JPS57194523A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57194523A JPS57194523A JP7960181A JP7960181A JPS57194523A JP S57194523 A JPS57194523 A JP S57194523A JP 7960181 A JP7960181 A JP 7960181A JP 7960181 A JP7960181 A JP 7960181A JP S57194523 A JPS57194523 A JP S57194523A
- Authority
- JP
- Japan
- Prior art keywords
- sio2 film
- impurity
- foreign matters
- aperture
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005553 drilling Methods 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To eliminate foreign matters such as resistor material by a method wherein an insulation film is formed on an exposed part formed by an aperture drilling process of a semiconductor substrate and only the insulation film at the part where an impurity diffusion layer is formd is removed. CONSTITUTION:An SiO2 film 12 is formd on a silicon-substrate 11 and an aperture is drilled for diffusion of impurity. An SiO2 film 12' is formed on the semiconductor substrate by exposure. The SiO2 film 12' in the diffusion aperture is completely removed by etching. Then glass material which contains impurity such as arsenic silicate glass is applied by spinning-coated. A spin-on-glass layer 13 is formed by thermal treatment and an impurity diffusion layer 14 is formed by thermal treatment and the spin-on-glass layer 13 is removed. With this constitution, even if foreign matters 15 such as resistor material is remained, those foreign matters 15 is taken into the SiO2 film 12' and removed with the SiO2 film by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7960181A JPS57194523A (en) | 1981-05-26 | 1981-05-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7960181A JPS57194523A (en) | 1981-05-26 | 1981-05-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57194523A true JPS57194523A (en) | 1982-11-30 |
Family
ID=13694524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7960181A Pending JPS57194523A (en) | 1981-05-26 | 1981-05-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57194523A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60196936A (en) * | 1984-03-21 | 1985-10-05 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPH02312A (en) * | 1989-02-13 | 1990-01-05 | Seiko Epson Corp | Manufacture of semiconductor device |
-
1981
- 1981-05-26 JP JP7960181A patent/JPS57194523A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60196936A (en) * | 1984-03-21 | 1985-10-05 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPH02312A (en) * | 1989-02-13 | 1990-01-05 | Seiko Epson Corp | Manufacture of semiconductor device |
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