GB1103906A - A nozzle for use in the orientation of the crystallites in a semiconductor crystal in the pulling of the crystal from a melt - Google Patents

A nozzle for use in the orientation of the crystallites in a semiconductor crystal in the pulling of the crystal from a melt

Info

Publication number
GB1103906A
GB1103906A GB40270/65A GB4027065A GB1103906A GB 1103906 A GB1103906 A GB 1103906A GB 40270/65 A GB40270/65 A GB 40270/65A GB 4027065 A GB4027065 A GB 4027065A GB 1103906 A GB1103906 A GB 1103906A
Authority
GB
United Kingdom
Prior art keywords
crystal
melt
crystallites
pulling
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40270/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1103906A publication Critical patent/GB1103906A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,103,906. Bismuth telluride. SIEMENSSCHUCKERTWERKE A.G. 21 Sept., 1965 [22 Sept., 1964], No. 40270/65. Heading B1S. A crystal 4 of bismuth telluride is pulled from a melt 2 in a heated crucible 1 through a die having two successive portions 6 and 7, of boron nitride and boron carbide respectively, portion 6 being of lower thermal conductivity than portion 7. The formation of a convex solidification face may be enhanced by means of a surrounding induction coil 9 or by means of a conical partition face between portions 6 and 7 (Fig. 2). A heat exchanger 5 provides heat dissipating means.
GB40270/65A 1964-09-22 1965-09-21 A nozzle for use in the orientation of the crystallites in a semiconductor crystal in the pulling of the crystal from a melt Expired GB1103906A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES93293A DE1220832B (en) 1964-09-22 1964-09-22 Drawing nozzle for pulling semiconductor crystals from a melt

Publications (1)

Publication Number Publication Date
GB1103906A true GB1103906A (en) 1968-02-21

Family

ID=7517878

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40270/65A Expired GB1103906A (en) 1964-09-22 1965-09-21 A nozzle for use in the orientation of the crystallites in a semiconductor crystal in the pulling of the crystal from a melt

Country Status (7)

Country Link
US (1) US3393054A (en)
AT (1) AT251670B (en)
BE (1) BE669955A (en)
CH (1) CH424730A (en)
DE (1) DE1220832B (en)
GB (1) GB1103906A (en)
NL (1) NL6506753A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2138359B2 (en) * 1971-07-31 1973-05-17 Preussag Ag, 3000 Hannover DEVICE FOR PULLING A ROD
JPS4868476A (en) * 1971-12-22 1973-09-18
JPS4869774A (en) * 1971-12-22 1973-09-21
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
JPS5190987A (en) * 1975-02-07 1976-08-10
DE2508369A1 (en) * 1975-02-26 1976-09-02 Siemens Ag PROCESS FOR MANUFACTURING DISC-SHAPED SILICON BODIES, IN PARTICULAR FOR SOLAR CELLS
JPS604599B2 (en) * 1976-03-17 1985-02-05 株式会社東芝 Method for producing lithium tantalate single crystal
DE2632614A1 (en) * 1976-07-20 1978-01-26 Siemens Ag DEVICE FOR DRAWING A SINGLE CRYSTALLINE BODY FROM A MELT FILM
US4090851A (en) * 1976-10-15 1978-05-23 Rca Corporation Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
JPS56109893A (en) * 1980-01-30 1981-08-31 Kokusai Denshin Denwa Co Ltd <Kdd> Single crystal manufacturing apparatus
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4356152A (en) * 1981-03-13 1982-10-26 Rca Corporation Silicon melting crucible
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
US4442082A (en) * 1982-12-27 1984-04-10 Sri International Process for obtaining silicon from fluosilicic acid
US4597948A (en) * 1982-12-27 1986-07-01 Sri International Apparatus for obtaining silicon from fluosilicic acid
US4605468A (en) * 1984-07-10 1986-08-12 Hughes Aircraft Company Shaped crystal fiber growth method
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
DE10220964B4 (en) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Arrangement for producing crystal rods of defined cross-section and columnar polycrystalline structure by means of crucible-free continuous crystallization
US9572840B2 (en) 2003-06-27 2017-02-21 DePuy Synthes Products, Inc. Regeneration and repair of neural tissue using postpartum-derived cells
ES2642844T3 (en) * 2005-12-16 2017-11-20 DePuy Synthes Products, Inc. Compositions and methods to inhibit an adverse immune response in histocompatibility transplantation that do not match
US9102915B2 (en) * 2006-11-13 2015-08-11 DePuy Synthes Products, Inc. In vitro expansion of postpartum-derived cells using microcarriers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials

Also Published As

Publication number Publication date
NL6506753A (en) 1966-03-23
AT251670B (en) 1967-01-10
BE669955A (en) 1966-01-17
US3393054A (en) 1968-07-16
DE1220832B (en) 1966-07-14
CH424730A (en) 1966-11-30

Similar Documents

Publication Publication Date Title
GB1103906A (en) A nozzle for use in the orientation of the crystallites in a semiconductor crystal in the pulling of the crystal from a melt
GB1213901A (en) Cold-transferring means
GB1165908A (en) Heat Exchange Apparatus
MADEJSKI Effect of friction pressure on the temperature distribution in laminar channel flow
DERSHIN et al. Dependence of the effectiveness in mass-transfer cooling upon temperatures, blowing rate, mach number and reynolds number
GREENE High temperature liquid metal heat transfer for atomic energy commission- momentum transfer, two-phase flow, free and forced convections
GB1208243A (en) Crystalline corundum
BARROW et al. Study of thermal entry region in turbulent two-dimensional channel flow with asymmetric heat transfer
VARGATFIK et al. Thermoconductivity of deuterium oxide and water in the gaseous phase as function of temperature
DENNIS et al. Optical method for measuring the thermal diffusivity of solids at temperatures up to their melting points
BERNARD et al. Integral equation for temperature distributions along a thin wall, showing heat sink effect on kinetic heating of the wall
MENDELSOHN Parametric curves to predict the transient temperature response of a one-dimensional porous- cooled wall exposed instantaneously to a constant heat flux on the coolant exit surface
STEELE THE ELEVATED TEMPERATURE PROPERTIES OF CUPRO NICKEL, 30 PER CENT ALLOY CONTAINING 5. 25 PER CENT IRON
FUSCHILLO et al. Platinum-tellurium system is studied by thermal, microscopic, and x-ray methods
BERT et al. Temperature distribution in circular cooling fins which increase heat-transfer rate
STIBBS Calculation of chandrasekhar h-functions for arguments greater than unity, and coupled h-functions for the theory of radiative transfer in planetary atmospheres
BENNETT et al. THE EFFECT OF FE ON THE CORROSION RATE OF COPPER RICH CU-NI ALLOYS
HORVAY Effect of biot method on heat transfer problem of a slab moving from a low temperature chamber to a high temperature chamber insulated from the first
VILENSKII General laws in the stabilization of the heat- transfer coefficient for the flow of a liquid in a channel(Stabilizing effect of wall and thermal flux temperature variations over channel length on heat transfer coefficient of liquid flow)
PETUKHOV et al. Derivation of integral equations for the temperature distribution and heat transfer coefficients for laminar and turbulent flows in circular tubes
LUNDBERG et al. Effects of asymmetry in the heat flux of wall temperatures in the heat transfer along annular passages
STERN Laminar heat transfer rates in windward plane of yawed blunt cones evaluated for 15 degree half- angle blunt cone at three angles of attack
Cabannes Thermal conductivity of refractory materials at high temperatures(Refractory metallic and nonmetallic materials thermal conductivity above 1500 K, noting unreliable white oxides lattice conductivity results)
FR1512380A (en) Improvements to expansion vessels, in particular for central heating installations
KNUTH Forced-convection heat-transfer rates to surfaces with time-dependent temperatures using equations for the steady-state case