GB950467A - Improvements in or relating to the production of semi-conductor devices - Google Patents

Improvements in or relating to the production of semi-conductor devices

Info

Publication number
GB950467A
GB950467A GB2720360A GB2720360A GB950467A GB 950467 A GB950467 A GB 950467A GB 2720360 A GB2720360 A GB 2720360A GB 2720360 A GB2720360 A GB 2720360A GB 950467 A GB950467 A GB 950467A
Authority
GB
United Kingdom
Prior art keywords
junction
heating
emitter
collector
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2720360A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB950467A publication Critical patent/GB950467A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

950,467. Semi-conductor devices. SIEMENS & HALSKE A.G. Aug. 5, 1960 [Aug. 6, 1959], No. 27203/60. Heading H1K. In making a PN junction by the normal alloying technique heating is continued after solidliquid equilibrium is reached for 6-7 times as long as it took to reach equilibrium to enable impurity diffusion to produce a shallow PN junction. In the example indium emitter and collector pellets are applied to opposite faces of an arsenic doped N-type germanium body and alloyed thereto by heating to 500-600 C. for 1 hour. Heating is then continued for a further 6-7 hours at the same or at a lower temperature. This results in a collector junction of increased breakdown voltage and reduced capacitance. A drift transistor may be produced by incorporating arsenic into the emitter pellet to produce the required impurity gradient in the base zone. Alternatively such a gradient may be obtained by producing the collector junction by the above alloy-diffusion technique and the emitter by the normal alloying process.
GB2720360A 1959-08-06 1960-08-05 Improvements in or relating to the production of semi-conductor devices Expired GB950467A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64325A DE1163979B (en) 1959-08-06 1959-08-06 Method for producing a flat transition between zones of different conduction types

Publications (1)

Publication Number Publication Date
GB950467A true GB950467A (en) 1964-02-26

Family

ID=7497098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2720360A Expired GB950467A (en) 1959-08-06 1960-08-05 Improvements in or relating to the production of semi-conductor devices

Country Status (4)

Country Link
CH (1) CH393541A (en)
DE (1) DE1163979B (en)
GB (1) GB950467A (en)
NL (1) NL254545A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1000115B (en) * 1954-03-03 1957-01-03 Standard Elektrik Ag Process for the production of semiconductor layer crystals with PN junction
DE1012696B (en) * 1954-07-06 1957-07-25 Siemens Ag Semiconductor transition between zones of different conduction types and process for producing the transition

Also Published As

Publication number Publication date
CH393541A (en) 1965-06-15
DE1163979B (en) 1964-02-27
NL254545A (en)

Similar Documents

Publication Publication Date Title
GB945742A (en)
GB1021756A (en) Thermoelectric device
GB839842A (en) Improvements in or relating to semi-conductor diodes
GB836851A (en) Improvements in semiconductor devices and methods of making same
GB936832A (en) Improvements relating to the production of p.n. junctions in semi-conductor material
GB1081376A (en) Method of producing a semiconductor device
GB849477A (en) Improvements in or relating to semiconductor control devices
GB950467A (en) Improvements in or relating to the production of semi-conductor devices
GB892029A (en) Semiconductor device
GB1053406A (en)
GB908103A (en) Improvements in or relating to the production of semi-conductor elements
GB940681A (en) Semiconductor devices
GB1014500A (en) Purifying semi-conductor materials
GB1426511A (en) Method for producing a semiconductor device having a very small deviation in lattice constant
GB743608A (en) Diffusion type semi-conductor devices
GB988341A (en) A process for the production of a p-doped zone in a body of semi-conductor material
GB876326A (en) Improvements in the manufacture of transistors
GB864771A (en) Improvements in or relating to junction transistors
GB843407A (en) Improvements in and relating to semi-conductor devices
GB855973A (en) Improvements in or relating to the manufacture of transistors
GB818564A (en) Improved method for the production of semiconductor bodies
GB967588A (en) Improvements relating to semiconductor devices
GB878263A (en) Temperature compensated grown junction transistor
GB1095675A (en) The production of a doped zone in a body of semiconductor material
GB857258A (en) Improved method for the production of semi-conductor bodies