NL7304626A - - Google Patents
Info
- Publication number
- NL7304626A NL7304626A NL7304626A NL7304626A NL7304626A NL 7304626 A NL7304626 A NL 7304626A NL 7304626 A NL7304626 A NL 7304626A NL 7304626 A NL7304626 A NL 7304626A NL 7304626 A NL7304626 A NL 7304626A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7314818A FR2227051B1 (xx) | 1973-04-24 | 1973-04-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7304626A true NL7304626A (xx) | 1974-10-07 |
Family
ID=9118414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7304626A NL7304626A (xx) | 1973-04-24 | 1973-04-03 |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE797660A (xx) |
| FR (1) | FR2227051B1 (xx) |
| GB (1) | GB1432240A (xx) |
| NL (1) | NL7304626A (xx) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4869776A (en) * | 1986-07-29 | 1989-09-26 | Sharp Kabushiki Kaisha | Method for the growth of a compound semiconductor crystal |
| RU2046162C1 (ru) * | 1992-12-01 | 1995-10-20 | Научно-производственное предприятие "Принсипиа-Оптикс" | Способ выращивания монокристаллов из паровой фазы и устройство для его осуществления |
| DE4310745C2 (de) * | 1993-04-01 | 1999-07-08 | Siemens Ag | Verfahren zum Herstellen von SiC-Einkristallen und Vorrichtung zur Durchführung des Verfahrens |
-
1973
- 1973-04-02 BE BE129550A patent/BE797660A/xx unknown
- 1973-04-03 NL NL7304626A patent/NL7304626A/xx unknown
- 1973-04-04 GB GB1606173A patent/GB1432240A/en not_active Expired
- 1973-04-24 FR FR7314818A patent/FR2227051B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2227051A1 (xx) | 1974-11-22 |
| FR2227051B1 (xx) | 1976-11-12 |
| GB1432240A (en) | 1976-04-14 |
| BE797660A (fr) | 1973-10-02 |