GB1524604A - Manufacture of monocrystalline silicon rods - Google Patents

Manufacture of monocrystalline silicon rods

Info

Publication number
GB1524604A
GB1524604A GB38000/76A GB3800076A GB1524604A GB 1524604 A GB1524604 A GB 1524604A GB 38000/76 A GB38000/76 A GB 38000/76A GB 3800076 A GB3800076 A GB 3800076A GB 1524604 A GB1524604 A GB 1524604A
Authority
GB
United Kingdom
Prior art keywords
rod
tube
pulling
crucible
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38000/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of GB1524604A publication Critical patent/GB1524604A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1524604 Crystal-pulling WACKER-CHEMITRONIC GES FUR ELEKTRONIK-GRUNDSTOFFE mbH 14 Sept 1976 [27 Oct 1975] 38000/76 Heading B1S A monocrystalline silicon rod is pulled vertically from a melt from a crucible in a closed chamber under an inert gas atmosphere, the gas being introduced through a tube surrounding the pulling rod to prevent SiO 2 deposits and being exhausted through an outlet in the wall of the chamber. The tube may be circular and coaxial with the rod and may be of refined steel, quartz, graphite, copper or silver. The separation between tube and rod may be 5-60 mm., and the lower end of the tube may be 80-500 mm. above the melt surface, this distance being kept constant by adjusting the height of the crucible during pulling. The inert gas may be argon, helium or hydrogen. The crucible may be of graphite with a quartz lining. The flow of inert gas may be 10-3000 l/h. During pulling the pressure in the chamber may be 1-100 torr. A dopant e.g. phosphorus may be present in the melt. The rod may be pulled at 1-5 mm/min whilst rotating at 10-100 rev/min.
GB38000/76A 1975-10-27 1976-09-14 Manufacture of monocrystalline silicon rods Expired GB1524604A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2548046A DE2548046C3 (en) 1975-10-27 1975-10-27 Method of pulling single crystal silicon rods

Publications (1)

Publication Number Publication Date
GB1524604A true GB1524604A (en) 1978-09-13

Family

ID=5960201

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38000/76A Expired GB1524604A (en) 1975-10-27 1976-09-14 Manufacture of monocrystalline silicon rods

Country Status (9)

Country Link
US (1) US4097329A (en)
JP (1) JPS5253777A (en)
BE (1) BE847618A (en)
DE (1) DE2548046C3 (en)
DK (1) DK403776A (en)
FR (1) FR2329343A1 (en)
GB (1) GB1524604A (en)
IT (1) IT1066265B (en)
NL (1) NL7609889A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353408A (en) * 1980-04-11 1982-10-12 Olin Corporation Electromagnetic thin strip casting apparatus
US4406731A (en) * 1981-06-09 1983-09-27 Ferrofluidics Corporation Apparatus for and method of sealing shafts in crystal-growing furnace systems
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
DE3577405D1 (en) * 1984-12-28 1990-06-07 Sumitomo Electric Industries METHOD FOR PRODUCING POLYCRYSTALS FROM SEMICONDUCTOR CONNECTIONS AND DEVICE FOR CARRYING OUT THE SAME.
JP2575360B2 (en) * 1986-06-09 1997-01-22 三菱マテリアル株式会社 Method for producing antimony-doped single crystal
US5173270A (en) * 1987-04-09 1992-12-22 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
US5196086A (en) * 1987-04-09 1993-03-23 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
JP2640683B2 (en) * 1988-12-12 1997-08-13 信越半導体株式会社 Single crystal rod pulling device
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JPH0774116B2 (en) * 1989-10-05 1995-08-09 信越半導体株式会社 Method and apparatus for adjusting oxygen concentration in Si single crystal
JPH0777999B2 (en) * 1989-11-24 1995-08-23 信越半導体株式会社 Method for growing antimony-doped single crystal silicon
JP2807609B2 (en) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 Single crystal pulling device
SG49058A1 (en) * 1993-07-21 1998-05-18 Memc Electronic Materials Improved method for growing silicon crystal
JP2686223B2 (en) * 1993-11-30 1997-12-08 住友シチックス株式会社 Single crystal manufacturing equipment
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
US8664093B2 (en) 2012-05-21 2014-03-04 Globalfoundries Inc. Methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom
CN105879656B (en) * 2015-11-24 2020-01-07 上海超硅半导体有限公司 Solid phase treatment technology for tail gas generated in growth of monocrystalline silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL88324C (en) * 1950-06-15
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
US3194637A (en) * 1960-06-22 1965-07-13 Westinghouse Electric Corp Apparatus for the continuous dendritic growth of crystalline material
DE1233828B (en) * 1964-07-03 1967-02-09 Wacker Chemie Gmbh Process for the production, cleaning and / or doping of monocrystalline or polycrystalline semiconductor compounds

Also Published As

Publication number Publication date
JPS546511B2 (en) 1979-03-29
DK403776A (en) 1977-04-28
DE2548046C3 (en) 1982-12-02
BE847618A (en) 1977-04-25
JPS5253777A (en) 1977-04-30
NL7609889A (en) 1977-04-29
US4097329A (en) 1978-06-27
FR2329343A1 (en) 1977-05-27
FR2329343B1 (en) 1981-12-18
DE2548046B2 (en) 1978-11-16
DE2548046A1 (en) 1977-04-28
IT1066265B (en) 1985-03-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee