GB1426511A - Method for producing a semiconductor device having a very small deviation in lattice constant - Google Patents

Method for producing a semiconductor device having a very small deviation in lattice constant

Info

Publication number
GB1426511A
GB1426511A GB17173A GB17173A GB1426511A GB 1426511 A GB1426511 A GB 1426511A GB 17173 A GB17173 A GB 17173A GB 17173 A GB17173 A GB 17173A GB 1426511 A GB1426511 A GB 1426511A
Authority
GB
United Kingdom
Prior art keywords
lattice constant
producing
semiconductor device
small deviation
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB17173A priority Critical patent/GB1426511A/en
Publication of GB1426511A publication Critical patent/GB1426511A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

1426511 Semi-conductors HANDOTAI KENKYU SHINKOKAI 2 Feb 1973 171/73 Heading H1K Variation in the lattice constant of a germanium region due to the presence of impurity atoms are compensated by doping the region with In and As.
GB17173A 1973-02-02 1973-02-02 Method for producing a semiconductor device having a very small deviation in lattice constant Expired GB1426511A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB17173A GB1426511A (en) 1973-02-02 1973-02-02 Method for producing a semiconductor device having a very small deviation in lattice constant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB17173A GB1426511A (en) 1973-02-02 1973-02-02 Method for producing a semiconductor device having a very small deviation in lattice constant

Publications (1)

Publication Number Publication Date
GB1426511A true GB1426511A (en) 1976-03-03

Family

ID=9699662

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17173A Expired GB1426511A (en) 1973-02-02 1973-02-02 Method for producing a semiconductor device having a very small deviation in lattice constant

Country Status (1)

Country Link
GB (1) GB1426511A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0903429A2 (en) * 1997-08-20 1999-03-24 Japan Science and Technology Corporation Process for producing heavily doped silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0903429A2 (en) * 1997-08-20 1999-03-24 Japan Science and Technology Corporation Process for producing heavily doped silicon
EP0903429A3 (en) * 1997-08-20 2000-08-09 Japan Science and Technology Corporation Process for producing heavily doped silicon

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19930131