GB1261065A - Method for growing single crystals - Google Patents

Method for growing single crystals

Info

Publication number
GB1261065A
GB1261065A GB2031969A GB2031969A GB1261065A GB 1261065 A GB1261065 A GB 1261065A GB 2031969 A GB2031969 A GB 2031969A GB 2031969 A GB2031969 A GB 2031969A GB 1261065 A GB1261065 A GB 1261065A
Authority
GB
United Kingdom
Prior art keywords
zone
solution
gasb
inas
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2031969A
Inventor
John Bernard Mooney
William Wallace Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of GB1261065A publication Critical patent/GB1261065A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,261,065. Crystal-pulling. VARIAN ASSOCIATES. 21 April, 1969 [1 May, 1968], No. 20319/69. Heading B1S. A single crystal 5 is pulled from a solution zone 3 above a solid zone 4 in a crucible which is heated by a coil 2 and raised as pulling proceeds to replenish the solution zone with material dissolved from the solid zone. The single crystal may contain a small proportion of solvent. The material in the solid zone may be different from that in solution. Solutions specified are GaAs in Ga, InAs or GaSb and YtF in LiF. Solutions and solids (in brackets) specified are InSb (GaSb) in In, GaAs (InAs) in Ga, and PbTe (SnTe) in Pb.
GB2031969A 1968-05-01 1969-04-21 Method for growing single crystals Expired GB1261065A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72574668A 1968-05-01 1968-05-01

Publications (1)

Publication Number Publication Date
GB1261065A true GB1261065A (en) 1972-01-19

Family

ID=24915801

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2031969A Expired GB1261065A (en) 1968-05-01 1969-04-21 Method for growing single crystals

Country Status (4)

Country Link
DE (1) DE1920787A1 (en)
FR (1) FR2007579A1 (en)
GB (1) GB1261065A (en)
NL (1) NL6906701A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112941620A (en) * 2021-03-12 2021-06-11 中国科学院合肥物质科学研究院 Pulling preparation device and method for controlling volatilization of gallium-containing optical functional crystal
CN114197055A (en) * 2022-02-18 2022-03-18 武汉高芯科技有限公司 InAs/InSb strain superlattice material and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112941620A (en) * 2021-03-12 2021-06-11 中国科学院合肥物质科学研究院 Pulling preparation device and method for controlling volatilization of gallium-containing optical functional crystal
CN114197055A (en) * 2022-02-18 2022-03-18 武汉高芯科技有限公司 InAs/InSb strain superlattice material and preparation method thereof
CN114197055B (en) * 2022-02-18 2022-07-22 武汉高芯科技有限公司 InAs/InSb strain superlattice material and preparation method thereof

Also Published As

Publication number Publication date
FR2007579A1 (en) 1970-01-09
DE1920787A1 (en) 1969-11-13
NL6906701A (en) 1969-11-04

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