NL7002110A - - Google Patents

Info

Publication number
NL7002110A
NL7002110A NL7002110A NL7002110A NL7002110A NL 7002110 A NL7002110 A NL 7002110A NL 7002110 A NL7002110 A NL 7002110A NL 7002110 A NL7002110 A NL 7002110A NL 7002110 A NL7002110 A NL 7002110A
Authority
NL
Netherlands
Application number
NL7002110A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7002110A publication Critical patent/NL7002110A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Resistance Heating (AREA)
NL7002110A 1969-02-13 1970-02-13 NL7002110A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691907076 DE1907076A1 (en) 1969-02-13 1969-02-13 Graphite heating and / or support element

Publications (1)

Publication Number Publication Date
NL7002110A true NL7002110A (en) 1970-08-17

Family

ID=5725061

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7002110A NL7002110A (en) 1969-02-13 1970-02-13

Country Status (4)

Country Link
DE (1) DE1907076A1 (en)
FR (1) FR2031266A5 (en)
GB (1) GB1305454A (en)
NL (1) NL7002110A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4424193A (en) 1979-07-09 1984-01-03 Toshiba Ceramics Co., Ltd. Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825013A1 (en) * 1978-06-07 1979-12-13 Concordia Sprecher Schalt CHASSIS SWITCH-DISCONNECTOR
DE3505795A1 (en) * 1985-02-20 1986-08-21 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Method for the controlled variation of a temperature gradient in a substrate while holding constant a prescribable mean temperature
JPH07176482A (en) * 1991-05-31 1995-07-14 At & T Corp Method and apparatus for epitaxial growth
US7459763B1 (en) 2001-10-02 2008-12-02 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
US7390726B1 (en) 2001-10-02 2008-06-24 Actel Corporation Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
US6965156B1 (en) 2002-12-27 2005-11-15 Actel Corporation Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
US20030062596A1 (en) * 2001-10-02 2003-04-03 Actel Corporation Metal-to-metal antifuse employing carbon-containing antifuse material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
US4424193A (en) 1979-07-09 1984-01-03 Toshiba Ceramics Co., Ltd. Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
US4624735A (en) * 1979-07-09 1986-11-25 Toshiba Ceramics Co., Ltd. Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members

Also Published As

Publication number Publication date
GB1305454A (en) 1973-01-31
DE1907076A1 (en) 1970-09-03
FR2031266A5 (en) 1970-11-13

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