装置が提案されている。この微結晶シリコン
は微結晶Ｓｉ相とａ−Ｓｉ相とが混在する薄膜である。It is known that the a-Si photovoltaic device described above undergoes photodegradation after light irradiation. Therefore, microcrystalline silicon is a material having a thin film and high stability to light irradiation, and a photovoltaic device using this microcrystalline silicon for a photoactive layer has been proposed . This microcrystalline silicon is a thin film in which a microcrystalline Si phase and an a-Si phase are mixed.
Claims (2)
％以下の微結晶シリコンゲルマニウムを光活性層として
用い、且つその膜厚が１μｍ以下であることを特徴とす
る光起電力装置。1. The composition ratio of germanium is not less than 20% and not more than 50%.
% Of microcrystalline silicon germanium used as a photoactive layer and has a thickness of 1 μm or less.
ラズマＣＶＤで形成され、その際の成膜時の基板温度を
２００℃以上に設定することを特徴とする請求項１に記
載の光起電力装置。2. The photovoltaic device according to claim 1, wherein the microcrystalline silicon germanium is formed by plasma CVD, and a substrate temperature at the time of film formation is set to 200 ° C. or higher.
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|---|---|---|---|
| JP2000090562A JP2001284619A (en) | 2000-03-29 | 2000-03-29 | Phtovoltaic device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7075052B2 (en) | 2002-10-08 | 2006-07-11 | Sanyo Electric Co., Ltd. | Photoelectric conversion device |
| JP2006216624A (en) * | 2005-02-01 | 2006-08-17 | Mitsubishi Heavy Ind Ltd | Solar cell and its production process |
| WO2007114432A1 (en) * | 2006-04-03 | 2007-10-11 | Mitsubishi Heavy Industries, Ltd. | Photoelectric converter device and process for producing the same |
| WO2010064455A1 (en) * | 2008-12-05 | 2010-06-10 | 三菱重工業株式会社 | Photoelectric conversion device |
| JP2011181768A (en) * | 2010-03-02 | 2011-09-15 | National Institute Of Advanced Industrial Science & Technology | Method for manufacturing photoelectric conversion device |
-
2000
- 2000-03-29 JP JP2000090562A patent/JP2001284619A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7075052B2 (en) | 2002-10-08 | 2006-07-11 | Sanyo Electric Co., Ltd. | Photoelectric conversion device |
| JP2006216624A (en) * | 2005-02-01 | 2006-08-17 | Mitsubishi Heavy Ind Ltd | Solar cell and its production process |
| WO2007114432A1 (en) * | 2006-04-03 | 2007-10-11 | Mitsubishi Heavy Industries, Ltd. | Photoelectric converter device and process for producing the same |
| JP2007281018A (en) * | 2006-04-03 | 2007-10-25 | Mitsubishi Heavy Ind Ltd | Photoelectric conversion device, and its manufacturing method |
| WO2010064455A1 (en) * | 2008-12-05 | 2010-06-10 | 三菱重工業株式会社 | Photoelectric conversion device |
| JP2010135636A (en) * | 2008-12-05 | 2010-06-17 | Mitsubishi Heavy Ind Ltd | Photoelectric conversion device |
| JP2011181768A (en) * | 2010-03-02 | 2011-09-15 | National Institute Of Advanced Industrial Science & Technology | Method for manufacturing photoelectric conversion device |
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