JPS56118331A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56118331A JPS56118331A JP2141880A JP2141880A JPS56118331A JP S56118331 A JPS56118331 A JP S56118331A JP 2141880 A JP2141880 A JP 2141880A JP 2141880 A JP2141880 A JP 2141880A JP S56118331 A JPS56118331 A JP S56118331A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- as2o3
- constitution
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000012466 permeate Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To reproducibly diffuse a V group element by a method wherein a silicate glass layer containing a V group element is formed on the SiO2 film on an Si substrate and treated on heating in H2. CONSTITUTION:An Si3N4 mask 3 is applied onto the SiO2 film 2 on a P type Si substrate 1, and, e.g., an ASG layer 4 containing As2O3 is piled thereon. Then, this is treated in H2 at 1,100 deg.C. Consequently, As2O3 is reduced to As, which readily permeates through SiO2 and diffuses into the Si substrate 1 to form an N layer 5. By said constitution, the N layer 5 of desired concentration is highly accurately and readily formed by simply controlling temperature, as well as a low-concentration layer which is impossible by conventional method can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141880A JPS56118331A (en) | 1980-02-22 | 1980-02-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141880A JPS56118331A (en) | 1980-02-22 | 1980-02-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56118331A true JPS56118331A (en) | 1981-09-17 |
Family
ID=12054451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2141880A Pending JPS56118331A (en) | 1980-02-22 | 1980-02-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56118331A (en) |
-
1980
- 1980-02-22 JP JP2141880A patent/JPS56118331A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56118331A (en) | Manufacture of semiconductor device | |
| JPS5726467A (en) | Manufacture of semiconductor device | |
| JPS56103445A (en) | Production of semiconductor device | |
| JPS56147466A (en) | Semiconductor device | |
| JPS5632768A (en) | Semiconductor device | |
| JPS5536913A (en) | Semiconductor device | |
| JPS56116618A (en) | Manufacture of semiconductor device | |
| JPS6457627A (en) | Manufacture of semiconductor device | |
| JPS56150823A (en) | Manufacture of semiconductor device | |
| JPS57194523A (en) | Manufacture of semiconductor device | |
| JPS5693315A (en) | Manufacture of semiconductor device | |
| JPS56148825A (en) | Manufacture of semiconductor device | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS56134739A (en) | Manufacture of semiconductor device | |
| JPS54118168A (en) | Manufacture of semiconductor device | |
| JPS55121635A (en) | Diffusing method for impurity in semiconductor apparatus | |
| JPS5776866A (en) | Manufacture of semiconductor device | |
| JPS55156327A (en) | Manufacture for semiconductor | |
| JPS5710949A (en) | Manufacture of semiconductor device | |
| JPS56169322A (en) | Selective diffusion of boron into silicon | |
| JPS56161640A (en) | Semiconductor diffusion method | |
| JPS5676538A (en) | Formation of insulating film on semiconductor substrate | |
| JPS5759322A (en) | Manufacture of semiconductor device | |
| JPS5539634A (en) | Manufacture of semiconductor | |
| JPS56133873A (en) | Manufacture of semiconductor device |