JPS52150986A - Compound semiconductor integrated circuit device and its production - Google Patents

Compound semiconductor integrated circuit device and its production

Info

Publication number
JPS52150986A
JPS52150986A JP6767376A JP6767376A JPS52150986A JP S52150986 A JPS52150986 A JP S52150986A JP 6767376 A JP6767376 A JP 6767376A JP 6767376 A JP6767376 A JP 6767376A JP S52150986 A JPS52150986 A JP S52150986A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
circuit device
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6767376A
Other languages
Japanese (ja)
Inventor
Noboru Horie
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6767376A priority Critical patent/JPS52150986A/en
Publication of JPS52150986A publication Critical patent/JPS52150986A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an I2L circuit which operates on negative power supply voltage of a high operating speed by giving an impurity concentration gradient to the base region of a lateral transistor through diffusion and making the impurity concentration uniform through vapor growing of the base region of a vertical transistor.
JP6767376A 1976-06-11 1976-06-11 Compound semiconductor integrated circuit device and its production Pending JPS52150986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6767376A JPS52150986A (en) 1976-06-11 1976-06-11 Compound semiconductor integrated circuit device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6767376A JPS52150986A (en) 1976-06-11 1976-06-11 Compound semiconductor integrated circuit device and its production

Publications (1)

Publication Number Publication Date
JPS52150986A true JPS52150986A (en) 1977-12-15

Family

ID=13351742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6767376A Pending JPS52150986A (en) 1976-06-11 1976-06-11 Compound semiconductor integrated circuit device and its production

Country Status (1)

Country Link
JP (1) JPS52150986A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527682A (en) * 1978-08-19 1980-02-27 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527682A (en) * 1978-08-19 1980-02-27 Mitsubishi Electric Corp Semiconductor device

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