DK135154B - Process for the production of rod-shaped silicon crystals with homogeneous antimony doping. - Google Patents

Process for the production of rod-shaped silicon crystals with homogeneous antimony doping.

Info

Publication number
DK135154B
DK135154B DK294968A DK294968A DK135154B DK 135154 B DK135154 B DK 135154B DK 294968 A DK294968 A DK 294968A DK 294968 A DK294968 A DK 294968A DK 135154 B DK135154 B DK 135154B
Authority
DK
Denmark
Prior art keywords
homogeneous
rod
production
shaped silicon
silicon crystals
Prior art date
Application number
DK294968A
Other languages
Danish (da)
Other versions
DK135154C (en
Inventor
Rudolf Kappelmeyer
Max Hugo Kellerbauer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK135154B publication Critical patent/DK135154B/en
Application granted granted Critical
Publication of DK135154C publication Critical patent/DK135154C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK294968A 1966-06-13 1968-06-20 Process for the production of rod-shaped silicon crystals with homogeneous antimony doping. DK135154B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0104258 1966-06-13
DES0110434 1967-06-21

Publications (2)

Publication Number Publication Date
DK135154B true DK135154B (en) 1977-03-14
DK135154C DK135154C (en) 1977-08-29

Family

ID=25998491

Family Applications (1)

Application Number Title Priority Date Filing Date
DK294968A DK135154B (en) 1966-06-13 1968-06-20 Process for the production of rod-shaped silicon crystals with homogeneous antimony doping.

Country Status (7)

Country Link
CH (1) CH517525A (en)
DE (1) DE1644009B2 (en)
DK (1) DK135154B (en)
FR (1) FR94593E (en)
GB (1) GB1228406A (en)
NL (1) NL6804204A (en)
SE (1) SE345969B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2639563A1 (en) * 1976-09-02 1978-03-09 Wacker Chemitronic Process for the production of crucible-drawn silicon rods with a content of volatile dopants, especially antimony, with close resistance tolerance
US4789596A (en) * 1987-11-27 1988-12-06 Ethyl Corporation Dopant coated bead-like silicon particles
JPH0777995B2 (en) * 1989-11-16 1995-08-23 信越半導体株式会社 Single crystal resistivity control method
US6004393A (en) * 1997-04-22 1999-12-21 Komatsu Electronic Metals Co., Ltd. Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
JPH10291892A (en) * 1997-04-22 1998-11-04 Komatsu Electron Metals Co Ltd Method for detecting concentration of impurity in crystal, production of single crystal and device for pulling single crystal
DE10250822B4 (en) * 2002-10-31 2006-09-28 Siltronic Ag A method for producing a single-crystal doped with volatile foreign matter of silicon
NO335110B1 (en) * 2011-10-06 2014-09-15 Elkem Solar As Process for the preparation of silicon monocrystals and multicrystalline silicon ingots

Also Published As

Publication number Publication date
FR94593E (en) 1969-09-12
CH517525A (en) 1972-01-15
DE1644009A1 (en) 1970-09-24
SE345969B (en) 1972-06-19
GB1228406A (en) 1971-04-15
DK135154C (en) 1977-08-29
DE1644009B2 (en) 1975-10-09
NL6804204A (en) 1968-12-23

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Legal Events

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PBP Patent lapsed