DE1907076A1 - Graphite heating and / or support element - Google Patents

Graphite heating and / or support element

Info

Publication number
DE1907076A1
DE1907076A1 DE19691907076 DE1907076A DE1907076A1 DE 1907076 A1 DE1907076 A1 DE 1907076A1 DE 19691907076 DE19691907076 DE 19691907076 DE 1907076 A DE1907076 A DE 1907076A DE 1907076 A1 DE1907076 A1 DE 1907076A1
Authority
DE
Germany
Prior art keywords
heating
carbon layer
graphite
layer
carrier element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691907076
Other languages
German (de)
Inventor
Hinrichs Dr Rer Nat Gerd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schunk and Ebe GmbH
Original Assignee
Schunk and Ebe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schunk and Ebe GmbH filed Critical Schunk and Ebe GmbH
Priority to DE19691907076 priority Critical patent/DE1907076A1/en
Priority to FR7003255A priority patent/FR2031266A5/fr
Priority to NL7002110A priority patent/NL7002110A/xx
Priority to GB712870A priority patent/GB1305454A/en
Publication of DE1907076A1 publication Critical patent/DE1907076A1/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Resistance Heating (AREA)

Description

SCHUNK & EBE GMBH
HEUCHELHE IMSCHUNK & EBE GMBH
HEUCHELHE IM

Graphitheiz- und/oder -trägerelementGraphite heating and / or support element

Die Erfindung betrifft ein Graphitheiz- und/oder -trägerelement, wie es bei der Epitaxie von Silizium Verwendung findet. An diese Elemente werden hohe Anforderungen in bezug auf Reinheit gestellt·The invention relates to a graphite heating and / or support element, as is used in the epitaxy of silicon finds. These elements are subject to high purity requirements.

Es ist bekannt, Graphitheiz- und/oder -trägerelemente mit einer Siliziumkarbidschicht zu versehen. Diese Schicht ist jedoch wegen ihrer ungenügenden Dichte nicht in der Lage, die Diffusion von Verunreinigungen aus dem Graphit in die Siliziumscheiben ausreichend zu verhindern» Um derartige Schichten trotzdem verwenden zu können, muß man den Diffusionsweg vergrößern, also die Schichten dick auftragen, und zwar mindestens 0,5 his 1 mm. Auf diese Weise gelingt es, die Siliziumscheiben weitgehend frei von Verunreinigungen des Graphits zu halten. Die Schicht besitzt jedoch den Nachteil, daß sie schlecht auf der Unterlage haftet, da auf Grund der unterschiedlichen Wärmedehnung von Graphit und Siliziumkarbid Verschiebungen stattfinden, denen die dicke Schicht wegen ihres starren Aufbaus nicht folgen kann. Daher,bilden sich schon nach wenigen Glühungen Mikrorisse, die das Trägerelement unbrauchbar machen, weil durch diese Risse Verunreinigungen aus dem Graphit zu den Siliziumscheiben gelangen können. Im Extremfall kann sich die Siliziumkarbidschicht sogar von der Unterlage lösene It is known to provide graphite heating and / or support elements with a silicon carbide layer. However, because of its insufficient density, this layer is not able to adequately prevent the diffusion of impurities from the graphite into the silicon wafers 0.5 to 1 mm. In this way it is possible to keep the silicon wafers largely free from contamination of the graphite. The layer has the disadvantage, however, that it does not adhere well to the substrate, since shifts occur due to the different thermal expansion of graphite and silicon carbide, which the thick layer cannot follow because of its rigid structure. Therefore, after just a few annealing, microcracks form, which make the carrier element unusable because impurities from the graphite can get to the silicon wafers through these cracks. In extreme cases, the silicon carbide layer can even become detached from the base e

Zweck der Erfindung ist es, ein Graphitheiz- und/oder -trägerelement für die Epitaxie von Silizium zu schaffen, welches mit einer Schicht versehen ist, die das Austreten von Verunreinigungen aus dem Graphit dauerhaft verhindert und die fest an der Graphitunterlage haftet*The purpose of the invention is to provide a graphite heating and / or support element for the epitaxy of silicon, which is provided with a layer that prevents the leakage of impurities permanently prevented from the graphite and which adheres firmly to the graphite base *

- Blatt 2 -- Page 2 -

009836/166 4009836/166 4

SCHUNK & EBE GiIBH
HEUCHELHSIMSCHUNK & EBE GiIBH
HEUCHELHSIM

Erfindungsgemäß ist das Graphitheiz- und/oder -trägerelement dadurch gekennzeichnet, daß seine Oberfläche mit einer pyrolytisch abgeschiedenen Kohlenstoffschicht und diese gegebenenfalls mit einer Siliziumkarbidsehieht versehen ist.According to the invention is the graphite heating and / or support element characterized in that its surface with a pyrolytically deposited carbon layer and this is optionally provided with a silicon carbide cover.

Der pyrolytisch abgeschiedene Kohlenstoff kann sowohl eine Hartkohle- als auch eine Pyrographitschicht sein; beide Schichten sind durch die pyrolytische AbScheidung frei von Verunreinigungen, verhindern schon bei Schichtdicken von 5 bis 50 yim die Diffusion von Verunreinigungen aus der Graphitunterlage und verbinden sich fest und rißfrei ext der Unterlagej wodurch über eine lange Einsatzdauer die einwandfreie Punktion gewährleistet ist«The pyrolytically deposited carbon can be both a Hard carbon as well as a pyrographite layer; both layers are free from pyrolytic deposition Impurities prevent the diffusion of impurities from the layer thicknesses of 5 to 50 μm Graphite base and connect firmly and crack-free ext of the base, which means that over a long period of use the perfect puncture is guaranteed «

Die gegebenenfalls anschließend aufgebrachte Siliziumkarbidschicht zur Verhinderung von Reaktionen zwischen, den Kohlenstoff und Silizium muß nur noch wenige Jim dick sein, haftet in dieser Stärke fest an der Unterlage und neigt nicht zur Bildung von Mikrorissen, da sie infolge ihrer geringen Dicke elastisch ist und der durch verschiedene üförmeauadehnungskoeffizienten bewirkten Verschiebung folgt·The subsequently applied silicon carbide layer, if necessary to prevent reactions between, the carbon and silicon only needs to be a few pounds thick to adhere in this thickness firmly to the substrate and does not tend to form microcracks, as they are due to their small thickness is elastic and which is due to different U-shape expansion coefficients caused shift follows

009836/1664009836/1664

Claims (1)

SCHUHK & EBE GMBH
HEUCHELHEIMSCHUHK & EBE GMBH
HEUCHELHEIM Pat entansprüchePatent claims 1· Heiz- und/oder Trägerelement für die Epitaxie von Silizium ans Graphit, dadurch gekenn- ; zeichnet, daß die Sraphit ob er fläche mit einer pyrolytisch abgeschiedenen Kohlenstoff schicht versehen wird.1 · heating and / or carrier element for the epitaxy of silicon on graphite, thereby marked ; draws that the sraphite whether it is provided with a pyrolytically deposited carbon layer surface. 2· Heiz- und/oder Trägereleaent nach Anspruch 1, dadurch gekennzeichnet, daß die Kohlenstoff schicht Hartkohle ist.2 · heating and / or carrier element according to claim 1, characterized in that the carbon layer is hard carbon. 3· Heiz- und/oder Trägerelement nach Anspruch 1, dadurch gekennzeichnet, daß die Kohlenstoffschicht Pyrographit ist.3 heating and / or carrier element according to claim 1, characterized in that the carbon layer is pyrographite. 4· Heiz- und/oder Trägerelement nach den Ansprüchen 1 bis 3» dadurch gekennzeichnet, daß die Kohlenstoff schicht 5 bis 50 μπι dick ist«4 · heating and / or carrier element according to claims 1 to 3 »characterized in that the Carbon layer is 5 to 50 μm thick « 5· Heiz- und/oder Trägereleaent nach den Ansprüchen 1 bis 4» dadurch gekennzeichnet, daß auf der dichten Kohlenstoffschicht zusätzlich eine Siliziumkarbidschicht aufgebracht ist.5 · Heating and / or carrier team according to claims 1 to 4 » characterized in that on the dense carbon layer, a silicon carbide layer is also applied. In Betracht gezogene Druckschriftent Deutsche Patentschrift 402 153 * « 438 429Contemplated publications German patent specification 402 153 * «438 429 Deutsche Auslegeschrift 1 I96 170 britisches Patent 1 032 102German Auslegeschrift 1 I96 170 British patent 1,032,102 009836/1664009836/1664
DE19691907076 1969-02-13 1969-02-13 Graphite heating and / or support element Pending DE1907076A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19691907076 DE1907076A1 (en) 1969-02-13 1969-02-13 Graphite heating and / or support element
FR7003255A FR2031266A5 (en) 1969-02-13 1970-01-30
NL7002110A NL7002110A (en) 1969-02-13 1970-02-13
GB712870A GB1305454A (en) 1969-02-13 1970-02-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691907076 DE1907076A1 (en) 1969-02-13 1969-02-13 Graphite heating and / or support element

Publications (1)

Publication Number Publication Date
DE1907076A1 true DE1907076A1 (en) 1970-09-03

Family

ID=5725061

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691907076 Pending DE1907076A1 (en) 1969-02-13 1969-02-13 Graphite heating and / or support element

Country Status (4)

Country Link
DE (1) DE1907076A1 (en)
FR (1) FR2031266A5 (en)
GB (1) GB1305454A (en)
NL (1) NL7002110A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825013A1 (en) * 1978-06-07 1979-12-13 Concordia Sprecher Schalt CHASSIS SWITCH-DISCONNECTOR
DE3505795A1 (en) * 1985-02-20 1986-08-21 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Method for the controlled variation of a temperature gradient in a substrate while holding constant a prescribable mean temperature

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS5610921A (en) 1979-07-09 1981-02-03 Toshiba Ceramics Co Ltd Material for equipment for manufacturing semiconductor and its treating furnace
JPH07176482A (en) * 1991-05-31 1995-07-14 At & T Corp Method and apparatus for epitaxial growth
US6965156B1 (en) 2002-12-27 2005-11-15 Actel Corporation Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
US7459763B1 (en) 2001-10-02 2008-12-02 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
US20030062596A1 (en) * 2001-10-02 2003-04-03 Actel Corporation Metal-to-metal antifuse employing carbon-containing antifuse material
US7390726B1 (en) 2001-10-02 2008-06-24 Actel Corporation Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825013A1 (en) * 1978-06-07 1979-12-13 Concordia Sprecher Schalt CHASSIS SWITCH-DISCONNECTOR
DE3505795A1 (en) * 1985-02-20 1986-08-21 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Method for the controlled variation of a temperature gradient in a substrate while holding constant a prescribable mean temperature

Also Published As

Publication number Publication date
GB1305454A (en) 1973-01-31
NL7002110A (en) 1970-08-17
FR2031266A5 (en) 1970-11-13

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