JPS6465086A - Apparatus and process for producing single crystal rod - Google Patents

Apparatus and process for producing single crystal rod

Info

Publication number
JPS6465086A
JPS6465086A JP22225987A JP22225987A JPS6465086A JP S6465086 A JPS6465086 A JP S6465086A JP 22225987 A JP22225987 A JP 22225987A JP 22225987 A JP22225987 A JP 22225987A JP S6465086 A JPS6465086 A JP S6465086A
Authority
JP
Japan
Prior art keywords
collar
pulling
single crystal
foot end
shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22225987A
Other languages
Japanese (ja)
Other versions
JPH0639351B2 (en
Inventor
Mikio Yoshimiya
Tomohiko Ota
Tadashi Niwayama
Tetsuhiro Oda
Michihiko Mizuno
Masami Nakano
Hiroshi Uchikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP62222259A priority Critical patent/JPH0639351B2/en
Publication of JPS6465086A publication Critical patent/JPS6465086A/en
Publication of JPH0639351B2 publication Critical patent/JPH0639351B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To improve the quality of a single crystal and production efficiency by retarding disturbance in the single crystal by providing in addition to a graphite cylinder a collar to a foot end of a graphite cylinder which surrounds a single crystal rod while the rod is pulled, and adjusting the height and the angle of expansion of the collar. CONSTITUTION:A polycrystalline silicon is filled in a quartz crucible 3, and a pulling chamber is evacuated. Protective gas is introduced into the pulling chamber through an introducing port 21, and the gas in the pulling chamber is replaced with the protective gas atmosphere by discharging the introduced gas from a discharging port 15. Then, the feed crystal is melted to form a melt 7 by feeding electric current to a graphite heater 6. A pulling shaft 11 is dropped thereafter and a seed crystal 10 held at the foot end of the pulling shaft is dipped once in the melt 7. When the seed crystal 10 is pulled while rotating a supporting shaft 4 and the pulling shaft 11, a single crystal rod 12 grows on the foot end of the pulling shaft 11. In order to obtain higher heat shielding effect of a collar 20, it is necessary to adjust an angle alpha of expansion of the collar 20 and to select appropriate height and diameter of the collar. The collar 20 is attached to the foot end of a graphite cylinder, and should be designed to have 5-100mm minimum clearance between the collar 20 and an internal wall or an upper end edge of the quartz crucible 3 during a period from beginning of pulling to the completion of the pulling.
JP62222259A 1987-09-05 1987-09-05 Apparatus and method for manufacturing single crystal ingot Expired - Lifetime JPH0639351B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62222259A JPH0639351B2 (en) 1987-09-05 1987-09-05 Apparatus and method for manufacturing single crystal ingot

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62222259A JPH0639351B2 (en) 1987-09-05 1987-09-05 Apparatus and method for manufacturing single crystal ingot

Publications (2)

Publication Number Publication Date
JPS6465086A true JPS6465086A (en) 1989-03-10
JPH0639351B2 JPH0639351B2 (en) 1994-05-25

Family

ID=16779586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62222259A Expired - Lifetime JPH0639351B2 (en) 1987-09-05 1987-09-05 Apparatus and method for manufacturing single crystal ingot

Country Status (1)

Country Link
JP (1) JPH0639351B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05884A (en) * 1991-06-18 1993-01-08 Komatsu Electron Metals Co Ltd Single crystal producing apparatus
JPH05105578A (en) * 1991-10-17 1993-04-27 Shin Etsu Handotai Co Ltd Single crystal pulling up device
JPH05279172A (en) * 1991-04-20 1993-10-26 Komatsu Denshi Kinzoku Kk Method and apparatus for growing crystal
JPH0656571A (en) * 1992-04-16 1994-03-01 Sumitomo Metal Ind Ltd Method for controlling oxygen concentration of single crystal at pulling up of single crystal and apparatus for growing single crystal used in this method
US5575847A (en) * 1993-11-30 1996-11-19 Sumitomo Sitix Corporation Apparatus for producing single crystals
EP0781866A2 (en) 1995-12-27 1997-07-02 Shin-Etsu Handotai Company Limited An apparatus and a method for growing a single crystal
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
DE112008003609T5 (en) 2008-01-10 2011-02-17 Shin-Etsu Handotai Co., Ltd. Device for producing a single crystal
DE112009001431T5 (en) 2008-07-01 2011-06-16 Shin-Etsu Handotai Co., Ltd. Single-crystal manufacturing apparatus and single-crystal manufacturing method
KR20150060690A (en) 2012-10-03 2015-06-03 신에쯔 한도타이 가부시키가이샤 Silicon single crystal growing apparatus and silicon single crystal growing method
DE112019006883T5 (en) 2019-03-20 2021-11-04 Shin-Etsu Handotai Co., Ltd. Device for the production of single crystals
CN114592235A (en) * 2022-03-04 2022-06-07 徐州康信软件技术有限公司 Single crystal furnace for integrated circuit production
KR20220124698A (en) 2020-01-10 2022-09-14 신에쯔 한도타이 가부시키가이샤 single crystal manufacturing equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461383A (en) * 1987-08-31 1989-03-08 Nippon Steel Corp Method for pulling up single crystal rod and apparatus therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461383A (en) * 1987-08-31 1989-03-08 Nippon Steel Corp Method for pulling up single crystal rod and apparatus therefor

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05279172A (en) * 1991-04-20 1993-10-26 Komatsu Denshi Kinzoku Kk Method and apparatus for growing crystal
JPH05884A (en) * 1991-06-18 1993-01-08 Komatsu Electron Metals Co Ltd Single crystal producing apparatus
JPH05105578A (en) * 1991-10-17 1993-04-27 Shin Etsu Handotai Co Ltd Single crystal pulling up device
JPH0656571A (en) * 1992-04-16 1994-03-01 Sumitomo Metal Ind Ltd Method for controlling oxygen concentration of single crystal at pulling up of single crystal and apparatus for growing single crystal used in this method
US5575847A (en) * 1993-11-30 1996-11-19 Sumitomo Sitix Corporation Apparatus for producing single crystals
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
EP0781866A2 (en) 1995-12-27 1997-07-02 Shin-Etsu Handotai Company Limited An apparatus and a method for growing a single crystal
DE112008003609B4 (en) 2008-01-10 2018-12-20 Shin-Etsu Handotai Co., Ltd. Device for producing a single crystal
DE112008003609T5 (en) 2008-01-10 2011-02-17 Shin-Etsu Handotai Co., Ltd. Device for producing a single crystal
US9217208B2 (en) 2008-01-10 2015-12-22 Shin-Etsu Handotai Co., Ltd. Apparatus for producing single crystal
DE112009001431T5 (en) 2008-07-01 2011-06-16 Shin-Etsu Handotai Co., Ltd. Single-crystal manufacturing apparatus and single-crystal manufacturing method
US8236104B2 (en) 2008-07-01 2012-08-07 Shin-Etsu Handotai Co., Ltd. Single-crystal manufacturing apparatus and single-crystal manufacturing method
DE112009001431B4 (en) 2008-07-01 2019-01-31 Shin-Etsu Handotai Co., Ltd. Single-crystal manufacturing apparatus and single-crystal manufacturing method
KR20150060690A (en) 2012-10-03 2015-06-03 신에쯔 한도타이 가부시키가이샤 Silicon single crystal growing apparatus and silicon single crystal growing method
US9783912B2 (en) 2012-10-03 2017-10-10 Shin-Etsu Handotai Co., Ltd. Silicon single crystal growing apparatus and method for growing silicon single crystal
DE112013004069B4 (en) 2012-10-03 2023-02-02 Shin-Etsu Handotai Co., Ltd. Apparatus for growing a silicon single crystal and method for growing a silicon single crystal
DE112019006883T5 (en) 2019-03-20 2021-11-04 Shin-Etsu Handotai Co., Ltd. Device for the production of single crystals
US11821104B2 (en) 2019-03-20 2023-11-21 Shin-Etsu Handotai Co., Ltd. Apparatus for manufacturing single crystal
KR20220124698A (en) 2020-01-10 2022-09-14 신에쯔 한도타이 가부시키가이샤 single crystal manufacturing equipment
DE112020006483T5 (en) 2020-01-10 2022-11-17 Shin-Etsu Handotai Co., Ltd. Apparatus for making monocrystals
CN114592235A (en) * 2022-03-04 2022-06-07 徐州康信软件技术有限公司 Single crystal furnace for integrated circuit production

Also Published As

Publication number Publication date
JPH0639351B2 (en) 1994-05-25

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